FQI7N60TU [FAIRCHILD]
N-Channel QFET® MOSFET 800 V, 3.9 A, 3.6 Ω; N沟道MOSFET QFET® 800 V， 3.9 A， 3.6 I©
| 型号： | FQI7N60TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel QFET® MOSFET 800 V, 3.9 A, 3.6 Ω |
| 文件： | 总9页 (文件大小：771K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2013
FQB7N60 / FQI7N60
N-Channel QFET® MOSFET
800 V, 3.9 A, 3.6 Ω
Features
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
3.9 A, 800 V, RDS(on) = 3.6 Ω (Max.) @VGS = 10 V,
ID = 1.95 A
•
•
•
Low Gate Charge (Typ. 19 nC)
Low Crss (Typ. 8.6 pF)
100% Avalanche Tested
D
D
G
G
G
I2-PAK
D
S
D2-PAK
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
Symbol
Parameter
Unit
V
I
Drain-Source Voltage
600
7.4
V
A
DSS
- Continuous (T = 25°C)
Drain Current
D
C
- Continuous (T = 100°C)
4.7
A
C
I
(Note 1)
Drain Current
- Pulsed
29.6
±ꢀ30
580
A
DM
V
E
I
Gate-Source Voltage
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
7.4
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
14.2
4.5
mJ
V/ns
W
AR
dv/dt
Power Dissipation (T = 25°C) *
3.13
142
P
A
D
Power Dissipation (T = 25°C)
W
C
- Derate above 25°C
1.14
-55 to +150
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8ꢀ from Case for 5 Seconds
J
STG
T
300
°C
L
Thermal Characteristics
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
Symbol
Parameter
Unit
RJC
RJA
Thermal Resistance, Junction to Case, Max.
0.88
62.5
40
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
oC/W
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size
Tape Width
Quantity
FQB7N60TM
FQB7N60
D2-PAK
330 mm
24 mm
800 units
Tape and Reel
FQB7N60TM_WS
FQB7N60S
FQI7N60
D2-PAK
I2-PAK
330 mm
24 mm
800 units
50 units
Tape and Reel
Tube
FQI7N60TU
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BV
V
I
= 0 V, I = 250 µA
Drain-Source Breakdown Voltage
600
--
--
--
--
V
DSS
GS
D
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
= 250 µA, Referenced to 25°C
0.67
V/°C
D
/
I
∆T
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
DS
GS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.0
--
--
5.0
1.0
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
=10V,I =3.7A
0.8
6.4
D
g
= 50 V, I = 3.7 A
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1100
135
16
1430
175
21
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
30
80
65
60
29
7
70
170
140
130
38
ns
ns
d(on)
V
= 300 V, I = 7.4 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 480 V, I = 7.4 A,
DS
D
--
= 10 V
gs
gd
GS
14.5
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
7.4
29.6
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 7.4 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 7.4 A,
320
2.4
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
ꢀꢁꢂꢃꢄꢅ
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 19.5 mH, IAS = 7.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 7.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
2
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
V
Top : 15.0GVS
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
101
101
6.0 V
Bottom: 5.5 V
100
100
ꢀ
150
ꢀ
25
ꢀ
Notes :
ꢀ
Notes :
ꢁ
1. VDS = 50V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TC = 25
ꢀ
-55
ꢁ
ꢂ
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
101
VGS = 10V
VGS = 20V
100
ꢀ
Notes :
ꢀ
ꢀ
25
150
1. VGS = 0V
2. 250 s Pulse Test
ꢀ
ꢁ
Note : TJ = 25
ꢁ
-1
0
5
10
15
20
25
10
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2000
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 120V
VDS = 300V
VDS = 480V
Crss = C
gd
1600
1200
800
400
0
C
iss
C
oss
6
4
ꢀ
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
ꢀ
Note : ID = 7.4A
0
0
5
10
15
20
25
30
35
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
3
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅꢀꢀꢀꢀꢁꢂꢃꢄꢅꢆꢄꢇꢈꢉꢊ
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ꢀ
Notes :
0.9
1. VGS = 0 V
2. ID = 250
ꢀ
Notes :
ꢁ
A
1. V = 10 V
2. IDG=S 3.7 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
8
102
101
100
10-1
Operation in This Area
is Limited by RDS(on)
6
4
2
0
100
s
µ
1 ms
10 ms
DC
ꢀ
Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
ꢀ
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 . 5
0 .2
ꢀ
N o t e s
:
ꢁ
1 . C(t )
Z
=
0 .8 8
/W M a x .
ꢀ
J
2 . D u t y F a c t o r , D = t 1 /t 2
1 0 -1
0 .1
3 . T J
-
T C
=
P D
*
Z
C(t )
ꢀ
M
M
J
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g l e p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t 1
, R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
6
Mechanical Dimensions
2
Figure 16. TO263 (D PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
7
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
Mechanical Dimensions
2
Figure 17. TO262 (I PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003
8
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
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intended to be an exhaustive list of all such trademarks.
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Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
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QS™
Quiet Series™
RapidConfigure™
™
®
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®
®
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Gmax™
GTO™
TinyCalc™
®
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TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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MICROCOUPLER™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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®
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®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
9
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©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
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