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元器件品牌
FQU2N60CTU
[FAIRCHILD]
Low Gate Charge (Typ. 8.5 nC); 低栅极电荷（典型值8.5 NC ）
元器件型号：
FQU2N60CTU
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
Low Gate Charge (Typ. 8.5 nC)
低栅极电荷（典型值8.5 NC ）
晶体 栅极 晶体管 功率场效应晶体管 开关 脉冲
PDF文件：
总9页 (文件大小：742K)
下载文档：
下载PDF数据表文档文件
型号参数：FQU2N60CTU参数
查看货源
FQU2N60TU
2A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
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156
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0
ROCHESTER
FQU2N60TU
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Warning
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156
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0
FAIRCHILD
FQU2N80
800V N-Channel MOSFET
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156
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56
FAIRCHILD
FQU2N80TU
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Warning
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156
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0
FAIRCHILD
FQU2N80TU
1.8A, 800V, 6.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
Warning
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156
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0
ROCHESTER
FQU2N90
900V N-Channel MOSFET
Warning
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156
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76
FAIRCHILD
FQU2N90TU
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Warning
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156
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0
FAIRCHILD
FQU2N90TU
1.7A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
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156
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0
ROCHESTER
FQU2N90TU_AM002
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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156
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0
FAIRCHILD
FQU2N90TU_WS
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
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156
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0
FAIRCHILD
FQU2P25
250V P-Channel MOSFET
Warning
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156
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20
FAIRCHILD
FQU2P25TU
暂无描述
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156
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0
FAIRCHILD
FQU2P40
400V P-Channel MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
32
FAIRCHILD
FQU30N06
60V N-Channel MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
40
FAIRCHILD
FQU30N06_09
60V N-Channel MOSFET
Warning
: Undefined variable $rtag in
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156
-
19
FAIRCHILD
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