FQD3P50_09 [FAIRCHILD]

500V P-Channel MOSFET; 500V P沟道MOSFET

FQD3P50_09


型号：	FQD3P50_09
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	500V P-Channel MOSFET 500V P沟道MOSFET
文件：	总9页 (文件大小：766K)
下载：	下载PDF数据表文档文件

FQD3P50TF

2.1A, 500V, 4.9ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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3 ROCHESTER

FQD3P50TF

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD3P50TM

500V P-Channel MOSFET

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33 FAIRCHILD

FQD3P50TM

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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3 FAIRCHILD

FQD3P50TM_F085

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

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0 FAIRCHILD

FQD45N03L

N-Channel Logic Level PWM Optimized Power MOSFET

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47 FAIRCHILD

FQD45N03L

N-Channel Logic Level PWM Optimized Power MOSFET

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23 FAIRCHILD

FQD4N20

200V N-Channel MOSFET

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88 FAIRCHILD

FQD4N20_09

200V N-Channel MOSFET

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13 FAIRCHILD

FQD4N20L

200V LOGIC N-Channel MOSFET

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49 FAIRCHILD

FQD4N20LTF

Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD4N20LTM

Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD4N20TF

Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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1 FAIRCHILD

FQD4N20TF

3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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0 ROCHESTER

FQD4N20TM

Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

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