FQI22P10 [FAIRCHILD]

100V P-Channel MOSFET; 100V P沟道MOSFET
FQI22P10
型号: FQI22P10
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

100V P-Channel MOSFET
100V P沟道MOSFET

文件: 总9页 (文件大小:637K)
下载:  下载PDF数据表文档文件

FQI22P10TU

Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI24N08

80V N-Channel MOSFET

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28 FAIRCHILD

FQI26N03L

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 26A I(D) | TO-263

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12 ETC

FQI27N25

250V N-Channel MOSFET

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29 FAIRCHILD

FQI27N25TU

250V N-Channel MOSFET

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22 FAIRCHILD

FQI27N25TU

25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

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0 ROCHESTER

FQI27N25TU_F085

Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, I2PAK-3

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0 FAIRCHILD

FQI27P06

60V P-Channel MOSFET

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29 FAIRCHILD

FQI27P06TU

Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI28N15

150V N-Channel MOSFET

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27 FAIRCHILD

FQI28N15TU

Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI2N30

300V N-Channel MOSFET

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16 FAIRCHILD

FQI2N30TU

2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

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0 ROCHESTER

FQI2N50

500V N-Channel MOSFET

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25 FAIRCHILD

FQI2N50TU

Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD