FODM2701BVR2V [FAIRCHILD]
Transistor Output Optocoupler, 1-Element;型号: | FODM2701BVR2V |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Transistor Output Optocoupler, 1-Element |
文件: | 总10页 (文件大小:643K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
February 2007
FODM121 Series, FODM124, FODM2701 Series, FODM2705
4-Pin Full Pitch Mini-Flat Package Transistor Output
Optocouplers
Features
Applications
■ >5mm creepage/clearance
■ Compact 4-pin surface mount package
(2.4mm maximum standoff height)
■ Current Transfer Ratio in selected groups
DC Input:
■ Digital logic inputs
■ Microprocessor inputs
■ Power supply monitor
■ Twisted pair line receiver
■ Telephone line receiver
FODM121: 50–600%
FODM2701: 50–300%
FODM121A: 100–300% FODM2701A: 150–300%
Description
FODM121B: 50–150%
FODM2701B: 80–160%
FODM121C: 100–200% FODM124: 100% MIN
FODM121D: 50–100%
FODM121E: 150–300%
FODM121F: 100–600%
FODM121G: 200–400%
The FODM124, FODM121, and FODM2701 series con-
sists of a gallium arsenide infrared emitting diode driving
a phototransistor in a compact 4-pin mini-flat package.
The lead pitch is 2.54 mm. The FODM2705 series con-
sists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
AC Input:
FODM2705: 50–300%
■ Available in tape and reel quantities of 500 and 2500
■ Applicable to Infrared Ray reflow
(260°C max, 10 seconds)
■ C-UL, UL and VDE* certifications
*option ‘V’ required
Package Dimensions
4.40 0.20
1
4
COLLECTOR
ANODE
CATHODE 2
3 EMITTER
2.54
Equivalent Circuit
FODM121, FODM124, FODM2701
3.85 0.20
5.30 0.30
2.00 0.20
1
4
COLLECTOR
ANODE
0.20 0.05
CATHODE 2
3 EMITTER
Equivalent Circuit
FODM2705
0.10 0.10
+0.2
–0.7
0.40 0.10
7.00
Note:
All dimensions are in millimeters.
©2006 Fairchild Semiconductor Corporation
FODMX Rev. 1.0.7
1
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Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Value
Units
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
-40 to +125
-40 to +110
°C
°C
STG
T
OPR
EMITTER
I
Continuous Forward Current
Peak Forward Current (1µs pulse, 300 pps.)
Reverse Input Voltage
50
1
mA
A
F (avg)
I
F (pk)
V
P
6
V
R
D
Power Dissipation
70
0.65
mW
mW/°C
Derate linearly (above 25°C)
DETECTOR
Continuous Collector Current
Power Dissipation
80
150
2.0
40
80
7
mA
mW
P
D
Derate linearly (above 25°C)
mW/°C
V
V
Collector-Emitter Voltage
Emitter-Collector Voltage
FODM2701 Series, FODM2705
FODM121 Series, FODM124
CEO
ECO
V
V
Electrical Characteristics (T = 25°C)
A
Individual Component Characteristics
Symbol Parameter
Test Conditions
Device
Min. Typ.* Max.
Unit
EMITTER
V
Forward Voltage
Reverse Current
I = 10mA
FODM121 Series
FODM124
1.0
1.3
1.4
V
F
F
I = 5mA
FODM2701 Series
FODM2705
F
I = ±5mA
F
I
V = 5V
FODM2701 Series
FODM121 Series
FODM124
5
µA
V
R
R
DETECTOR
BV
Breakdown Voltage
Collector to Emitter
I = 1mA, I = 0
FODM121 Series
FODM124
80
40
7
CEO
C
F
FODM2701 Series
FODM2705
BV
Emitter to Collector
I = 100µA, I = 0
All
All
–
V
ECO
E
F
I
Collector Dark
Current
V
= 40V, I = 0
100
nA
CEO
CE
F
C
Capacitance
V
= 0V, f = 1MHz
All
10
pF
CE
CE
2
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FODMX Rev. 1.0.7
Transfer Characteristics (T = 25°C)
A
Symbol
Characteristic
Test Conditions
Device
Min. Typ.** Max. Unit
CTR
DC Current Transfer Ratio I = ±5mA, V = 5V
FODM2705
FODM2701
50
50
300
300
300
160
600
300
150
200
100
300
600
400
%
F
CE
I = 5mA, V = 5V
F
CE
FODM2701A 150
FODM2701B
FODM121
FODM121A
FODM121B
FODM121C
FODM121D
FODM121E
FODM121F
FODM121G
FODM121F
FODM124
FODM124
FODM2705
FODM2705
FODM2701
FODM2701A
FODM2701B
FODM121
FODM121A
FODM121B
FODM121C
FODM121D
FODM121E
FODM121F
FODM121G
FODM121F
FODM124
All
80
50
I = 5mA, V = 5V
F
CE
100
50
100
50
150
100
200
30
I = 1mA, V = 0.4V
F
CE
I = 1mA, V = 0.5V
100
50
1200
F
CE
I = 0.5mA, V = 1.5V
F
CE
CTR Symmetry
I = ±5mA, V = 5V
0.3
3.0
0.3
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
F
CE
V
Saturation Voltage
I = ±10mA, I = 2mA
V
CE (SAT)
F
C
I = 10mA, I = 2mA
F
C
I = 8mA, I = 2.4mA
F
C
I = 1mA, I = 0.2mA
F
C
I = 1mA, I = 0.5mA
F
C
t
Rise Time (Non-Saturated) I = 2mA, V = 5V,
3
3
µs
µs
r
C
CE
R = 100Ω
L
t
Fall Time (Non-Saturated) I = 2mA, V = 5V,
All
f
C
CE
R = 100Ω
L
Isolation Characteristics
Characteristic
Test Conditions Symbol Device Min. Typ.* Max.
Unit
(1)
Steady State Isolation Voltage
1 Minute
V
All
3750
VRMS
ISO
*All typicals at T = 25°C
A
Note:
1. Steady state isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
ISO
common, and pins 3 and 4 are common.
3
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FODMX Rev. 1.0.7
Typical Performance Curves
Fig. 2 Collector-Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
Fig. 1 Forward Current vs. Forward Voltage
100
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
= 110oC
T
A
70oC
I
= 8mA
25oC
0oC
F
I
= 2.4mA
C
-40oC
10
I
= 10mA
= 2mA
F
I
C
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-40
-20
0
20
40
60
80
100
120
V
- Forward Voltage (V)
T
- Ambient Temperature (°C)
F
A
Fig. 3 Current Transfer Ratio vs. Forward Current
(FODM121/2701/2705)
Fig. 4 Collector Current vs. Forward Current
(FODM121/2701/2705)
100
10
1
T
= 25oC
A
T
= 25oC
A
V
= 10V
CE
V
= 10V
V
= 5V
CE
CE
V
= 5V
CE
100
0.1
10
0.1
1
10
100
0.1
1
10
100
I
- Forward Current (mA)
I
- Forward Current (mA)
F
F
Fig. 6 Collector Current vs. Collector-Emitter
Voltage (FODM121/2701/2705)
Fig. 5 Collector Current vs. Ambient Temperature
(FODM121/2701/2705)
100
T
= 25oC
A
I
= 25mA
40
30
20
10
0
F
I
= 50mA
F
I
= 40mA
F
10
1
I
= 10mA
F
I
= 30mA
F
I
= 5mA
F
I
= 20mA
F
I
= 1mA
F
I
= 10mA
F
I
= 0.5mA
F
0.1
I
= 5mA
= 1mA
F
V
= 5V
CE
I
F
0.01
0
2
4
6
8
10
-40
-20
0
20
40
60
80
100
120
V
- Collector-Emitter Voltage (V)
T
- Ambient Temperature (°C)
CE
A
4
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FODMX Rev. 1.0.7
Fig 7. Collector Dark Current vs. Ambient
Temperature (FODM121/2701/2705)
Fig. 8 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM121/2701/2705)
10000
1000
100
10
160
140
120
100
80
o
I
= 5mA
= 5V
Normalized to T = 25 C
A
F
V
CE
V
= 40V
CE
60
1
40
0.1
-40
20
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
T
- Ambient Temperature (°C)
T - Ambient Temperature (°C)
A
A
Fig. 9 Switching Time vs. Load Resistance
(FODM121/2701/2705)
Fig. 10 Collector-Emitter Saturation Voltage
vs. Ambient Temperature (FODM124)
1000
100
10
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
I
= 1mA
I
= 5mA
V
= 5V
I = 16mA
F
F
F
CC
I
= 0.5mA
o
C
T
= 25 C
A
t
OFF
t
S
t
ON
1
-40
-20
0
20
40
60
80
100
120
1
10
100
T
- Ambient Temperature (°C)
R - Load Resistance (kΩ)
A
L
Fig. 11 Current Transfer Ratio vs.
Forward Current (FODM124)
Fig 12. Collector Current vs. Forward Current
(FODM124)
T
= 25°C
= 0.5V
A
T
= 25°C
= 0.5V
A
V
CE
V
CE
10
1
100
0.1
0.01
10
0.1
1
10
0.1
1
10
I
- Forward Current (mA)
I - Forward Current (mA)
F
F
5
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FODMX Rev. 1.0.7
Fig. 14 Collector Current vs. Collector-Emitter Voltage
(FODM124)
Fig 13. Collector Current vs. Ambient Temperature
(FODM124)
10
o
T
= 25 C
V
= 0.5V
A
CE
I
= 10mA
= 5mA
8
6
4
2
0
F
I
= 10mA
I
= 5mA
F
F
10
I
F
I
I
= 2mA
= 1mA
F
F
1
I
= 2mA
= 1mA
F
I
= 0.5mA
F
I
F
I
= 0.5mA
F
0.1
-40
0.0
0.2
0.4
0.6
0.8
1.0
-20
0
20
40
60
80
100
120
V
- Collector-Emitter Voltage (V)
T
- Ambient Temperature (°C)
CE
A
Fig. 16 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM124)
Fig. 15 Collector Dark Current vs. Ambient
Temperature (FODM124)
160
140
120
100
80
I
= 1mA,
= 0.5V
CE
Normalized to T = 25°C
A
F
V
= 40V
CE
V
10000
1000
100
10
60
1
40
20
0.1
-40
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
T
- Ambient Temperature (°C)
T
- Ambient Temperature (°C)
A
A
Fig. 17 Switching Time vs. Load Resistance (FODM124)
V
= 5V
= 1mA
= 25°C
CC
I
F
T
A
1000
100
10
t
OFF
t
S
t
ON
1
1
10
100
R - Load Resistance (kΩ)
L
6
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FODMX Rev. 1.0.7
Ordering Information
Option
V
Description
VDE Approved
R1
Tape and Reel (500 units)
R2
Tape and Reel (2500 units)
R1V
R2V
Tape and Reel (500 units) and VDE Approved
Tape and Reel (2500 units) and VDE Approved
Marking Information
1
2
121
6
V X YY R
3
4
5
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE option –
See order entry table)
4
5
6
One digit year code
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
7
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FODMX Rev. 1.0.7
P
2
D0
P
0
t
K0
E
A0
W
W
1
B0
F
d
D1
P
2.54 Pitch
Description
Symbol
Dimensions (mm)
12.00 0.4
0.35 0.02
4.00 0.20
1.55 0.20
1.75 0.20
5.50 0.20
2.00 0.20
8.00 0.20
4.75 0.20
7.30 0.20
2.30 0.20
1.55 0.20
9.20
Tape Width
W
t
Tape Thickness
Sprocket Hole Pitch
Sprocket Hole Dia.
P
0
D0
E
Sprocket Hole Location
Pocket Location
F
P2
P
Pocket Pitch
Pocket Dimension
A0
B0
K0
D1
W1
d
Pocket Hole Dia.
Cover Tape Width
Cover Tape Thickness
0.065 0.02
Max. Component Rotation or Tilt
Devices Per Reel
20° max
500
R1
R2
R1
R2
2500
Reel Diameter
178 mm (7")
330 mm (13")
8
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FODMX Rev. 1.0.7
Footprint Drawing for PCB Layout
0.80
1.00
6.50
2.54
Note:
All dimensions are in mm.
Recommended Infrared Reflow Soldering Profile
• Peak reflow temperature: 260°C (package surface temperature)
• Time of temperature higher than 245°C: 40 seconds or less
• Number of reflows: 3
10s
300
250
200
150
100
50
260°C
245°C
40s
0
0
50
100
150
200
250
300
Time (s)
9
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FODMX Rev. 1.0.7
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OPTOPLANAR™
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ImpliedDisconnect™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
10
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FODMX Rev. 1.0.7
相关型号:
FODM2701R1V
Transistor Output Optocoupler, 1-Element, 3750V Isolation, MINI-FLAT PACKAGE-4
FAIRCHILD
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