FQD18N20V2_13 [FAIRCHILD]
N-Channel QFET MOSFET; N沟道MOSFET QFET
| 型号： | FQD18N20V2_13 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel QFET MOSFET |
| 文件： | 总9页 (文件大小：737K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FQD18N20V2 / FQU18N20V2
N-Channel QFET® MOSFET
200 V, 15 A, 140 mΩ
Description
Features
15 A, 200 V, R
•
ID = 7.5 A
= 140 mΩ @ V = 10 V,
GS
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
DS(on)
•
•
•
Low Gate Charge (Typ. 20 nC)
Low Crss (Typ. 25 pF)
100% Avalanche Tested
D
!
D
"
G
G
! "
D
"
"
G !
S
S
!
S
I-PAK
D-PAK
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQD18N20V2 / FQU18N20V2
Unit
V
V
I
Drain-Source Voltage
200
15
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
9.75
60
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
340
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
15
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.3
mJ
V/ns
W
AR
dv/dt
6.5
Power Dissipation (T = 25°C) *
2.5
P
A
D
Power Dissipation (T = 25°C)
83
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.67
-55 to +150
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
FQD18N20V2 / FQU18N20V2
Unit
R
R
R
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
°C/W
°C/W
°C/W
1.5
50
θJC
θJA
θJA
110
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
200
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.25
V/°C
D
/
∆T
J
I
V
V
V
V
= 200 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 160 V, T = 125°C
10
DS
GS
GS
C
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
I
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.0
--
--
0.12
11
5.0
0.14
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 7.5 A
D
g
= 40 V, I = 7.5 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
830
200
25
1080
260
33
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
V
= 160 V, V = 0 V,
DS
GS
C
C
Output Capacitance
--
--
70
--
--
pF
pF
oss
oss
f = 1.0 MHz
eff.
V
= 0V to 160 V, V = 0 V
GS
Effective Output Capacitance
135
DS
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
16
133
38
40
275
85
135
26
--
ns
ns
d(on)
V
= 100 V, I = 18 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
62
ns
Q
Q
Q
20
nC
nC
nC
g
V
V
= 160 V, I = 18 A,
DS
D
5.6
10
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
15
60
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 15 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 18 A,
158
1.0
ns
µC
rr
GS
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, I = 18A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 18A, di/dt ≤ 200A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
10-1
1
℃
150
10
Bottom : 5.5 V
℃
25
℃
-55
0
10
※
Notes :
μ
1. 250 s Pulse Test
※
Notes :
℃
2. TC = 25
1. V = 40V
DS μ
2. 250 s Pulse Test
10-1
100
101
-1
10
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0.0
VGS = 10V
VGS = 20V
1
10
0
10
150℃
25℃
※
Notes :
※
℃
Note : TJ = 25
1. V = 0V
GS μ
2. 250 s Pulse Test
-1
0
10
20
30
40
50
60
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
V
SD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
2500
2000
1500
1000
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 40V
VDS = 100V
Crss = Cgd
VDS = 160V
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
6
Ciss
Coss
4
Crss
2
※
Note : ID = 18A
20
0
10-1
100
101
0
0
5
10
15
25
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
Notes :
0.9
1. VGS = 0 V
※
Notes :
μ
2. ID = 250
A
1. VGS = 10 V
2. ID = 7.5 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
100 us
1 ms
101
100
10-1
10 ms
DC
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
0
25
100
101
102
50
75
100
125
150
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 9. Maximum Safe Operating Area
0
1 0
D = 0 . 5
0 . 2
※
N
o t e s :
0 . 1
℃
1 .
Z
D
T
C ( t)
=
1 . 5
/W
M a x .
θ
J
- 1
2 .
3 .
u t y F a c to r ,
D
= t1 /t2
1 0
0 . 0 5
-
T
=
P
*
Z
C ( t)
J
θ
J
M
C
D
M
0 . 0 2
0 . 0 1
PDM
s in g le p u ls e
t1
- 2
1 0
t2
- 5
- 1
1 0
1 0 - 4
1 0 - 3
1 0 - 2
1 0
1 0 0
1 0 1
t1
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Gate Charge Test Circuit & Waveform
VGS
Same Type
50Kꢀ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD18N20V2 / FQU18N20V2 Rev. C0
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