H11AV1ASR2M_技术文档

September 2009

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM

Phototransistor Optocouplers

Features

Description

■ H11AV1M and H11AV2M feature 0.3" input-output

The general purpose optocouplers consist of a gallium

arsenide infrared emitting diode driving silicon

lead spacing

a

phototransistor in a 6-pin dual in-line white package.

■ H11AV1AM and H11AV2AM feature 0.4" input-output

lead spacing

■ UL recognized (File #E90700, Vol. 2)

■ VDE recognized (File #102497)

■ Add option V (e.g., H11AV1AVM)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

Schematic

Package Outlines

1

2

3

6

5

4

ANODE

CATHODE

N/C

BASE

COLLECTOR

EMITTER

H11AV1SM, H11AV2SM

H11AV1M, H11AV2M

H11AV1AM, H11AV2AM

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

Absolute Maximum Ratings ^(T= 25°C unless otherwise specified.)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Value

Units

TOTAL DEVICE

T

Storage Temperature

Operating Temperature

-40 to +150

-40 to +100

260 for 10 sec

250

°C

STG

T

OPR

T

Wave Solder Temperature (see page 8 for reﬂow solder proﬁles)

°C

SOL

P

Total Device Power Dissipation @ T = 25°C

mW

mW/°C

D

A

Derate above 25°C

2.94

EMITTER

I

DC / Average Forward Input Current

Reverse Input Voltage

60

6

mA

V

F

V

P

R

D

LED Power Dissipation @ T = 25°C

120

1.41

mW

A

Derate above 25°C

mW/°C

DETECTOR

V

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Collector Voltage

70

V

CEO

CBO

ECO

7

V

P

Detector Power Dissipation @ T = 25°C

150

1.76

mW

mW/°C

D

A

Derate above 25°C

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

2

Electrical Characteristics ^{(T = 25°C unless otherwise speciﬁed.)}

A

Individual Component Characteristics

Symbol

EMITTER

Parameter

Test Conditions

Min.

Typ.* Max. Unit

V

Input Forward Voltage (I = 10mA)

T = 25°C

0.8

0.9

0.7

1.18

1.28

1.05

1.5

1.7

1.4

10

V

F

A

T = -55°C

A

T = 100°C

A

I

Reverse Leakage Current

V = 6.0V

µA

R

DETECTOR

BV

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Dark Current

Collector-Base Dark Current

Capacitance

I = 1.0mA, I = 0

70

7

100

120

10

1

V

CEO

CBO

ECO

C

F

I = 100µA, I = 0

C

F

I = 100µA, I = 0

V

E

F

I

V

= 10V, I = 0

50

nA

pF

CEO

CBO

CE

CB

CE

F

V

= 10V

0.5

8

C

= 0V, f = 1MHz

CE

Transfer Characteristics

Symbol Parameter

Test Conditions

Device

Min. Typ.* Max. Unit

DC CHARACTERISTIC

CTR

Current Transfer Ratio, I = 10mA, V = 10V

Collector to Emitter

H11AV1M

H11AV1AM

100

50

300

%

F

CE

H11AV2M

H11AV2AM

V

Collector-Emitter

Saturation Voltage

I = 2mA, I = 20mA

All

0.4

V

CE (SAT)

C

F

AC CHARACTERISTIC

Non-Saturated Turn-on I = 2mA, V = 10V,

T

All

15

µs

ON

C

CC

Time

R = 100Ω (Fig. 11)

L

T

Non Saturated Turn-off I = 2mA, V = 10V,

ON

C

CC

Time

R = 100Ω (Fig. 11)

L

Isolation Characteristics

Symbol Parameters

Test Conditions

Min.

Typ.*

Max.

Units

V

C

R

Input-Output Isolation Voltage

Isolation Capacitance

f = 60Hz, t = 1 sec.

7500

V

AC(pk)

ISO

V

= 0V, f = 1MHz

= 500 VDC

0.2

2

pF

I-O

11

Isolation Resistance

10

Ω

*Typical values at T = 25°C

A

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

3

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Installation Classiﬁcations per DIN VDE 0110/1.89

Table 1

For Rated Main Voltage < 150Vrms

For Rated Main voltage < 300Vrms

Climatic Classiﬁcation

I-IV

55/100/21

2

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

CTI

175

V

Input to Output Test Voltage, Method b,

1594

V

PR

peak

V

x 1.875 = V , 100% Production Test

IORM

PR

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

1275

peak

V

x 1.5 = V , Type and Sample Test

PR

IORM

with tm = 60 sec, Partial Discharge < 5pC

Max. Working Insulation Voltage

Highest Allowable Over Voltage

External Creepage

V

850

6000

7

V

IORM

peak

V

IOTM

peak

mm

Ω

External Clearance

7

Insulation Thickness

0.5

9

RIO

Insulation Resistance at Ts, V = 500V

10

IO

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

4

Typical Performance Curves

Fig. 1 LED Forward Voltage vs. Forward Current

Fig. 2 Normalized CTR vs. Forward Current

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

V

= 5.0V

= 25°C

Normalized to

I = 10mA

F

CE

T

A

T

= -55°C

= 25°C

= 100°C

A

1

10

– LED FORWARD CURRENT (mA)

100

0

2

4

6

8

10

I – FORWARD CURRENT (mA)

F

12

14

16

18

20

I

F

Fig. 4 CTR vs. RBE (Unsaturated)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

I

= 20mA

F

I

= 5mA

F

I

= 10mA

F

I

= 5mA

F

I

= 10mA

F

I

= 20mA

F

V

CE

= 5.0V

Normalized to

= 10mA

I

F

T

= 25°C

A

10

100

1000

-60

-40

-20

0

20

40

60

80

100

R

BE

– BASE RESISTANCE (kΩ)

T

– AMBIENT TEMPERATURE (°C)

A

Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current

Fig. 5 CTR vs. RBE (Saturated)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

100

I

= 20mA

V

= 0.3 V

F

CE

T

= 25˚C

A

10

1

I

= 5mA

F

I

= 2.5mA

F

I

= 10mA

F

0.1

I

= 20mA

F

0.01

0.001

I

= 5mA

F

I

= 10mA

F

10

100

- BASE RESISTANCE (kΩ)

1000

0.01

0.1

1

10

R

BE

I

- COLLECTOR CURRENT (mA)

C

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

5

Typical Performance Curves ^(Continued)

Fig. 7 Switching Speed vs. Load Resistor

Fig. 8 Normalized t vs. R

on

BE

1000

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

I

V

T

= 10 mA

V

10V

F

CC =

I = 2mA

C

= 10 V

CC

= 25°C

R = 100Ω

L

A

100

10

1

T

off

T

f

T

on

T

r

0.1

10

100

1000

10000

100000

0.1

1

10

100

R – LOAD RESISTOR (kΩ)

R

BE

– BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

10000

1000

100

10

Fig. 9 Normalized t vs. R

off

BE

V

T

= 10 V

CE

A

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

= 25°

C

1

V

I

R

10V

CC =

= 2mA

0.1

C

= 100Ω

L

0.01

0.001

10

100

R

1000

10000

100000

0

20

40

– AMBIENT TEMPERATURE (°C)

A

60

80

100

– BASE RESISTANCE (k Ω)

T

BE

WAVE FORMS

TEST CIRCUIT

V

_CC= 10V

INPUT PULSE

I_C

I_F

R_L

10%

90%

INPUT

OUTPUT

OUTPUT PULSE

R_BE

t_r

t_f

t_off

t_on

I_{F to produce}I_{C = 2 mA}

Adjust

Figure 11. Switching Time Test Circuit and Waveforms

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

6

Package Dimensions

Through Hole

0.4" Lead Spacing

8.13–8.89

6

4

8.13–8.89

6

4

6.10–6.60

Pin 1

1

3

Pin 1

1

3

5.08 (Max.)

3.28–3.53

0.25–0.36

7.62 (Typ.)

5.08 (Max.)

3.28–3.53

0.25–0.36

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.20–0.30

(0.86)

15° (Typ.)

(0.86)

0.41–0.51

0.76–1.14

0.20–0.30

10.16–10.80

1.02–1.78

0.41–0.51

0.76–1.14

1.02–1.78

Surface Mount

(1.78)

8.13–8.89

6

4

(1.52)

(2.54)

(7.49)

6.10–6.60

8.43–9.90

(10.54)

1

3

(0.76)

Pin 1

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.20–0.30

0.38 (Min.)

0.16–0.88

(8.13)

2.54 (Bsc)

(0.86)

0.41–0.51

0.76–1.14

1.02–1.78

Note:

All dimensions in mm.

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

7

Ordering Information

Order Entry Identiﬁer

(Example)

Option

Description

No option

H11AV1M

H11AV1SM

Standard Through Hole Device

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

S

SR2

T

H11AV1SR2M

H11AV1TM

V

H11AV1VM

VDE 0884

TV

H11AV1TVM

H11AV1SVM

H11AV1SR2VM

VDE 0884, 0.4" Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape and Reel

SV

SR2V

Marking Information

1

2

H11AV1

X YY Q

6

V

5

3

4

Deﬁnitions

1

2

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

3

4

5

6

One digit year code, e.g., ‘3’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are

marked with date code ‘325’ or earlier are marked in portrait format.

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

8

Tape Dimensions

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

4.0 ± 0.1

0.30 ± 0.05

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

0.1 MAX

User Direction of Feed

Note:

All dimensions are in millimeters.

Reflow Soldering Profile

300

280

260

240

220

200

180

260°C

>245°C = 42 Sec

Time above

160

°C

183°C = 90 Sec

140

120

100

80

1.822°C/Sec Ramp up rate

60

40

33 Sec

20

0

60

120

180

270

360

Time (s)

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

9

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

PowerTrench^®

PowerXS™

The Power Franchise^®

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

EZSWITCH™*

™*

F-PFS™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Programmable Active Droop™

QFET^®

TinyBoost™

TinyBuck™

QS™

Quiet Series™

RapidConfigure™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

SMART START™

SPM^®

®

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR^®

FAST^®

®

FastvCore™

FETBench™

PDP SPM™

Power-SPM™

Sync-Lock™

FlashWriter^®

®

*

FPS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Advance Information

Preliminary

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

First Production

Full Production

Not In Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

No Identification Needed

Obsolete

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I40

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

www.fairchildsemi.com

10


型号：	H11AV1ASR2M
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6
文件：	总10页 (文件大小：261K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

H11AV1ASR2M [FAIRCHILD]

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