FQU6N40CTU [FAIRCHILD]
Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3;型号: | FQU6N40CTU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:514K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
November 2013
FQD6N40C
®
N-Channel QFET MOSFET
400 V, 4.5 A, 1.0 Ω
Features
Description
•
•
•
•
4.5 A, 400 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 2.25 A
Low Gate Charge (Typ. 16 nC)
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Low Crss (Typ. 15 pF)
100% Avalanche Tested
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
FQD6N40CTM
Unit
V
Drain-Source Voltage
400
4.5
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
2.7
A
IDM
(Note 1)
Drain Current
18
A
VGSS
EAS
IAR
Gate-Source Voltage
30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
270
4.5
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
4.8
mJ
V/ns
W
4.5
2.5
PD
Power Dissipation (TC = 25°C)
48
W
- Derate above 25°C
0.38
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
FQD6N40CTM
Unit
RθJC
Thermal Resistance, Junction-to-Case, Max.
2.6
110
50
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.
°C/W
RθJA
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©2007 Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD6N40C
FQD6N40CTM
D-PAK
330 mm
16 mm
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
Drain-Source Breakdown Voltage
400
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
I
0.54
V/°C
/
ΔTJ Coefficient
V
V
DS = 400 V, VGS = 0 V
DS = 320 V, TC = 125°C
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
IDSS
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
2.0
--
--
4.0
1
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 2.25A
0.83
4.7
gFS
VDS = 40 V, ID = 2.25A
Forward Transconductance
--
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
480
80
625
105
20
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
15
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
13
65
21
38
16
2.3
8.2
35
140
55
85
20
--
ns
ns
VDD = 200 V, ID = 6A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = 320 V, ID = 6A,
Qgs
Qgd
VGS = 10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.5
18
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 4.5 A
GS = 0 V, IS = 6 A,
dIF / dt = 100 A/μs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
230
1.7
ns
μC
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 13.7 mH, I = 6 A, V = 50V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 6A, di/dt ≤ 200A/μs, V ≤ BV
starting T = 25°C.
J
SD
DD
DSS,
4. Essentially independent of operating temperature.
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©2007Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
2
Typical Characteristics
VGS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
101
101
Bottom: 5.0V
150oC
100
25oC
-55oC
100
※Notes :
1. VDS = 40V
2. 250μs Pulse Test
※Notes :
1. 250μs Pulse Test
2. TC = 25℃
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
101
VGS = 10V
100
VGS = 20V
※Notes :
150℃
25℃
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 80V
Crss = C
gd
1000
800
600
400
200
0
VDS = 200V
VDS = 320V
C
iss
C
6
oss
4
※Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※Note : ID = 6A
0
-1
0
10
1
10
0
5
10
15
20
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2007Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
3
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes:
0.9
1. V = 0 V
2. IDG=S 250 μA
※Notes :
1. VGS = 10 V
2. ID = 2.25 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
5
Operation in This Area
is Limited by R DS(on)
4
3
2
1
0
1
10 μs
10
100 μs
1 ms
10 ms
0
10
DC
-1
10
※Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
3
10
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
D = 0 .5
100
※
N otes
1. Z
:
(t)
= 2.6 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
0.2
0 .1
3. TJM
-
TC
=
P DM
*
Zθ JC(t)
0 .0 5
PDM
10-1
0 .0 2
t1
0 .0 1
sin gle p ulse
t2
1 0-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
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©2007Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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©2007Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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©2007Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
6
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimension in Millimeters
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©2007Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
7
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2007 Fairchild Semiconductor Corporation
FQD6N40C Rev. C1
8
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