FRS244H [FAIRCHILD]
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,;
| 型号： | FRS244H |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRS244D, FRS244R,
FRS244H
9A, 250V, 0.415 Ohm, Rad Hard,
N-Channel Power MOSFETs
June 1998
Features
Package
•
•
•
9A, 250V, RDS(on) = 0.415Ω
TO-257AA
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
•
Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
•
•
Photo Current - 7.0nA Per-RAD(Si)/sec Typically
Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm
2
2
- Usable to 1E14 Neutrons/cm
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.Total dose hard-
ness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang-
ing from 1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12
with current limiting.
Symbol
2
2
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified
FRS244D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
250
250
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
9
6
27
20
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
75
30
0.60
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
27
9
27
A
A
A
o
-55 to +150
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
C
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
FRS244D, FRS244R, FRS244H
o
Pre-Radiation Electrical Specifications TC = +25 C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
SYMBOL
BVDSS
VGS(th)
IGSSF
TEST CONDITIONS
VGS = 0, ID = 1mA
MIN
250
2.0
-
MAX
-
UNITS
V
VDS = VGS, ID = 1mA
VGS = +20V
4.0
100
100
V
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
nA
IGSSR
VGS = -20V
-
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125 C
-
-
-
1
0.025
0.25
mA
o
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
IAR
VDS(on)
RDS(on)
td(on)
tr
Time = 20µs
-
-
27
3.92
0.415
46
A
V
Ω
VGS = 10V, ID = 9A
VGS = 10V, ID = 6A
-
VDD = 125V, ID = 9A
Pulse Width = 3µs
-
-
100
368
124
8
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
Period = 300µs, Rg = 25Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
-
-
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
QG(th)
QG(on)
QGM
VGP
2
29
55
2
4
12
0.6
-
116
220
10
nc
VDD = 125V, ID = 9A
IGS1 = IGS2
0 ≤ VGS ≤ 20
Plateau Voltage
V
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
QGS
QGD
VSD
18
nc
48
ID = 9A, VGD = 0
1.8
840
1.67
60
V
TT
I = 9A; di/dt = 100A/µs
ns
Rθjc
-
o
C/W
Junction-To-Ambient
Rθja
Free Air Operation
-
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DD
V
DS
L
R
L
+
CURRENT
TRANSFORMER
I
V
AS
DS
-
V
= 12V
GS
VARY t TO OBTAIN
P
DUT
+
50Ω
REQUIRED PEAK I
AS
V
DD
0V
V
≤ 20V
GS
-
R
50V-150V
DUT
GS
50Ω
t
P
0V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
FRS244D, FRS244R, FRS244H
o
Post-Radiation Electrical Specifications TC = +25 C, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
BVDSS
BVDSS
VGS(th)
VGS(th)
IGSSF
TYPE
TEST CONDITIONS
VGS = 0, ID = 1mA
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 200V
VGS = 0, VDS = 200V
VGS = 10V, ID = 9A
VGS = 16V, ID = 9A
VGS = 10V, ID = 6A
VGS = 14V, ID = 6A
MIN
MAX
-
UNITS
V
Drain-Source
(Note 4, 6)
FRS244D, R
FRS244H
250
Breakdown Volts
(Note 5, 6)
238
-
V
Gate-Source
(Note 4, 6)
FRS244D, R
FRS244H
2.0
4.0
V
Threshold Volts
(Note 3, 5, 6)
(Note 4, 6)
1.5
4.5
V
Gate-Body
FRS244D, R
FRS244H
-
-
-
-
-
-
-
-
-
-
100
200
100
200
25
nA
nA
nA
nA
µA
µA
V
Leakage Forward
(Note 5, 6)
IGSSF
Gate-Body
(Note 2, 4, 6)
(Note 2, 5, 6)
(Note 4, 6)
IGSSR
IGSSR
IDSS
FRS244D, R
FRS244H
Leakage Reverse
Zero-Gate Voltage
Drain Current
FRS244D, R
FRS244H
(Note 5, 6)
IDSS
100
3.92
5.88
0.415
0.623
Drain-Source
On-State Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
(Note 1, 4, 6)
(Note 1, 5, 6)
VDS(on)
VDS(on)
RDS(on)
RDS(on)
FRS244D, R
FRS244H
V
Drain-Source
On Resistance
FRS244D, R
FRS244H
Ω
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/30/90 on TA17643 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
FRS244D, FRS244R, FRS244H
Typical Performance Characteristics
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
FRS244D, FRS244R, FRS244H
Typical Performance Characteristics (Continued)
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
FRS244D, FRS244R, FRS244H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
C. Preconditioning - Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
B. Assembly Flow Chart
C. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- X-Ray and X-Ray Report
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
FRS244D, FRS244R, FRS244H
TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE
A
INCHES
MIN
MILLIMETERS
ØP
E
A
1
SYMBOL
MAX
0.200
0.045
0.035
0.090
0.665
0.420
MIN
4.83
MAX
5.08
NOTES
A
0.190
0.035
0.025
0.060
0.645
0.410
-
Q
H
1
A
0.89
1.14
-
1
Øb
0.64
0.88
2, 3
D
Øb
D
E
1.53
2.28
-
-
1
16.39
10.42
16.89
10.66
-
e
0.100 TYP
0.200 BSC
2.54 TYP
5.08 BSC
4
4
-
e
0.065 R TYP.
1
Øb1
L
1
H
0.230
0.250
0.130
0.650
0.035
0.150
0.133
5.85
6.35
3.30
16.51
0.88
3.81
3.37
1
J
0.110
0.600
-
2.80
15.24
-
4
-
L
1
b
L
L
-
1
ØP
Q
0.140
0.113
3.56
2.88
-
1
2
e
3
J
-
1
e1
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-257AA dated 9-88.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.150 inches (3.81mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
©2001 Fairchild Semiconductor Corporation
FRK264D, FRK264R, FRK264H Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET™
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
相关型号：
FRS244H4
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
FAIRCHILD
FRS244R
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
FAIRCHILD
FRS244R4
Power Field-Effect Transistor, 9A I(D), 250V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明