FQU3N30 [FAIRCHILD]

300V N-Channel MOSFET; 300V N沟道MOSFET

FQU3N30


型号：	FQU3N30
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	300V N-Channel MOSFET 300V N沟道MOSFET
文件：	总9页 (文件大小：732K)
下载：	下载PDF数据表文档文件

FQU3N30TU

Power Field-Effect Transistor, 2.4A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

FQU3N40

400V N-Channel MOSFET

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32 FAIRCHILD

FQU3N40TU

2A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

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0 ROCHESTER

FQU3N50C

500V N-Channel MOSFET

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36 FAIRCHILD

FQU3N50C

500V N-Channel MOSFET

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26 FAIRCHILD

FQU3N50C

500V N-Channel MOSFET

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12 FAIRCHILD

FQU3N50CTU

500V N-Channel MOSFET

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21 FAIRCHILD

FQU3N50CTU

500V N-Channel MOSFET

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14 FAIRCHILD

FQU3N50CTU_NL

Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3

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0 FAIRCHILD

FQU3N60

600V N-Channel MOSFET

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36 FAIRCHILD

FQU3N60CTU

2.4A, 600V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, IPAK-3

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1 ROCHESTER

FQU3N60CTU

Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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0 FAIRCHILD

FQU3N60TU

2.4A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

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0 ROCHESTER

FQU3N60TU

Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

FQU3P20

Power Field-Effect Transistor, 2.4A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

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