FSBCW30L99Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SUPERSOT-3;
| 型号： | FSBCW30L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SUPERSOT-3 |
| 文件： | 总5页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
FSBCW30
C
E
B
SuperSOTTM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
32
32
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FSBCW30
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
500
4
250
mW
mW/°C
°C/W
RθJA
*Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in2 of 2oz copper.
1998 Fairchild Semiconductor Corporation
FSBCW30, Rev B
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BVCEO
Collector-Em itter Breakdown
IC = 2.0 m A, IB = 0
32
V
Voltage
BVCBO
BVCES
Collector-Base Breakdown Voltage
32
32
V
V
IC = 10 µA, IE = 0
IC = 10 µA, IE = 0
Collector-Em itter Breakdown
Voltage
BVEBO
ICBO
Em itter-Base Breakdown Voltage
5.0
V
IE = 10 µA, IC = 0
Collector-Cutoff Current
VCB = 32 V, IE = 0
VCB = 32 V, IE = 0, TA = +100
100
10
nA
µA
°C
ON CHARACTERISTICS
hFE
DC Current Gain
VCE = 5.0 V, IC = 2.0 mA
215
500
0.30
0.75
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA
V
V
VCE(sat)
VBE(on)
0.60
SMALL SIGNAL CHARACTERISTICS
NF
Noise Figure
10
dB
VCE = 5.0 V, I = 200 A,
µ
C
R = 2.0 k , f = 1.0 kHz,
Ω
S
BW = 200 Hz
FSBCW30, Rev B
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.3
0.25
0.2
VCE = 5V
125 °C
β
= 10
0.15
0.1
25 °C
25 °C
- 40 °C
0.05
125 ºC
- 40 ºC
0
0.1
1
10
100
300
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1.2
1
0.8
0.6
0.4
0.2
0
β
= 10
1
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
- 40 ºC
25 °C
125 ºC
125 ºC
V
= 5V
CE
0.1
1
10
100
300
0.1
1
10
100 200
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
100
10
V
= 50V
CB
95
90
85
80
75
70
1
0.1
0.01
25
50
75
100
125
0.1
1
10
100
1000
TA- AMBIENT TEMPERATURE (ºC)
RESISTANCE (kΩ)
FSBCW30, Rev B
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Input and Output Capacitance
vs Reverse Voltage
Collector Saturation Region
4
100
Ta = 25°C
f = 1.0 MHz
3
2
Ic =
100 uA
300 mA
10
50 mA
Cib
1
0
Cob
100
300
700
2000 4000
0.1
1
10
100
I
- BASE CURRENT (uA)
B
V
- COLLECTOR VOLTAGE(V)
ce
Switching Times vs
Collector Current
Gain Bandwidth Product
vs Collector Current
300
270
240
210
180
150
120
90
40
t
V
= 5V
s
ce
30
20
10
0
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
r
60
30
t
d
0
10
20
30
50
100
200 300
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
IC- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
700
600
500
TO-92
SOT-23
400
300
200
100
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
FSBCW30, Rev B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SUPERSOT-3
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