FQD2N100TM [FAIRCHILD]
1000V N-Channel MOSFET; 1000V N沟道MOSFET![FQD2N100TM](http://pdffile.icpdf.com/pdf1/p00185/img/icpdf/FQD2N1_1046037_icpdf.jpg)
型号: | FQD2N100TM |
厂家: | ![]() |
描述: | 1000V N-Channel MOSFET |
文件: | 总9页 (文件大小:736K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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January 2009
QFET®
FQD2N100/FQU2N100
1000V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp starter and ballast.
•
•
•
•
•
•
1.6A, 1000V, R
= 9Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 12 nC)
Low Crss ( typical 5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
•
RoHS Compliant
D
!
D
●
◀
▲
●
●
G!
I-PAK
FQU Series
D-PAK
FQD Series
G
S
G D S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQD2N100/FQU2N100
Units
V
V
I
Drain-Source Voltage
1000
1.6
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
1.0
A
C
I
(Note 1)
Drain Current
- Pulsed
6.4
A
DM
V
E
I
Gate-Source Voltage
± 30
160
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
1.6
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.0
mJ
V/ns
W
AR
dv/dt
5.5
Power Dissipation (T = 25°C) *
2.5
P
A
D
Power Dissipation (T = 25°C)
50
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.4
W/°C
°C
T , T
-55 to +150
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
2.5
50
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
--
110
* When mounted on the minimum pad size recommended (PCB Mount)
Rev. A2, January 2009
©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
1000
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.976
V/°C
D
/
∆T
J
I
V
V
V
V
= 1000 V, V = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 800 V, T = 125°C
100
100
-100
DS
GS
GS
C
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
DS
I
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.0
--
--
5.0
9
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 0.8 A
7.1
1.9
D
g
= 50 V, I = 0.8 A
(Note 4)
Forward Transconductance
--
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
400
40
5
520
52
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
6.5
Switching Characteristics
t
t
t
t
V
= 500 V, I = 2.0 A,
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
13
30
25
35
12
2.5
6.5
35
70
60
80
15.5
--
ns
ns
d(on)
DD D
R
= 25 Ω
G
r
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 800 V, I = 2.0 A,
DS
D
gs
gd
= 10 V
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1.5
6.0
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 1.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 2.0 A,
520
2.3
ns
µC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, I = 1.6A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 2.0A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
Bottom: 5.5 V
150℃
25℃
100
-1
10
-55℃
※
Notes :
1. VDS = 50V
※
Notes :
1. 250µs Pulse Test
2. 250µs Pulse Test
℃
2. TC = 25
-1
10
-2
10
-1
100
101
2
4
6
8
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
15
10
5
VGS = 10V
100
VGS = 20V
150℃
25℃
※
Notes:
1. VGS = 0V
2. 250µs Pulse Test
※
℃
Note : T = 25
J
0
-1
10
0
1
2
3
4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
V
SD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
700
600
500
400
300
200
100
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 200V
Crss = C
gd
VDS = 500V
C
iss
VDS = 1000V
C
oss
6
※
Notes :
4
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = 1.6 A
12
0
0
2
4
6
8
10
14
-1
1
10
10
100
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※
Notes:
1. V = 0 V
2. IDG=S 250µA
※
Notes :
1. VGS = 10 V
2. ID = 0.8 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
Operation in This Area
is Limited by R DS(on)
101
100
1.5
1.2
0.9
0.6
0.3
0.0
10 µs
100 µs
1 ms
10 ms
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
100
101
102
103
25
50
75
100
125
150
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1/t2
:
℃
/W M a x.
=
2 .5
0 .1
0 .0 5
3 . T J M
- T C = P D M * Z θ J C(t)
1 0 -1
0 .0 2
0 .0 1
PDM
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
ID
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
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intended to be an exhaustive list of all such trademarks.
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TINYOPTO™
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μSerDes™
®
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
EZSWITCH™ *
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®
SPM
MillerDrive™
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®
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I37
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
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