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FQI65N06 [FAIRCHILD]

Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3;

FQI65N06


元器件型号：	FQI65N06
生产厂家：	FAIRCHILD SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 开关脉冲晶体管
PDF文件：	总9页 (文件大小：666K)
下载文档：	下载PDF数据表文档文件
型号参数：FQI65N06参数

FQI65N06TU

Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI6N15

150V N-Channel MOSFET

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19 FAIRCHILD

FQI6N15TU

Power Field-Effect Transistor, 6.4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI6N25

250V N-Channel MOSFET

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16 FAIRCHILD

FQI6N40

400V N-Channel MOSFET

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18 FAIRCHILD

FQI6N40C

400V N-Channel MOSFET

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18 FAIRCHILD

FQI6N40C

400V N-Channel MOSFET

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33 FAIRCHILD

FQI6N40TU

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI6N45

450V N-Channel MOSFET

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27 FAIRCHILD

FQI6N45TU

Power Field-Effect Transistor, 6.2A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI6N50

500V N-Channel MOSFET

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23 FAIRCHILD

FQI6N50TU

Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

FQI6N60

600V N-Channel MOSFET

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24 FAIRCHILD

FQI6N60C

600V N-Channel MOSFET

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25 FAIRCHILD

FQI6N60TU

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

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