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FQP6P25J69Z

更新时间：2024-09-18 14:22:44

品牌：FAIRCHILD

描述：Power Field-Effect Transistor, 6A I(D), 250V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

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FQP6P25J69Z 概述

Power Field-Effect Transistor, 6A I(D), 250V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN 功率场效应晶体管

FQP6P25J69Z 规格参数

生命周期：	Obsolete	零件包装代码：	SFM
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.66	Is Samacsys：	N
雪崩能效等级（Eas）：	540 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	250 V	最大漏极电流 (ID)：	6 A
最大漏源导通电阻：	1.1 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	24 A
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQP6P25J69Z 数据手册

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April 2000

QFET

FQP6P25

250V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

•

-6.0A, -250V, R

= 1.1Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 21 nC)

Low Crss ( typical 20 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

ꢀ

G_!

ꢀ

ꢁ

ꢀ

TO-220

FQP Series

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQP6P25

-250

-6.0

-3.8

-24

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

±ꢀ30

540

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

-6.0

9.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

-5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.72

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢀ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.39

Units

°CꢁW

0.5

62.5

Rev. A, April 2000

Electrical Characteristics

ꢀꢀꢀꢀꢀ

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

= 0 V, I = -250 µA

GS D

Drain-Source Breakdown Voltage

-250

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

= -250 µA, Referenced to 25°C

-0.1

V/°C

∆T

= -250 V, V = 0 V

-1

µA

DSS

Zero Gate Voltage Drain Current

= -200 V, T = 125°C

-10

= -30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

-100

100

GSSF

= 30 V, V = 0 V

GSSR

On Characteristics

= V , I = -250 µA

Gate Threshold Voltage

-3.0

-5.0

1.1

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

= -10 V, I = -3.0 A

0.82

3.3

= -40 V, I = -3.0 A

(Note 4)

Forward Transconductance

Dynamic Characteristics

Input Capacitance

600

115

780

150

iss

= -25 V, V = 0 V,

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

160

110

d(on)

= -125 V, I = -6.0 A,

= 25 Ω

d(off)

(Note 4, 5)

= -200 V, I = -6.0 A,

4.7

10.7

= -10 V

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

-6.0

-24

-5.0

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = -6.0 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = -6.0 A,

170

1.1

µC

(Note 4)

dI / dt = 100 A/µs

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 24mH, I = -6.0A, V = -50V, R = 25 Ω, Starting T = 25°C

3. I ꢀ -6.0A, di/dt ꢀ 300A/µs, V ꢀ BV

Starting T = 25°C

4. Pulse Test : Pulse width ꢀ 300µs, Duty cycle ꢀ 2%

DSS, J

5. Essentially independent of operating temperature

Rev. A, April 2000

Typical Characteristics

V_GS

Top :

-15V

-10V

-8.0V

-7.0V

-6.5V

-6.0V

10¹

Bottom : -5.5V

ꢀ

150

10⁰

ꢀ

-55

ꢀ

Notes :

ꢁ

ꢀ

Notes :

1. 250 s Pulse Test

2. T_C= 25

1. V_DS= -40V

-1

ꢂ

ꢁ

2. 250 s Pulse Test

-1

10⁰

10¹

-V_GS, Gate-Source Voltage [V]

-V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_GS= - 10V

V_GS= - 20V

ꢀ

150

ꢀ

Notes :

1. V_GS= 0V

2. 250 s Pulse Test

ꢀ

ꢁ

Note : T = 25

-1

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-I_D, Drain Current [A]

-V_SD, Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1400

1200

1000

800

600

400

200

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C

V_DS= -50V

V_DS= -125V

V_DS= -200V

C_rss= C

iss

oss

ꢀ

Notes :

1. V_GS= 0 V

2. f = 1 MHz

rss

ꢀ

Note : I_D= -6.0 A

-1

Q_G, Total Gate Charge [nC]

-V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A, April 2000

Typical Characteristics

(Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

0.9

0.8

ꢀ

Notes:

ꢀ

Notes :

1. V_GS= 0 V

2. I_D= -250

1. V_GS= -10 V

2. I_D= -3.0A

ꢁ

-100

-50

100

150

200

-100

-50

100

150

200

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

10²

Operation in This Area

is Limited by R _DS(on)

100 µs

10¹

1 ms

10 ms

10⁰

ꢀ

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-1

10⁰

10¹

10²

100

125

150

ꢀ

T_C, Case Temperature [

]

-V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

1 0 ⁰

D = 0 .5

ꢀ

N o te s

0 .2

0 .1

ꢁ

1 . _{J C}(t)

1 .3 9

/W M a x .

ꢀ

2 . D u ty F a c to r, D = t₁/t₂

3 . T _{J M}

T _C

P _D

_{J C}(t)

ꢀ

1 0 ^-1

0 .0 5

P_DM

0 .0 2

0 .0 1

t₁

s in g le p u ls e

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev. A, April 2000

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50Kꢀ

as DUT

Q_g

12V

200nF

-10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

-3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

t _on

t _off

V_DS

t_d(on)

t_r

t_d(off)

t_f

V_DD

V_GS

R_G

10%

DUT

-10V

90%

V_DS

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

t _p

Time

V_DD

V_DS(t)

R_G

V_DD

I_D(t)

DUT

-10V

I_AS

BV_DSS

t _p

Rev. A, April 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

V_DS

DUT

I _SD

Driver

R_G

Compliment of DUT

(N-Channel)

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

Body Diode Reverse Current

I_RM

I _SD

( DUT )

di/dt

I_FM, Body Diode Forward Current

V_SD

V_DS

( DUT )

Body Diode

V_DD

Forward Voltage Drop

Body Diode Recovery dv/dt

Rev. A, April 2000

Package Dimensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

–0.05

1.30

ø3.60 ±0.10

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20]

10.00 ±0.20

Rev. A, April 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

result in significant injury to the user.

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. A, January 2000

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