H11D1M [FAIRCHILD]
High Voltage Phototransistor Optocouplers; 高压光电晶体管光耦合器
| 型号： | H11D1M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Phototransistor Optocouplers |
| 文件： | 总9页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2007
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M
High Voltage Phototransistor Optocouplers
tm
Features
General Description
■ High voltage:
The H11DXM, 4N38M and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BV
= 400V
CER
– H11D1M, H11D2M, BV
= 300V
CER
– H11D3M, BV
= 200V
CER
■ High isolation voltage:
– 7500 V peak, 1 second
AC
■ Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
Schematic
ANODE
CATHODE
N/C
1
6 BASE
COLLECTOR
2
3
5
4
EMITTER
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
-55 to +150
-40 to +100
260 for 10 sec
260
°C
°C
STG
T
Operating Temperature
OPR
T
Lead Solder Temperature (Wave Solder)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
3.5
Derate Above 25°C
EMITTER
(1)
I
All
All
All
All
80
6.0
3.0
mA
V
F
Forward DC Current
(1)
V
R
Reverse Input Voltage
(1)
I (pk)
A
F
Forward Current – Peak (1µs pulse, 300pps)
(1)
P
150
mW
D
LED Power Dissipation @ T = 25°C
A
1.41
mW/°C
Derate Above 25°C
DETECTOR
P
Power Dissipation @ T = 25°C
All
300
4.0
400
300
200
80
mW
mW/°C
V
D
A
Derate linearly above 25°C
(1)
V
Collector to Emitter Voltage
MOC8204M
H11D1M, H11D2M
H11D3M
CER
CBO
ECO
4N38M
(1)
V
Collector Base Voltage
MOC8204M
H11D1M, H11D2M
H11D3M
400
300
200
80
V
4N38M
(1)
V
Emitter to Collector Voltage
H11D1M, H11D2M,
H11D3M,
7
V
MOC8204M
I
Collector Current (Continuous)
All
100
mA
C
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.* Max. Unit
EMITTER
(2)
V
Forward Voltage
I = 10mA
All
All
1.15
-1.8
1.5
V
F
F
∆V
Forward Voltage
Temp. Coefficient
mV/°C
F
∆T
A
BV
Reverse Breakdown
Voltage
I
= 10µA
All
All
6
25
V
R
R
C
Junction Capacitance V = 0V, f = 1MHz
50
65
pF
pF
µA
J
F
V = 1V, f = 1MHz
F
I
Reverse Leakage
V
= 6V
R
All
0.05
10
R
(2)
Current
DETECTOR
BV
Breakdown Voltage
Collector to Emitter
R
= 1MΩ, I = 1.0mA, I = 0
MOC8204M
H11D1M/2M
H11D3M
4N38M
400
300
200
80
V
V
CER
BE
C
F
(2)
BV
BV
No RBE, I = 1.0mA
C
CEO
CBO
(2)
Collector to Base
I
= 100µA, I = 0
MOC8204M
H11D1M/2M
H11D3M
4N38M
400
300
200
80
C
F
BV
BV
Emitter to Base
I
I
= 100µA, I = 0
4N38M
7
V
EBO
E
E
F
Emitter to Collector
= 100µA, I = 0
All
7
10
V
ECO
F
I
Leakage Current
Collector to Emitter
V
V
V
V
V
V
= 300V, I = 0, T = 25°C
MOC8204M
100
250
100
250
100
250
50
nA
µA
nA
µA
nA
µA
nA
CER
CE
CE
CE
CE
CE
CE
F
A
(2)
= 300V, I = 0, T = 100°C
F
A
(R = 1MΩ)
BE
= 200V, I = 0, T = 25°C
H11D1M/2M
H11D3M
4N38M
F
A
= 200V, I = 0, T = 100°C
F
A
= 100V, I = 0, T = 25°C
F
A
= 100V, I = 0, T = 100°C
F
A
I
No R , V = 60V, I = 0,
BE CE F
CEO
T = 25°C
A
Transfer Characteristics (T = 25°C Unless otherwise specified.)
A
Symbol
EMITTER
CTR
Characteristics
Test Conditions
Device
Min. Typ.* Max. Units
Current Transfer
Ratio, Collector to
Emitter
I = 10mA, V = 10V,
H11D1M/2M/3M,
MOC8204M
2 (20)
2 (20)
mA (%)
V
F
R
CE
= 1MΩ
BE
I = 10mA, V = 10V
4N38M
F
CE
(2)
V
Saturation Voltage
I = 10mA, I = 0.5mA,
H11D1M/2M/3M,
MOC8204M
0.1
0.40
1.0
CE(SAT)
F
R
C
= 1MΩ
BE
I = 20mA, I = 4mA
4N38M
F
C
SWITCHING TIMES
Non-Saturated
V
= 10V, I = 2mA,
All
All
5
5
t
µs
µs
CE
CE
ON
Turn-on Time
R = 100Ω
L
t
Turn-off Time
OFF
*All Typical values at T = 25°C
A
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
3
DC Electrical Characteristics (T = 25°C unless otherwise specified.) (Continued)
A
Isolation Characteristics
Symbol
Characteristic
Isolation Voltage
Test Conditions
Device
All
Min.
Typ.*
Max.
Units
V
R
C
f = 60Hz, t = 1 sec.
7500
V
PEAK
ISO
ISO
ISO
AC
11
Isolation Resistance
Isolation Capacitance
V
= 500 VDC
All
10
Ω
I-O
f = 1MHz
All
0.2
pF
*All Typical values at T = 25°C
A
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
4
Typical Performance Curves
1.8
1.7
1.6
1.5
1.4
Normalized to:
= 10 V
V
CE
I
R
= 10 mA
F
6
= 10
Ω
10
1
BE
T
= 25˚C
A
I
I
= 50 mA
= 10 mA
F
F
T
T
= 55˚C
= 25˚C
A
A
I
= 5 mA
F
1.3
1.2
1.1
1.0
0.1
0.01
T
= 100˚C
A
0.1
1
10
100
1
10
100
I
- LED FORWARDCURRENT (mA)
V
- COLLECTOR VOLTAGE (V)
CE
F
Fig. 1 LED Forward Voltage vs. Forward Current
Fig. 2 Normalized Output Characteristics
10
Normalized to:
= 10 V
Normalized to:
V
CE
= 10 mA
V
= 10 V
CE
= 10 mA
I
R
T
F
I
F
6
= 10 Ω
BE
= 25˚C
6
= 10 Ω
R
BE
= 25˚C
I
I
= 20 mA
= 10 mA
F
F
A
T
A
1
1
I
= 5 mA
F
0.1
0.01
0.1
-60
1
10
-40
-20
0
20
40
60
80
100
I
- LED INPUT CURRENT (mA)
T - AMBIENT TEMPERATURE (˚C)
A
F
Fig. 3 Normalized Output Current vs. LED Input Current
Fig. 4 Normalized Output Current vs.Temperature
10
9
8
7
6
5
4
3
2
1
0
Normalized to:
Normalized to:
V
R
= 100 V
V
I
= 10 V
CE
10000
1000
100
10
CE
6
= 10
Ω
= 10 mA
BE
= 25˚C
F
6
T
R = 10
Ω
A
I
= 50 mA
BE
F
T
= 25˚C
A
V
CE
= 300 V
V
CE
= 100 V
V
CE
= 50 V
I
I
= 10 mA
F
F
1
= 5 mA
-40
0.1
10
20
30
T
40
50
60
70
80
90
100
110
-60
-20
T
0
20
40
60
80
100
- AMBIENT TEMPERATURE (˚C)
- AMBIENT TEMPERATURE (˚C)
A
A
Fig. 5 Normalized Dark Current vs. Ambient Temperature
Fig. 6 Normalized Collector-Base Current vs.Temperature
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
5
Package Dimensions
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.100 (2.54)
0.015 (0.38)
0.025 (0.63)
0.020 (0.51)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
15°
0.035 (0.88)
0.006 (0.16)
0.100 (2.54)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
0.4" Lead Spacing
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
0.070 (1.78)
0.060 (1.52)
0.260 (6.60)
0.240 (6.10)
0.425 (10.79)
0.100 (2.54)
0.305 (7.75)
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.008 (0.21)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters).
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
6
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
H11D1M
H11D1SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
H11D1SR2M
H11D1TM
V
H11D1VM
VDE 0884
TV
H11D1TVM
H11D1SVM
H11D1SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
H11D1
V X YY Q
6
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
7
Carrier Tape Specifications
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
20
33 Sec
0
0
60
120
180
270
360
Time (s)
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
8
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx®
Power247®
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
SuperSOT™-8
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Current Transfer Logic™
EcoSPARK®
QS™
®
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
FAST®
OPTOPLANAR®
FastvCore™
®
UniFET™
VCX™
FPS™
FRFET®
PDP-SPM™
Power220®
Global Power ResourceSM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
9
相关型号：
©2020 ICPDF网 联系我们和版权申明