FZT649L99Z [FAIRCHILD]
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin;
| 型号： | FZT649L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin |
| 文件： | 总3页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete Power & Signal
Technologies
July 1998
FZT649
E
B
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FZT649
Symbol
Parameter
Units
Collector-Emitter Voltage
25
V
VCEO
Collector-Base Voltage
Emitter-Base Voltage
35
5
V
V
VCBO
VEBO
Collector Current - Continuous
3
A
IC
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FZT649
Total Device Dissipation
Thermal Resistance, Junction to Ambient
2
W
PD
62.5
°C/W
RqJA
Page 1 of 2
ã
1998 Fairchild Semiconductor Corporation
fzt649.lwpPrNC 7/10/98 revB
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
25
35
5
V
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 100 mA
IE = 100 mA
100
10
nA
uA
VCB = 30 V
VCB = 30 V, TA=100°C
Emitter Cutoff Current
100
nA
IEBO
VEB = 4V
ON CHARACTERISTICS*
DC Current Gain
hFE
70
100
75
-
IC = 50 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 6 A, VCE = 2 V
300
15
Collector-Emitter Saturation Voltage
300
600
mV
VCE(sat)
IC = 1 A, IB = 100 mA
IC = 3 A, IB = 300 mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
1.25
1
V
V
VBE(sat)
VBE(on)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
50
pF
-
VCB = 10 V, IE = 0, f = 1MHz
Transition Frequency
fT
150
IC = 100 mA,VCE = 5 V, f=100MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Page 2 of 2
ã
1998 Fairchild Semiconductor Corporation
fzt649.lwpPrNC 7/10/98 revB
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
QFET™
QS™
QT Optoelectronics™
VCX™
FASTr™
ACEx™
GlobalOptoisolator™
GTO™
HiSeC™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
FACT Quiet Series™
FAST®
PowerTrench®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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