FQD12P10TM [FAIRCHILD]

100V P-Channel MOSFET; 100V P沟道MOSFET

FQD12P10TM


型号：	FQD12P10TM
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	100V P-Channel MOSFET 100V P沟道MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总9页 (文件大小：672K)
下载：	下载PDF数据表文档文件

FQD12P10TM_AS004

POWER, FET

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0 FAIRCHILD

FQD12P10TM_F085

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3/2

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0 FAIRCHILD

FQD13N06

60V N-Channel MOSFET

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153 FAIRCHILD

FQD13N06_09

60V N-Channel MOSFET

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26 FAIRCHILD

FQD13N06_NL

暂无描述

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0 FAIRCHILD

FQD13N06L

60V LOGIC N-Channel MOSFET

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164 FAIRCHILD

FQD13N06LTF

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD13N06LTF

11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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0 ROCHESTER

FQD13N06LTF

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD13N06LTF_NL

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

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0 FAIRCHILD

FQD13N06LTF_NL

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

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0 FAIRCHILD

FQD13N06LTM

11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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0 ROCHESTER

FQD13N06LTM

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD13N06LTM_NL

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

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0 FAIRCHILD

FQD13N06TF

Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

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