FQP10N20L [FAIRCHILD]

200V LOGIC N-Channel MOSFET; LOGIC 200V N沟道MOSFET


型号：	FQP10N20L
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	200V LOGIC N-Channel MOSFET LOGIC 200V N沟道MOSFET
文件：	总8页 (文件大小：566K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

December 2000

QFET

FQP10N20L

200V LOGIC N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

10A, 200V, R

= 0.36Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 13 nC)

Low Crss ( typical 14 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for high efficiency switching DC/DC converters,

switch mode power supplies, and motor control.

Low level gate drive requirement allowing direct

operation from logic drivers

! "

TO-220

FQP Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP10N20L

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

6.3

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 20

180

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.7

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.7

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.44

Units

°C/W

θJC

θCS

θJA

0.5

62.5

Rev. A2, December 2000

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

200

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

= 250 µA, Referenced to 25°C

0.18

V/°C

∆T

= 200 V, V = 0 V

µA

DSS

Zero Gate Voltage Drain Current

= 160 V, T = 125°C

= 20 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

GSSF

= -20 V, V = 0 V

GSSR

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

1.0

2.0

Ω

GS(th)

= 10 V, I = 5.0 A

Static Drain-Source

On-Resistance

0.29

0.3

0.36

0.38

DS(on)

= 5 V, I = 5.0 A

(Note 4)

= 30 V, I = 5.0 A

Forward Transconductance

10.7

Dynamic Characteristics

Input Capacitance

640

830

125

iss

= 25 V, V = 0 V,

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

150

310

110

200

d(on)

= 100 V, I = 10 A,

= 25 Ω

(Note 4, 5)

d(off)

= 160 V, I = 10 A,

2.4

6.1

= 5 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

1.5

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = 10 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

(Note 4)

= 0 V, I = 10 A,

120

0.57

µC

dI / dt = 100 A/µs

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.7mH, I = 10A, V = 50V, R = 25 Ω, Starting T = 25°C

3. I ≤ 10A, di/dt ≤ 300A/µs, V ≤ BV

Starting T = 25°C

DSS,

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. A2, December 2000

Typical Characteristics

V_GS

Top :

10 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

10¹

Bottom : 3.0 V

℃

150

10⁰

℃

※

Notes :

※

Notes :

2. T_C= 25

1. 250 s Pulse Test

℃

-55

1. V_DS= 30V

℃

2. 250 s Pulse Test

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.6

1.2

0.8

0.4

0.0

V_GS= 5V

10¹

V_GS= 10V

10⁰

※

Notes :

℃

150

1. V_GS= 0V

※

℃

Note : T = 25

2. 250 s Pulse Test

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I_D, Drain Current [A]

V_SD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1500

1200

900

600

300

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C

V_DS= 40V

V_DS= 100V

iss

V_DS= 160V

C_oss

※

Notes :

1. V = 0 V

2. f = 1 MHz

rss

※

Note : I_D= 10 A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A2, December 2000

Typical Characteristics (Continued)

1.2

1.1

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

※Notes :

1. V_GS= 0 V

2. I_D= 250 μA

0.9

0.8

※

Notes :

1. V_GS= 10 V

2. I_D= 5 A

-100

-50

100

150

200

-100

-50

100

150

200

T_J, Junction Temperature [^oC]

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Operation in This Area

is Limited by R_DS(on)

10²

10¹

10⁰

10^-1

100 µs

1 ms

10 ms

※

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

10⁰

10¹

10²

100

125

150

℃

T_C, Case Temperature [

]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

1 0 ⁰

D = 0 . 5

0 . 2

0 . 1

※

N o t e s

℃

/W M a x .

1 . Z _θ_C(t )

1 .4 4

2 . D u t y F a c t o r , D = t ₁/t ₂

3 . T _J

T _C

P _D

* Z _θ_C(t )

1 0 ^-1

0 . 0 5

P_DM

0 . 0 2

0 . 0 1

t₁

s i n g le p u ls e

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁

, S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev. A2, December 2000

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

LI_AS

V_DS

I_D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. A2, December 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. A2, December 2000

Package Dimensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

–0.05

1.30

ø3.60 ±0.10

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20]

10.00 ±0.20

Rev. A2, December 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

result in significant injury to the user.

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. A, January 2000

FQP10N20L [FAIRCHILD]

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