FSYC163R3 [FAIRCHILD]

Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN;
FSYC163R3
型号: FSYC163R3
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

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文件: 总8页 (文件大小:108K)
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FSYC163R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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12 INTERSIL

FSYC163R4

Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

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0 FAIRCHILD

FSYC260D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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19 INTERSIL

FSYC260D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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7 INTERSIL

FSYC260D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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10 INTERSIL

FSYC260R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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13 INTERSIL

FSYC260R1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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14 INTERSIL

FSYC260R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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7 INTERSIL

FSYC260R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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12 INTERSIL

FSYC264D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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11 INTERSIL

FSYC264D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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10 INTERSIL

FSYC264D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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7 INTERSIL

FSYC264R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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11 INTERSIL

FSYC264R1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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10 INTERSIL

FSYC264R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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17 INTERSIL