H11AV2SR2-M [FAIRCHILD]
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6;型号: | H11AV2SR2-M |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6 输出元件 |
文件: | 总10页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
September 2009
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM
Phototransistor Optocouplers
Features
Description
■ H11AV1M and H11AV2M feature 0.3" input-output
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving silicon
lead spacing
a
phototransistor in a 6-pin dual in-line white package.
■ H11AV1AM and H11AV2AM feature 0.4" input-output
lead spacing
■ UL recognized (File #E90700, Vol. 2)
■ VDE recognized (File #102497)
■ Add option V (e.g., H11AV1AVM)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Schematic
Package Outlines
1
2
3
6
5
4
ANODE
CATHODE
N/C
BASE
COLLECTOR
EMITTER
H11AV1SM, H11AV2SM
H11AV1M, H11AV2M
H11AV1AM, H11AV2AM
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C unless otherwise specified.)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Wave Solder Temperature (see page 8 for reflow solder profiles)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
2.94
EMITTER
I
DC / Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
P
R
D
LED Power Dissipation @ T = 25°C
120
1.41
mW
A
Derate above 25°C
mW/°C
DETECTOR
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
70
70
V
V
CEO
CBO
ECO
7
V
P
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
D
A
Derate above 25°C
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.* Max. Unit
V
Input Forward Voltage (I = 10mA)
T = 25°C
0.8
0.9
0.7
1.18
1.28
1.05
1.5
1.7
1.4
10
V
F
F
A
T = -55°C
A
T = 100°C
A
I
Reverse Leakage Current
V = 6.0V
µA
R
R
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I = 1.0mA, I = 0
70
70
7
100
120
10
1
V
V
CEO
CBO
ECO
C
F
I = 100µA, I = 0
C
F
I = 100µA, I = 0
V
E
F
I
I
V
= 10V, I = 0
50
nA
nA
pF
CEO
CBO
CE
CB
CE
F
V
V
= 10V
0.5
8
C
= 0V, f = 1MHz
CE
Transfer Characteristics
Symbol Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
DC CHARACTERISTIC
CTR
Current Transfer Ratio, I = 10mA, V = 10V
Collector to Emitter
H11AV1M
H11AV1AM
100
50
300
%
F
CE
H11AV2M
H11AV2AM
V
Collector-Emitter
Saturation Voltage
I = 2mA, I = 20mA
All
0.4
V
CE (SAT)
C
F
AC CHARACTERISTIC
Non-Saturated Turn-on I = 2mA, V = 10V,
T
All
All
15
15
µs
µs
ON
C
CC
Time
R = 100Ω (Fig. 11)
L
T
Non Saturated Turn-off I = 2mA, V = 10V,
ON
C
CC
Time
R = 100Ω (Fig. 11)
L
Isolation Characteristics
Symbol Parameters
Test Conditions
Min.
Typ.*
Max.
Units
V
C
R
Input-Output Isolation Voltage
Isolation Capacitance
f = 60Hz, t = 1 sec.
7500
V
AC(pk)
ISO
ISO
ISO
V
V
= 0V, f = 1MHz
= 500 VDC
0.2
2
pF
I-O
I-O
11
Isolation Resistance
10
Ω
*Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
3
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
V
V
PR
peak
V
x 1.875 = V , 100% Production Test
IORM
PR
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
1275
peak
V
x 1.5 = V , Type and Sample Test
PR
IORM
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
4
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
Fig. 2 Normalized CTR vs. Forward Current
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
V
= 5.0V
= 25°C
Normalized to
I = 10mA
F
CE
T
A
T
T
T
= -55°C
= 25°C
= 100°C
A
A
A
1
10
– LED FORWARD CURRENT (mA)
100
0
2
4
6
8
10
I – FORWARD CURRENT (mA)
F
12
14
16
18
20
I
F
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20mA
F
I
= 5mA
F
I
= 10mA
F
I
= 5mA
F
I
= 10mA
F
I
= 20mA
F
V
CE
= 5.0V
Normalized to
= 10mA
I
F
T
= 25°C
A
10
100
1000
-60
-40
-20
0
20
40
60
80
100
R
BE
– BASE RESISTANCE (kΩ)
T
– AMBIENT TEMPERATURE (°C)
A
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
Fig. 5 CTR vs. RBE (Saturated)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
I
= 20mA
V
= 0.3 V
F
CE
T
= 25˚C
A
10
1
I
= 5mA
F
I
= 2.5mA
F
I
= 10mA
F
0.1
I
= 20mA
F
0.01
0.001
I
= 5mA
F
I
= 10mA
F
10
100
- BASE RESISTANCE (kΩ)
1000
0.01
0.1
1
10
R
BE
I
- COLLECTOR CURRENT (mA)
C
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized t vs. R
on
BE
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
V
10V
F
CC =
I = 2mA
C
= 10 V
CC
= 25°C
R = 100Ω
L
A
100
10
1
T
off
T
f
T
on
T
r
0.1
10
100
1000
10000
100000
0.1
1
10
100
R – LOAD RESISTOR (kΩ)
R
BE
– BASE RESISTANCE (k Ω)
Fig. 10 Dark Current vs. Ambient Temperature
10000
1000
100
10
Fig. 9 Normalized t vs. R
off
BE
V
T
= 10 V
CE
A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
= 25°
C
1
V
I
R
10V
CC =
= 2mA
0.1
C
= 100Ω
L
0.01
0.001
10
100
R
1000
10000
100000
0
20
40
– AMBIENT TEMPERATURE (°C)
A
60
80
100
– BASE RESISTANCE (k Ω)
T
BE
WAVE FORMS
TEST CIRCUIT
V
CC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
IF to produce IC = 2 mA
Adjust
Figure 11. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
6
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
7
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
H11AV1M
H11AV1SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
H11AV1SR2M
H11AV1TM
V
H11AV1VM
VDE 0884
TV
H11AV1TVM
H11AV1SVM
H11AV1SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
H11AV1
X YY Q
6
V
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘3’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
8
Tape Dimensions
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
4.0 ± 0.1
0.30 ± 0.05
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
300
280
260
240
220
200
180
260°C
>245°C = 42 Sec
Time above
160
°C
183°C = 90 Sec
140
120
100
80
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
The Power Franchise®
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
FAST®
®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
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full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
10
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