FSQ0565RWDTU_技术文档

June 2008

FSQ0565R, FSQ0765R

Green-Mode Fairchild Power Switch (FPS™) for

Quasi-Resonant Operation - Low EMI and High Efficiency

Features

Description

Optimized for Quasi-Resonant Converter (QRC)

A Quasi-Resonant Converter (QRC) generally shows

lower EMI and higher power conversion efficiency than a

Low EMI through Variable Frequency Control and AVS

(Alternating Valley Switching)

conventional hard-switched converter with a fixed

switching frequency. The FSQ-series is an integrated

Pulse-Width Modulation (PWM) controller and

SenseFET specifically designed for quasi-resonant

operation and Alternating Valley Switching (AVS). The

PWM controller includes an integrated fixed-frequency

oscillator, Under-Voltage Lockout (UVLO), Leading-

Edge Blanking (LEB), optimized gate driver, internal soft-

start, temperature-compensated precise current sources

for a loop compensation, and self-protection circuitry.

Compared with a discrete MOSFET and PWM controller

solution, the FSQ-series can reduce total cost,

component count, size, and weight; while simultaneously

increasing efficiency, productivity, and system reliability.

This device provides a basic platform for cost-effective

designs of quasi-resonant switching flyback converters.

High-Efficiency through Minimum Voltage Switching

Narrow Frequency Variation Range over Wide Load

and Input Voltage Variation

Advanced Burst-Mode Operation for Low Standby

Power Consumption

Simple Scheme for Sync Voltage Detection

Pulse-by-Pulse Current Limit

Various Protection functions: Overload Protection

(OLP), Over-Voltage Protection (OVP), Abnormal

Over-Current Protection (AOCP), Internal Thermal

Shutdown (TSD) with Hysteresis, Output Short

Protection (OSP)

Under-Voltage Lockout (UVLO) with Hysteresis

Internal Start-up Circuit

Internal High-Voltage Sense FET (650V)

Built-in Soft-Start (17.5ms)

Applications

Power Supply for LCD TV and Monitor, VCR, SVR,

STB, and DVD & DVD Recorder

Adapter

Related Resourses

Visit: http://www.fairchildsemi.com/apnotes/ for:

AN-4134: Design Guidelines for Offline Forward

Converters Using Fairchild Power Switch (FPS^™)

AN-4137: Design Guidelines for Offline Flyback

Converters Using Fairchild Power Switch (FPS^™)

AN-4140: Transformer Design Consideration for

Offline Flyback Converters Using Fairchild Power

Switch (FPS^™)

AN-4141: Troubleshooting and Design Tips for

Fairchild Power Switch (FPS^™) Flyback Applications

AN-4145: Electromagnetic Compatibility for Power

Converters

AN-4147: Design Guidelines for RCD Snubber of

Flyback

AN-4148: Audible Noise Reduction Techniques for

Fairchild Power Switch Fairchild Power Switch(FPS^™)

Applications

AN-4150: Design Guidelines for Flyback Converters

Using FSQ-Series Fairchild Power Switch (FPS^™)

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

Ordering Information

Maximum Output Power⁽¹⁾

230V_AC±15%⁽²⁾

85-265V_AC

Product

Number

Operating Current R_DS(ON)

Temp.

Replaces

Devices

PKG.⁽⁵⁾

Limit

Max.

Open

Adapter⁽³⁾

Frame⁽⁴⁾

FSCM0565R

FSDM0565RB

FSQ0565R TO-220F-6L -40 to +85°C

3.0A

3.5A

2.2Ω

1.6Ω

70W

80W

90W

41W

60W

70W

FSCM0765R

FSDM0765RB

FSQ0765R TO-220F-6L -40 to +85°C

80W

48W

Notes:

1. The junction temperature can limit the maximum output power.

2. 230V_ACor 100/115V_ACwith doubler.

3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.

4. Maximum practical continuous power in an open-frame design at 50°C ambient.

5. These parts are RoHS compliant.

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

2

Application Diagram

V_O

AC

IN

V_str

Drain

PWM

Sync

GND

V_CC

FB

FSQ0765R Rev.00

Figure 1. Typical Flyback Application

Internal Block Diagram

V_CC

3

V_str

6

Sync

5

Drain

1

OSC

AVS

V_ref

0.35/0.55

V_Burst

V_CCgood

V_CC

V_ref

8V/12V

I_delay

I_FB

PWM

FB

4

3R

S

R

Q

Gate

driver

Soft-

Start

LEB

250ns

R

t

ON

< t

OSP

after SS

LPF

V

OSP

AOCP

2

S

R

Q

V

V_OCP

(1.1V)

TSD

SD

GND

Q

LPF

V

OVP

V_CCgood

FSQ0765R Rev.00

Figure 2. Internal Block Diagram

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

3

Pin Configuration

6. V_str

5. Sync

4. FB

3. V_CC

2. GND

1. Drain

FSQ0765R Rev.00

Figure 3. Pin Configuration (Top View)

Pin Definitions

Pin #

Name

Drain

GND

Description

1

2

SenseFET drain. High-voltage power SenseFET drain connection.

Ground. This pin is the control ground and the SenseFET source.

Power Supply. This pin is the positive supply input. This pin provides internal operating cur-

rent for both start-up and steady-state operation.

3

4

5

6

V_CC

Feedback. This pin is internally connected to the inverting input of the PWM comparator. The

collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should

be placed between this pin and GND. If the voltage of this pin reaches 6V, the overload pro-

tection triggers, which shuts down the FPS.

FB

Sync. This pin is internally connected to the sync-detect comparator for quasi-resonant switch-

ing. In normal quasi-resonant operation, the threshold of the sync comparator is 1.2V/1.0V.

Sync

V_str

Start-up. This pin is connected directly, or through a resistor, to the high-voltage DC link. At

start-up, the internal high-voltage current source supplies internal bias and charges the exter-

nal capacitor connected to the V_CCpin. Once V_CCreaches 12V, the internal current source is

disabled. It is not recommended to connect V_strand Drain together.

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

4

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. T_A= 25°C, unless otherwise specified.

Symbol

V_str

Parameter

Min.

500

Max.

Unit

V

V_strPin Voltage

Drain Pin Voltage

Supply Voltage

V_DS

650

V

V_CC

20

13

V

V_FB

Feedback Voltage Range

Sync Pin Voltage

-0.3

V

V_Sync

13

V

FSQ0565R

FSQ0765R

11

A

I_DM

Drain Current Pulsed

14.4

2.8

1.7

3.6

2.28

190

570

45

A

T_C= 25°C

T_C= 100°C

T_C= 25°C

T_C= 100°C

FSQ0565R

FSQ0765R

A

I_D

Continuous Drain Current⁽⁶⁾

FSQ0565R

FSQ0765R

Total Power Dissipation(Tc=25^oC)

mJ

W

Single Pulsed Avalanche

Energy⁽⁷⁾

E_AS

P_D

T_J

Internally

limited

Operating Junction Temperature

-40

°C

T_A

Operating Ambient Temperature

Storage Temperature

-40

-55

+85

°C

kV

T_STG

+150

Electrostatic Discharge Capability, Human Body Model

Electrostatic Discharge Capability, Charged Device Model

2.0

ESD

Notes:

6. Repetitive rating: Pulse width limited by maximum junction temperature.

7. L=14mH, starting T_J=25°C.

Thermal Impedance

T_A= 25°C unless otherwise specified.

Symbol

θ_JA

Parameter

Junction-to-Ambient Thermal Resistance⁽⁸⁾

Junction-to-Case Thermal Resistance⁽⁹⁾

Package

Value

50

Unit

^°C/W

TO-220F-6L

θ_JC

2.8

Notes:

8. Free standing with no heat-sink under natural convection.

9. Infinite cooling condition - refer to the SEMI G30-88.

www.fairchildsemi.com

FSQ0565R, FSQ0765R Rev. 1.0.1

5

Electrical Characteristics

T_A= 25°C unless otherwise specified.

Symbol

Parameter

Condition

Min. Typ. Max. Unit

SENSEFET SECTION

BV_DSS

I_DSS

Drain Source Breakdown Voltage

Zero-Gate-Voltage Drain Current

V_CC= 0V, I_D= 100µA

V_DS= 560V

650

V

300

µA

FSQ0565R T_J= 25°C, I_D= 0.5A

FSQ0765R T_J= 25°C, I_D= 0.5A

FSQ0565R

1.76 2.20

Drain-Source On-State

Resistance

R_DS(ON)

C_OSS

t_d(on)

t_r

Ω

pF

ns

1.3

78

1.6

Output Capacitance

Turn-On Delay Time

Rise Time

V_GS= 0V, V_DS= 25V, f = 1MHz

FSQ0765R

FSQ0565R

FSQ0765R

FSQ0565R

FSQ0765R

FSQ0565R

FSQ0765R

FSQ0565R

FSQ0765R

125

22

V_DD= 350V, I_D= 25mA

22

52

70

95

t_d(off)

Turn-Off Delay Time

Fall Time

105

50

t_f

65

CONTROL SECTION

t_ON.MAXMaximum On Time

t_B

T_J= 25°C

8.8 10.0 11.2

13.5 15.0 16.5

6.0

µs

Blanking Time

T_J= 25°C, V_sync= 5V

T_J= 25°C, V_sync= 0V

t_W

Detection Time Window

f_S

Initial Switching Frequency

59.6 66.7 75.8 kHz

Δf_S

t_AVS

Switching Frequency Variation⁽¹¹⁾

-25°C < T_J< 85°C

±5

±10

%

On Time

4.0

µs

at V_IN= 240V_DC, Lm = 360μH

(AVS triggered when V_AVS>spec

& t_AVS<spec.)

AVS Triggering

Feedback

Voltage

Threshold⁽⁹⁾

V_AVS

t_SW

1.2

V

Sync = 500kHz sine input

V_FB= 1.2V, t_ON= 4.0µs

Switching Time Variance by AVS⁽¹¹⁾

13.5

20.5

µs

I_FB

D_MIN

Feedback Source Current

Minimum Duty Cycle

V_FB= 0V

700 900 1100 µA

0

13

9

%

V

V_START

V_STOP

t_S/S

11

7

12

8

UVLO Threshold Voltage

After turn-on

V

Internal Soft-Start Time

With free-running frequency

17.5

ms

BURST-MODE SECTION

V_BURH

T_J= 25°C, t_PD= 200ns⁽¹⁰⁾

0.45 0.55 0.65

0.25 0.35 0.45

200

V

V_BURL

Burst-Mode Voltages

Hysteresis

mV

Continued on the following page...

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

6

Electrical Characteristics (Continued)

T_A= 25°C unless otherwise specified.

Symbol

Parameter

Condition

Min. Typ. Max. Unit

PROTECTION SECTION

FSQ0565R

FSQ0765R

T_J= 25°C, di/dt = 370mA/µs

T_J= 25°C, di/dt = 460mA/µs

V_CC= 15V

2.64 3.00 3.36

A

PeakCurrent

I_LIMIT

Limit

3.08 3.50 3.92

V_SD

I_DELAY

t_LEB

Shutdown Feedback Voltage

5.5

4

6.0

5

6.5

6

V

Shutdown Delay Current

V_FB= 5V

µA

ns

µs

Leading-Edge Blanking Time⁽¹¹⁾

Threshold Time

250

1.2

t_OSP

1.4

T_J= 25°C

Output Short Threshold Feedback

Protection⁽⁹⁾Voltage

OSP triggered when t_ON<t_OSP

V_FB>V_OSP& lasts longer than

t_{OSP_FB}

,

V_OSP

1.8

2

2.0

2.5

V

t_{OSP_FB}

T_SD

Feedback Blanking Time

3.0

µs

Shutdown Temperature

Hysteresis

125 140 155

60

Thermal

°C

Shutdown⁽⁹⁾

Hys

SYNC SECTION

V_SH1

1.0

0.8

1.2

1.0

230

4.7

4.4

1.4

1.2

Sync Threshold Voltage 1

Sync Delay Time^(11)(12)

V_CC= 15V, V_FB= 2V

V

ns

V

V_SL1

t_sync

V_SH2

V_SL2

4.3

4.0

5.1

4.8

Sync Threshold Voltage 2

Low Clamp Voltage

I_{SYNC_MAX}= 800µA

I_{SYNC_MIN}= 50µA

V_CLAMP

0.0

0.4

0.8

V

V_OVP

t_OVP

Threshold Voltage

Blanking Time⁽¹¹⁾

V_CC= 15V, V_FB= 2V

7.4

1.0

8

9.6

2.4

V

Over-Voltage

Protection

1.7

µs

TOTAL DEVICE SECTION

Operating Supply Current

(Control Part Only)

I_OP

V

_CC= 13V

1

3

5

mA

µA

V_CC= 10V

(before V_CCreaches V_START

I_START

Start Current

350 450 550

)

Start-up Charging Current

V_CC= 0V, V_STR= mininmum

50V

I_CH

0.65 0.85 1.00 mA

V_STR

Minimum V_STRSupply Voltage

26

V

Notes:

10. Propagation delay in the control IC.

11. Guaranteed by design, but not tested in production.

12. Includes gate turn-on time.

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

7

Comparison Between FSDM0x65RNB and FSQ-Series

Function

FSDM0x65RE

FSQ-Series

FSQ-Series Advantages

Improved efficiency by valley switching

Reduced EMI noise

Reduced components to detect valley point

Constant

Frequency PWM

Quasi-Resonant

Operation

Operation Method

Valley Switching

Reduce EMI Noise Inherent Frequency Modulation

Alternate Valley Switching

Frequency

Modulation

EMI Reduction

Hybrid Control

CCM or AVS

Based on Load Improves efficiency by introducing hybrid control

and Input Condition

Advanced

Burst-Mode

Operation

Burst-Mode

Operation

Burst-Mode

Operation

Improved standby power by AVS in burst-mode

Improved reliability through precise AOCP

Improved reliability through precise OSP

OLP, OVP,

AOCP, OSP

Strong Protections

TSD

OLP, OVP

145^°C without

Hysteresis

140°C with 60°C

Hysteresis

Stable and reliable TSD operation

Converter temperature range

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

8

Typical Performance Characteristics

These characteristic graphs are normalized at T_A= 25°C.

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 4. Operating Supply Current (I_OP) vs. T_A

Figure 5. UVLO Start Threshold Voltage

(V_START) vs. T_A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 6. UVLO Stop Threshold Voltage

(V_STOP) vs. T_A

Figure 7. Start-up Charging Current (I_CH) vs. T_A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 8. Initial Switching Frequency (f_S) vs. T_A

Figure 9. Maximum On Time (t_ON.MAX) vs. T_A

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

9

Typical Performance Characteristics (Continued)

These characteristic graphs are normalized at T_A= 25°C.

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 10. Blanking Time (t_B) vs. T_A

Figure 11. Feedback Source Current (I_FB) vs. T_A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 12. Shutdown Delay Current (I_DELAY) vs. T_A

Figure 13. Burst-Mode High Threshold Voltage

(V_burh) vs. T_A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 14. Burst-Mode Low Threshold Voltage

(V_burl) vs. T_A

Figure 15. Peak Current Limit (I_LIM) vs. T_A

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

10

Typical Performance Characteristics (Continued)

These characteristic graphs are normalized at T_A= 25°C.

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 16. Sync High Threshold Voltage 1

(V_SH1) vs. T_A

Figure 17. Sync Low Threshold Voltage 1

(V_SL1) vs. T_A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 18. Shutdown Feedback Voltage (V_SD) vs. T_A

Figure 19. Over-Voltage Protection (V_OV) vs. T_A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20

0

20 40 60 80 100 120

-40 -20

0

20 40 60 80 100 120

Temperature [°C]

Figure 20. Sync High Threshold Voltage 2

(V_SH2) vs. T_A

Figure 21. Sync Low Threshold Voltage 2

(V_SL2) vs. T_A

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

11

2.2 Leading-Edge Blanking (LEB): At the instant the

internal SenseFET is turned on, a high-current spike

usually occurs through the SenseFET, caused by

primary-side capacitance and secondary-side rectifier

reverse recovery. Excessive voltage across the R_sense

Functional Description

1. Start-up: At start-up, an internal high-voltage current

source supplies the internal bias and charges the

external capacitor (C_a) connected to the V_CCpin, as

illustrated in Figure 22. When V_CCreaches 12V, the

resistor would lead to incorrect feedback operation in the

current-mode PWM control. To counter this effect, the

FPS employs a leading-edge blanking (LEB) circuit. This

circuit inhibits the PWM comparator for a short time

(t_LEB) after the SenseFET is turned on.

FPS™ begins switching and the internal high-voltage

current source is disabled. The FPS continues its normal

switching operation and the power is supplied from the

auxiliary transformer winding unless V_CCgoes below the

stop voltage of 8V.

V_ref

V_CC

I_delay

V_DC

I_FB

V_FB

V_O

SenseFET

OSC

4

FOD817A

D1

D2

C_a

C_B

3R

R

+

Gate

V_FB

*

driver

V_CC

KA431

-

V_str

3

6

OLP

R_sense

V_SD

I_CH

FSQ0765R Rev. 00

V_ref

8V/12V

V_CCgood

Figure 23. Pulse-Width-Modulation (PWM) Circuit

Internal

Bias

3. Synchronization: The FSQ-series employs a quasi-

resonant switching technique to minimize the switching

noise and loss. The basic waveforms of the quasi-

resonant converter are shown in Figure 24. To minimize

the MOSFET's switching loss, the MOSFET should be

turned on when the drain voltage reaches its minimum

value, which is indirectly detected by monitoring the V_CC

FSQ0765R Rev.00

Figure 22. Start-up Circuit

2. Feedback Control: FPS employs current-mode

control, as shown in Figure 23. An opto-coupler (such as

the FOD817A) and shunt regulator (such as the KA431)

are typically used to implement the feedback network.

Comparing the feedback voltage with the voltage across

the R_senseresistor makes it possible to control the

winding voltage, as shown in Figure 24.

V_ds

V_RO

switching duty cycle. When the reference pin voltage of

the shunt regulator exceeds the internal reference

voltage of 2.5V, the opto-coupler LED current increases,

pulling down the feedback voltage and reducing the duty

cycle. This typically happens when the input voltage is

increased or the output load is decreased.

V_RO

V_DC

t_F

V_sync

V_ovp(8V)

2.1 Pulse-by-Pulse Current Limit: Because current-

mode control is employed, the peak current through the

SenseFET is limited by the inverting input of PWM

comparator (V_FB*), as shown in Figure 23. Assuming

1.2V

1.0V

230ns Delay

that the 0.9mA current source flows only through the

internal resistor (3R + R = 2.8k), the cathode voltage of

diode D2 is about 2.5V. Since D1 is blocked when the

feedback voltage (V_FB) exceeds 2.5V, the maximum

MOSFET Gate

ON

voltage of the cathode of D2 is clamped at this voltage,

clamping V_FB*. Therefore, the peak value of the current

FSQ0765R Rev.00

through the SenseFET is limited.

Figure 24. Quasi-Resonant Switching Waveforms

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

12

The switching frequency is the combination of blank time

(t_B) and detection time window (t_W). In case of a heavy

t_X

t_B=15μs

load, the sync voltage remains flat after t_Band waits for

valley detection during t_W. This leads to a low switching

frequency not suitable for heavy loads. To correct this

drawback, additional timing is used. The timing

conditions are described in Figures 25, 26, and 27. When

the V_syncremains flat higher than 4.4V at the end of t_B

I_DS

V_DS

that is t_X, the next switching cycle starts after internal

delay time from t_X. In the second case, the next switching

occurs on the valley when the V_syncgoes below 4.4V

within t_B. Once V_syncdetects the first valley within t_B, the

other switching cycle follows classical QRC operation.

ingnore

4.4V

V_sync

1.2V

1.0V

internal delay

FSQ0765R Rev. 00

t_X

t_B=15μs

Figure 27. After V_syncFinds First Valley

I_DS

4. Protection Circuits: The FSQ-series has several

self-protective functions, such as Overload Protection

(OLP), Abnormal Over-Current Protection (AOCP),

Over-Voltage Protection (OVP), and Thermal Shutdown

(TSD). All the protections are implemented as auto-

restart mode. Once the fault condition is detected,

switching is terminated and the SenseFET remains off.

This causes V_CCto fall. When V_CCfalls down to the

V_DS

4.4V

V_sync

Under-Voltage Lockout (UVLO) stop voltage of 8V, the

protection is reset and the start-up circuit charges the

V_CCcapacitor. When the V_CCreaches the start voltage

1.2V

1.0V

internal delay

FSQ0765R Rev. 00

of 12V, normal operation resumes. If the fault condition is

not removed, the SenseFET remains off and V_CCdrops

Figure 25. V_sync> 4.4V at t_X

to stop voltage again. In this manner, the auto-restart can

alternately enable and disable the switching of the power

SenseFET until the fault condition is eliminated.

Because these protection circuits are fully integrated into

the IC without external components, the reliability is

improved without increasing cost.

t_X

t_B=15μs

Fault

occurs

Fault

removed

Power

on

V_DS

I_DS

V_DS

V_CC

4.4V

12V

8V

V_sync

1.2V

1.0V

t

internal delay

FSQ0765R Rev. 00

Normal

operation

Fault

situation

Normal

operation

FSQ0765R Rev. 00

Figure 26. V_sync< 4.4V at t_X

Figure 28. Auto Restart Protection Waveforms

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

13

4.1 Overload Protection (OLP): Overload is defined as

the load current exceeding its normal level due to an

unexpected abnormal event. In this situation, the

protection circuit should trigger to protect the SMPS.

However, even when the SMPS is in the normal

operation, the overload protection circuit can be

triggered during the load transition. To avoid this

undesired operation, the overload protection circuit is

designed to trigger only after a specified time to

determine whether it is a transient situation or a true

overload situation. Because of the pulse-by-pulse

current limit capability, the maximum peak current

through the SenseFET is limited, and therefore the

maximum input power is restricted with a given input

voltage. If the output consumes more than this maximum

power, the output voltage (V_O) decreases below the set

3R

R

OSC

PWM

S

R

Q

Gate

driver

LEB

250ns

R_sense

+

-

2

AOCP

FSQ0765R Rev.00

GND

V_OCP

Figure 30. Abnormal Over-Current Protection

4.3 Output-Short Protection (OSP): If the output is

shorted, steep current with extremely high di/dt can flow

through the SenseFET during the LEB time. Such a

steep current brings high voltage stress on drain of

SenseFET when turned off. To protect the device from

such an abnormal condition, OSP is included in the FSQ-

series. It is comprised of detecting V_FBand SenseFET

voltage. This reduces the current through the opto-

coupler LED, which also reduces the opto-coupler

transistor current, thus increasing the feedback voltage

(V_FB). If V_FBexceeds 2.5V, D1 is blocked and the 5µA

current source starts to charge CB slowly up to V_CC. In

this condition, V_FBcontinues increasing until it reaches

turn-on time. When the V_FBis higher than 2V and the

6V, when the switching operation is terminated, as

shown in Figure 29. The delay time for shutdown is the

time required to charge C_FBfrom 2.5V to 6V with 5µA. A

SenseFET turn-on time is lower than 1.2µs, the FPS

recognizes this condition as an abnormal error and shuts

down PWM switching until V_CCreaches V_startagain. An

20 ~ 50ms delay time is typical for most applications.

abnormal condition output short is shown in Figure 31.

Turn-off delay

MOSFET

Rectifier

FSQ0765R Rev.00

V_FB

Drain

Diode Current

Current

Overload protection

6.0V

I_LIM

V_FB

0

Minimum turn-on time

D

2.5V

V_o

1.2us

t₁₂= C_FB*(6.0-2.5)/I_delay

output short occurs

0

t₁

t₂

t

I_o

FSQ0765R Rev. 00

Figure 29. Overload Protection

0

Figure 31. Output Short Waveforms

4.2 Abnormal Over-Current Protection (AOCP): When

the secondary rectifier diodes or the transformer pins are

shorted, a steep current with extremely high di/dt can

flow through the SenseFET during the LEB time. Even

though the FSQ-series has overload protection, it is not

enough to protect the FSQ-series in that abnormal case,

since severe current stress is imposed on the SenseFET

until OLP triggers. The FSQ-series has an internal

AOCP circuit shown in Figure 30. When the gate turn-on

signal is applied to the power SenseFET, the AOCP

block is enabled and monitors the current through the

sensing resistor. The voltage across the resistor is

compared with a preset AOCP level. If the sensing

resistor voltage is greater than the AOCP level, the set

signal is applied to the latch, resulting in the shutdown of

the SMPS.

4.4 Over-Voltage Protection (OVP): If the secondary-

side feedback circuit malfunctions or a solder defect

causes an opening in the feedback path, the current

through the opto-coupler transistor becomes almost

zero. Then, V_FBclimbs up in a similar manner to the

overload situation, forcing the preset maximum current

to be supplied to the SMPS until the overload protection

triggers. Because more energy than required is provided

to the output, the output voltage may exceed the rated

voltage before the overload protection triggers, resulting

in the breakdown of the devices in the secondary side.

To prevent this situation, an OVP circuit is employed. In

general, the peak voltage of the sync signal is

proportional to the output voltage and the FSQ-series

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

14

uses a sync signal instead of directly monitoring the

output voltage. If the sync signal exceeds 8V, an OVP is

triggered, shutting down the SMPS. To avoid undesired

triggering of OVP during normal operation, there are 2

points to be considered which is depicted in Figure 32.

One is the making the peak voltage of the sync signal

should be designed below 6V and the other is that be

sure to make the spike of sync pin as los as possible not

to get longer than t_OVPby decreasing the leakage

6. Burst Operation: To minimize power dissipation in

standby mode, the FPS enters burst-mode operation. As

the load decreases, the feedback voltage decreases. As

shown in Figure 33, the device automatically enters

burst-mode when the feedback voltage drops below

V_BURL(350mV). At this point, switching stops and the

output voltages start to drop at a rate dependent on

standby current load. This causes the feedback voltage

to rise. Once it passes V_BURH(550mV), switching

inductance shown at V_CCwinding coil.

resumes. The feedback voltage then falls and the

process repeats. Burst-mode operation alternately

enables and disables switching of the power SenseFET,

thereby reducing switching loss in standby mode.

V_{Vcc_coil}&V_CC

FSQ0765R Rev.00

Absolue max V_CC(20V)

V_CC

V_{Vcc_coil}

V_O

set

V_O

V_FB

N

pri

V_DC

N_Vcc

0.55V

0.35V

Improper OVP triggering

V_OVP(8V)

V_sync

I_DS

V_SH2(4.8V)

t_OVP

V_CLAMP

V_DS

Figure 32. OVP Triggering

time

4.5 Thermal Shutdown with Hysteresis (TSD): The

SenseFET and the control IC are built in one package.

This makes it easy for the control IC to detect the

abnormally high temperature of the SenseFET. If the

temperature exceeds approximately 140°C, the thermal

shutdown triggers IC shutdown. The IC recovers its

operation when the junction temperature decreases

60°C from TSD temperature and V_CCreaches start-up

Switching

disabled

Switching

disabled

t4

t2 t3

t1

FSQ0765R Rev.00

Figure 33. Waveforms of Burst Operation

7. Switching Frequency Limit: To minimize switching

loss and Electromagnetic Interference (EMI), the

MOSFET turns on when the drain voltage reaches its

minimum value in quasi-resonant operation. However,

this causes switching frequency to increases at light load

conditions. As the load decreases or input voltage

increases, the peak drain current diminishes and the

switching frequency increases. This results in severe

switching losses at light-load condition, as well as

intermittent switching and audible noise. These problems

create limitations for the quasi-resonant converter

topology in a wide range of applications.

voltage (V_start).

5. Soft-Start: The FPS has an internal soft-start circuit

that increases PWM comparator inverting input voltage

with the SenseFET current slowly after it starts up. The

typical soft-start time is 17.5ms. The pulse width to the

power switching device is progressively increased to

establish the correct working conditions for transformers,

inductors, and capacitors. The voltage on the output

capacitors is progressively increased with the intention of

smoothly establishing the required output voltage. This

mode helps prevent transformer saturation and reduces

stress on the secondary diode during start-up.

To overcome these problems, FSQ-series employs a

frequency-limit function, as shown in Figures 34 and 35.

Once the SenseFET is turned on, the next turn-on is

prohibited during the blanking time (t_B). After the

blanking time, the controller finds the valley within the

detection time window (t_W) and turns on the MOSFET, as

shown in Figures 34 and Figure 35 (Cases A, B, and C).

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

15

If no valley is found during t_W, the internal SenseFET is

forced to turn on at the end of t_W(Case D). Therefore,

8. AVS (Alternating Valley Switching): Due to the

quasi-resonant operation with limited frequency, the

switching frequency varies depending on input voltage,

load transition, and so on. At high input voltage, the

switching on time is relatively small compared to low

input voltage. The input voltage variance is small and the

switching frequency modulation width becomes small. To

improve the EMI performance, AVS is enabled when

input voltage is high and the switching on time is small.

the devices have a minimum switching frequency of

48kHz and a maximum switching frequency of 67kHz.

t_s^max=21μs

I_DS

A

B

Internally, quasi-resonant operation is divided into two

categories; one is first valley switching and the other is

second-valley switching after blanking time. In AVS, two

successive occurrences of first-valley switching and the

other two successive occurrences of second-valley

switching is alternatively selected to maximize frequency

modulation. As depicted in Figure 35, the switching

frequency hops when the input voltage is high. The

internal timing diagram of AVS is described in Figure 36.

t_B=15μs

t_s

I_DS

t_B=15μs

t_s

f_s

1

Assume the resonant period is 2μs

15μs

67kHz

1

59kHz

17μs

53kHz

48kHz

I_DS

1

19μs

AVS trigger point

C

Constant

frequency

1

Variable frequency within limited range

DCM

21μs

t_B=15μs

CCM

AVS region

t_s

D

C

B

A

I_DS

V_in

FSQ0765R Rev.00

D

Figure 35. Switching Frequency Range

t_B=15μs

t_W=6μs

t_s^max=21μs

FSQ0765R Rev. 00

Figure 34. QRC Operation with Limited Frequency

V_gate

V_gatecontinued 2 pulses

V_gatecontinued another 2 pulses

1st valley switching

2nd valley switching

1st valley switching

GateX2

fixed

fixed fixed

One-shot

AVS

triggering

de-triggering

1st or 2nd is depend on GateX2

triggering

1st or 2nd is dependent on GateX2

V_DS

t_B

GateX2: Counting V_gateevery 2 pulses independent on other signals.

FSQ0765R Rev. 00

1st valley- 2nd valley frequency modulation.

Modulation frequency is approximately 17kHz.

Figure 36. Alternating Valley Switching (AVS)

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

16

PCB Layout Guide

Due to the combined scheme, FPS shows better noise

immunity than conventional PWM controller and

MOSFET discrete solution. Further more, internal drain

current sense eliminates the possibility of noise

generation caused by a sensing resistor. There are some

recommendations for PCB layout to enhance noise

immunity and suppress natural noise inevitable in power-

handling components.

There are typically two grounds in the conventional

SMPS: power ground and signal ground. The power

ground is the ground for primary input voltage and

power, while the signal ground is ground for PWM

controller. In FPS, those two grounds share the same

pin, GND. Normally the separate grounds do not share

the same trace and meet only at one point, the GND pin.

More, wider patterns for both grounds are good for large

currents by decreasing resistance.

Capacitors at the VCC and FB pins should be as close

as possible to the corresponding pins to avoid noise from

the switching device. Sometimes Mylar® or ceramic

capacitors with electrolytic for V_CCis better for smooth

operation. The ground of these capacitors needs to

connect to the signal ground (not power ground).

Figure 37. Recommended PCB Layout

The cathode of the snubber diode should be close to the

drain pin to minimize stray inductance. The Y-capacitor

between primary and secondary should be directly

connected to the power ground of DC link to maximize

surge immunity.

Because the voltage range of feedback and sync line is

small, it is affected by the noise of the drain pin. Those

traces should not draw across or close to the drain line.

When the heat sink is connected to the ground, it should

be connected to the power ground. If possible, avoid

using jumper wires for power ground and drain.

Mylar® is a registered trademark of DuPont Teijin Films.

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

17

Typical Application Circuit

Input Voltage

Range

Output Voltage

(Maximum Current)

Application

FPS™ Device

Rated Output Power

LCD Monitor

Power Supply

5.1V (2.0A)

12V (3.0A)

FSQ0565R

85-265V_AC

46W

Features

Average efficiency of 25%, 50%, 75%, and 100% load conditions is higher than 80% at universal input

Low standby mode power consumption (<1W at 230V_ACinput and 0.5W load)

Reduce EMI noise through valley switching operation

Enhanced system reliability through various protection functions

Internal soft-start (17.5ms)

Key Design Notes

The delay time for overload protection is designed to be about 23ms with C105 of 33nF. If faster/slower triggering of

OLP is required, C105 can be changed to a smaller/larger value (e.g. 100nF for 70ms).

The input voltage of V_Syncmust be between 4.7V and 8V just after MOSFET turn-off to guarantee hybrid control and

to avoid OVP triggering during normal operation.

The SMD-type 100nF capacitor must be placed as close as possible to V_CCpin to avoid malfunction by abrupt pul-

sating noises and to improve surge immunity.

1. Schematic

L201

5μH

FSQ0765R Rev.00

D201

MBRF10H100

T1

EER3016

12V, 3A

10

1

2

C202

1000μF

25V

C201

1000μF

25V

C104

4.7nF

630V

R103

33kΩ

1W

R102

68kΩ

8

R104

20Ω

0.5W

D101

1N 4007

C103

100μF

400V

3

2

BD101

FSQ0565R

2KBP06M3N257

6

1

3

V_str

Drain

R105

100Ω

0.5W

C106 C107

100nF 47μF

SMD 50V

L202

5μH

5

D202

MBRF1060

Sync

Vcc

5V, 2A

4

3

Vfb

4

7

4

GND

D102

UF 4004

C204

1000μF

10V

C203

1000μF

10V

C105

33nF

100V

C102

150nF

275VAC

R107

18kΩ

2

6

5

ZD101

1N4745A

C301

4.7nF

1kV

LF101

34mH

R108

12kΩ

R201

1kΩ

R101

2MΩ

1W

R204

4kΩ

R202

1.2kΩ

C205

47nF

R203

1.2kΩ

Optional components

IC301

FOD817A

IC201

KA431

C101

150nF

275VAC

RT1

5D-9

R205

4kΩ

F1

FUSE

250V

2A

Figure 38. Demo Circuit of FSQ0565R

FSQ0565R, FSQ0765R Rev. 1.0.1

www.fairchildsemi.com

18

2. Transformer

FSQ0765R Rev.00

TAPE 4T

TAPE 1T

TAPE 2T

EER3016

1

2

1

10

9

N

_12V/2

Lp/2

(0.4φ)

L12V/2

(TIW 0.5φ,

2parallel)

9

8

9

8

2

3

4

5

N_12V/2

TAPE 2T

N_p/2

N_a

LVcc(0.2φ)

4

5

L5V

(TIW 0.5φ,

2parallel)

7

6

9

8

TAPE 2T

L12V/2

(TIW 0.5φ,

2parallel)

10 10

TAPE 2T

TAPE 1T

7

2

N_5V

Lp/2

3

(0.4φ)

6

Bottom of bobbin

Figure 39. Transformer Schematic Diagram of FSQ0565R

3. Winding Specification

Position

No

Insulation: Polyester Tape t = 0.025mm, 4 Layers

N_p/2 2 → 1 0.4φ × 1