FQI10N60C [FAIRCHILD]

600V N-Channel MOSFET; 600V N沟道MOSFET

FQI10N60C


型号：	FQI10N60C
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	600V N-Channel MOSFET 600V N沟道MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总9页 (文件大小：615K)
下载：	下载PDF数据表文档文件

FQI10N60CTU

Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, I2PAK-3

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0 FAIRCHILD

FQI10N60CTU

9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3

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0 ROCHESTER

FQI11N40

400V N-Channel MOSFET

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29 FAIRCHILD

FQI11N40C

400V N-Channel MOSFET

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24 FAIRCHILD

FQI11N40TU

11.4A, 400V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

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0 ROCHESTER

FQI11P06

60V P-Channel MOSFET

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15 FAIRCHILD

FQI11P06

60V P-Channel MOSFET

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20 FAIRCHILD

FQI11P06TU

11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

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0 ROCHESTER

FQI11P06TU

Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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1 FAIRCHILD

FQI12N20

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 11.6A I(D) | TO-262AA

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17 ETC

FQI12N20L

200V LOGIC N-Channel MOSFET

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20 FAIRCHILD

FQI12N20TU

Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI12N50

500V N-Channel MOSFET

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20 FAIRCHILD

FQI12N60

600V N-Channel MOSFET

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30 FAIRCHILD

FQI12N60C

600V N-Channel MOSFET

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59 FAIRCHILD

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