H11A617DSD_NF098 [FAIRCHILD]
Transistor Output Optocoupler, 1-Element, 5000V Isolation, SURFACE MOUNT, DIP4;型号: | H11A617DSD_NF098 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Transistor Output Optocoupler, 1-Element, 5000V Isolation, SURFACE MOUNT, DIP4 输出元件 光电 |
文件: | 总11页 (文件大小:527K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
July 2006
H11AA814 Series, H11A617 Series, H11A817 Series
4-Pin Phototransistor Optocouplers
tm
Features
Applications
■ AC input response (H11AA814 only)
■ Compatible to Pb-free IR reflow soldering
■ Compact 4-pin dual in-line package
■ Current transfer ratio in selected groups:
H11AA814 Series
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
H11AA814: 20-300%
H11AA814A: 50-150%
H11A617A: 40%-80%
H11A617B: 63%-125%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
H11A817:
50-600%
H11A617 and H11A817 Series
■ Power supply regulators
H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
■ Digital logic inputs
■ Microprocessor inputs
Description
■ C-UL, UL and VDE approved
The H11AA814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The H11A617/817 Series consists of a gallium
■ High input-output isolation voltage of 5000Vrms
■ Minimum BV
of 70V guaranteed
CEO
arsenide infrared emitting diode driving
phototransistor in a 4-pin dual in-line package.
a silicon
Package
Schematics
H11AA814
4
ANODE, CATHODE
CATHODE, ANODE
1
2
4
COLLECTOR
1
3 EMITTER
H11A617 & H11A817
1
2
4
COLLECTOR
ANODE
CATHODE
3 EMITTER
©2005 Fairchild Semiconductor Corporation
1
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Absolute Maximum Ratings (T = 25°C Unless otherwise specified.)
A
Symbol
Parameter
Device*
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
200
°C
°C
STG
T
Operating Temperature
OPR
T
Lead Solder Temperature
°C
SOL
P
Total Device Power Dissipation (-55°C to 50°C)
mW
D
EMITTER
I
Continuous Forward Current
Reverse Voltage
814 Series
617, 817 Series
50
50
mA
V
F
V
P
617 Series
817 Series
6
6
R
D
LED Power Dissipation (25°C ambient)
No derating up to 100°C
All
70
mW
DETECTOR
V
V
Collector-Emitter Voltage
Emitter-Collector Voltage
All
70
V
V
CEO
ECO
814, 817 Series
617 Series
6
7
I
Continuous Collector Current
All
All
50
150
2.9
mA
mW
C
P
Detector Power Dissipation (25°C ambient)
Derate above 90°C
D
mW/°C
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol Parameter
EMITTER
Test Conditions
Device
Min. Typ.* Max. Unit
V
Input Forward Voltage I = 60mA
617 Series
817 Series
814 Series
617 Series
817 Series
1.35
1.2
1.65
1.5
1.5
10
V
F
F
I = 20mA
F
I = 20mA
1.2
F
I
Reverse Leakage
Current
V
V
= 6.0V
= 5.0V
.001
µA
R
R
R
DETECTOR
BV
Collector-Emitter
Breakdown Voltage
I
= 0.1 mA, I = 0
ALL
70
100
V
V
CEO
C
F
BV
Emitter-Collector
Breakdown Voltage
I = 10 µA, I = 0
814, 817 Series
617 Series
6
7
10
10
1
ECO
E
F
I
Collector-Emitter
Dark Current
V
= 10V, I = 0
H11AA814/A, 817 Series,
H11A617C/D
100
50
nA
CEO
CE
F
H11A617A/B
*Typical values at T =25°C
A
2
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Transfer Characteristics (T = 25°C Unless otherwise specified.)
A
Symbol DC Characteristic
Test Conditions
Device
H11AA814
H11AA814A
H11A617A
H11A617B
H11A617C
H11A617D
H11A817
Min Typ* Max Unit
(1)
CTR
Current Transfer
Ratio
I = 1mA, V = 5V
20
50
300
150
80
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
V
F
CE
(1)
I = 1mA, V = 5V
F
CE
(1)
(I = 10mA, V = 5V
40
F
CE
63
125
200
320
600
160
260
400
600
100
160
50
(1)
(I = 5mA, V = 5V
F
CE
H11A817A
H11A817B
H11A817C
H11A817D
H11A617A
H11A617B
H11A617C
H11A617D
814 series
617 series
817 series
80
130
200
300
13
(1)
I = 1mA, V = 5V
F
CE
22
34
56
V
Collector-Emitter
Saturation Voltage
I = 1mA, I = 20mA
0.2
0.4
0.2
CE (SAT)
C
F
I = 2.5mA, I = 10mA
C
F
I = 1mA, I = 20mA
C
F
AC CHARACTERISTIC
(2)
(2)
t
Rise Time
Fall Time
I = 2mA, V = 2 V, R = 100Ω
ALL
ALL
4
3
18
18
µs
µs
r
C
CE
L
t
I = 2mA, V = 2 V, R = 100Ω
C CE L
f
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
V
Input-Output Isolation Voltage
(note 3)
(f = 60Hz, t = 1 min)
5000
Vac(rms)
ISO
(I ≤ 2µA)
I-O
10
11
R
C
Isolation Resistance
Isolation Capacitance
(V = 500 VDC)
5x10
10
Ω
ISO
I-O
(V = 0, f = 1 MHz)
0.6
1.0
pf
ISO
I-O
*Typical values at T = 25°C.
A
Notes:
1. Current Transfer Ratio (CTR) = I /I x 100%.
C F
2. For test circuit setup and waveforms, refer to Figure 13.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
3
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Typical Performance Curves
Fig. 2. Relative Current Transfer Ratio
vs. Ambient Temperature
Fig. 1 Current Transfer Ratio
vs. Forward Current
160
140
120
200
180
160
140
V
= 5V
CE
Ta = 25°C
H11AA814
I
V
= 1mA
F
= 5V
CE
100
80
120
I
V
= 5mA
F
= 5V
CE
814
100
617
H11AA617 & H11AA817
817
80
60
40
20
0
60
40
20
0
1
2
5
10
20
50
-60
-40
-20
0
20
40
60
80
100
FORWARD CURRENT I (mA)
F
AMBIENT TEMPERATURE T (°C)
A
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 4 Forward Current vs. Forward Voltage
100
10
1
0.12
0.10
0.08
0.06
0.04
0.02
0.00
I
I
= 20 mA
= 1 mA
F
C
TA =100°C
75°C
50°C
25°C
0°C
-30°C
-55°C
0.1
0.5
1.0
1.5
2.0
-60
-40
-20
0
20
40
60
80
100
FORWARD VOLTAGE V (V)
T
- AMBIENT TEMPERATURE (˚C)
F
A
Fig. 5 Collector Current vs.
Collector-Emitter Voltage (H11AA814)
Fig. 6 Collector Current vs. Collector-Emitter Voltage
(H11AA617 and H11AA817)
30
25
20
15
10
5
50
40
30
20
10
0
Ta
=
25°C
I
IF = 30mA
Ta = 25°C
I
= 30 mA
F
20mA
Pc(MAX.)
20mA
Pc (Max)
10mA
10mA
5mA
5mA
1mA
0
0
1
2
3
4
5
6
7
8
9
0
10
20
30
40
50
60
70
80
90
100
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR-EMITTER VOLTAGE V (V)
CE
4
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Typical Performance Curves (Continued)
Fig. 7 Collector Dark Current vs Ambient Temperature
Fig. 8 Response Time vs. Load Resistance
10000
500
200
100
50
20
10
5
V
= 2V
CE
V
= 20V
CE
I
= 2mA
C
1000
100
10
Ta = 25°C
tr
tf
td
1
ts
2
1
0.1
0.01
0.5
0.2
-60
-40
-20
0
20
40
60
80
100
0.05
0.1
0.2
0.5
1
2
5
10
AMBIENT TEMPERATURE T (°C)
LOAD RESISTANCE R (kW)
A
L
Fig. 9. Frequency Response (H11AA814)
Fig. 10. Frequency Response (H11AA617 and H11AA817)
V
= 2V
CE
= 2mA
V
I
= 2V
CE
I
C
= 2mA
Ta = 25°C
C
Ta = 25°C
0
0
10
20
1kΩ
100Ω
R = 10kΩ
L
R =10kΩ
L
1kΩ
100Ω
-10
-20
0.2
0.5
1
2
5
10
20
50 100
500
0.5
15
2
10
100
1000
FREQUENCY f (kHz)
FREQUENCY f (kHz)
Fig. 12. Collector Power Dissipation
vs. Ambient Temperature
Fig. 11. LED Power Dissipation vs. Ambient Temperature
100
80
60
40
20
0
200
150
100
50
0
-55
-40
-20
0
20
40
60
80
100
120
-55
-40
-20
0
20
40
60
80
100
120
AMBIENT TEMPERATURE T (°C)
A
AMBIENT TEMPERATURE T (°C)
A
5
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Test Circuit
Figure 13.Test Circuit
Test Circuit for Response Time
Input
Vcc
Output
10%
90%
RL
RD
Output
Input
td
ts
tr
tf
Test Circuit for Frequency Response
Vcc
RL
RD
Output
6
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Package Dimensions
Through Hole
Surface Mount
0.312 (7.92)
0.288 (7.32)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
0.200 (5.10)
0.161 (4.10)
0.200 (5.10)
0.161 (4.10)
0.276 (7.00)
0.236 (6.00)
0.157 (4.00)
0.118 (3.00)
0.157 (4.00)
0.118 (3.00)
0.010 (0.26)
0.051 (1.30)
0.043 (1.10)
0.049 (1.25)
0.030 (0.76)
0.130 (3.30)
0.020 (0.51)
0.091 (2.30)
TYP
0.024 (0.60)
0.004 (0.10)
0.412 (10.46)
0.388 (9.86)
0.010 (0.26)
0.150 (3.80)
0.110 (2.80)
0.110 (2.79)
0.090 (2.29)
0.300 (7.62)
typ
Lead Coplanarity 0.004 (0.10) MAX
0.024 (0.60)
0.016 (0.40)
0.110 (2.79)
0.090 (2.29)
0.4” Lead Spacing
0.200 (5.10)
Footprint Dimensions (Surface Mount)
Footprint Dimensions
0.312 (7.92)
0.288 (7.32)
(Surface Mount)
1.5
0.157 (4.00)
0.161 (4.10)
0.276 (7.00)
0.236 (6.00)
0.118 (3.00)
1.3
0.291 (7.40)
0.252 (6.40)
0.130 (3.30)
0.091 (2.30)
9
0.110 (2.80)
0.011 (1.80)
0.150 (3.80)
0.110 (2.80)
0.010 (0.26)
0.110 (2.79)
0.090 (2.29)
0.024 (0.60)
0.016 (0.40)
0.42 (10.66)
0.38 (9.66)
2.54
Note:
All dimensions are in inches (millimeters)
7
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Ordering Information
Part Number Example
Description
H11AA814S
Surface Mount Lead Bend
H11AA814SD
H11AA814W
H11AA814300
H11AA814300W
H11AA8143S
H11AA8143SD
Surface Mount; Tape and reel
0.4" Lead Spacing
VDE Approved
VDE Approved, 0.4" Lead Spacing
VDE Approved, Surface Mount
VDE Approved, Surface Mount, Tape & Reel
*To specify the new construction version which needs 260°C max reflow peak temperature rating: add “NF098” to the
end of the part number. The non-NF098 version is rated for 260°C peak reflow temperature only for parts marked with
date code 0550 and later.
Marking Information
4
5
6
V X ZZ Y
814
3
2
1
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
8
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Carrier Tape Specifications
P
P
0
2
Ø1.55 0.05
1.75 0.1
F
W
B0
A0
P
1
0.3 0.05
K0
Note:
All dimensions are in millimeters
Description
Tape wide
Symbol
Dimensions in mm (inches)
W
16 0.3 (.63)
Pitch of sprocket holes
Distance of compartment
P
4
0.1 (.15)
7.5 0.1 (.295)
0.1 (.079)
0
F
P
2
2
Distance of compartment to compartment
Compartment
P
12 0.1 (.472)
10.45 0.1 (.411)
5.30 0.1 (.209)
4.25 0.1 (.167)
1
A0
B0
K0
9
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Lead Free Recommended IR Reflow Condition
Tp
Tsmax
Tsmin
Ramp-down
25°C
Soldering zon
ts (Preheat)
Time (sec)
Profile Feature
Pb-Sn solder assembly
Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone
183°C
217°C
60 ~ 120 sec
30 ~ 90 sec
Peak temperature (Tp)
Ramp-down rate
240 +0/-5°C
260 +0/-5°C
6°C/sec max.
6°C/sec max.
Recommended Wave Soldering condition
Profile Feature
For all solder assembly
Peak temperature (Tp)
Max 260°C for 10 sec
10
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
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PowerSaver™
SILENT SWITCHER
SMART START™
SPM™
UniFET™
UltraFET
VCX™
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
®
HiSeC™
Stealth™
Wire™
2
I C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
EcoSPARK™
2
E CMOS™
®
EnSigna™
FACT™
PowerTrench
®
QFET
®
FAST
QS™
FASTr™
FPS™
FRFET™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TinyPWM™
TinyPower™
®
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
11
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
相关型号:
H11A617DS_NF098
Transistor Output Optocoupler, 1-Element, 5000V Isolation, SURFACE MOUNT, DIP4
FAIRCHILD
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