H11F2_NL [FAIRCHILD]

FET Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6;
H11F2_NL
型号: H11F2_NL
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

FET Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6

输出元件 光电
文件: 总11页 (文件大小:278K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
September 2009  
H11F1M, H11F2M, H11F3M  
Photo FET Optocouplers  
Features  
General Description  
As a remote variable resistor:  
100to 300MΩ  
The H11FXM series consists of a Gallium-Aluminum-  
Arsenide IRED emitting diode coupled to a symmetrical  
bilateral silicon photo-detector. The detector is electri-  
cally isolated from the input and performs like an ideal  
isolated FET designed for distortion-free control of low  
level AC and DC analog signals. The H11FXM series  
devices are mounted in dual in-line packages.  
15pF shunt capacitance  
100GI/O isolation resistance  
As an analog switch:  
Extremely low offset voltage  
60 V  
signal capability  
pk-pk  
No charge injection or latch-up  
t , t 15µS  
on off  
UL recognized (File #E90700)  
Applications  
As a remote variable resistor:  
Isolated variable attenuator  
Automatic gain control  
Active filter fine tuning/band switching  
As an analog switch:  
Isolated sample and hold circuit  
Multiplexed, optically isolated A/D conversion  
Schematic  
Package Outlines  
OUTPUT  
TERM.  
1
ANODE  
6
5
CATHODE 2  
OUTPUT  
TERM.  
4
3
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Device  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
Lead Solder Temperature  
All  
All  
All  
-40 to +150  
-40 to +100  
°C  
°C  
°C  
STG  
T
OPR  
T
260 for 10 sec  
SOL  
EMITTER  
I
Continuous Forward Current  
All  
All  
All  
All  
60  
5
mA  
V
F
V
Reverse Voltage  
R
I
Forward Current – Peak (10µs pulse, 1% duty cycle)  
LED Power Dissipation 25°C Ambient  
Derate Linearly from 25°C  
1
A
F(pk)  
P
100  
1.33  
mW  
mW/°C  
D
DETECTOR  
P
Detector Power Dissipation @ 25°C  
Derate linearly from 25°C  
All  
300  
4.0  
30  
mW  
mW/°C  
V
D
BV  
Breakdown Voltage (either polarity)  
H11F1M,  
H11F2M  
4-6  
H11F3M  
All  
15  
V
I
Continuous Detector Current (either polarity)  
100  
mA  
4-6  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
2
Electrical Characteristics (T = 25°C unless otherwise specified.)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
V
Input Forward Voltage  
I = 16mA  
All  
All  
All  
1.3  
50  
1.75  
10  
V
F
F
I
Reverse Leakage Current V = 5V  
µA  
pF  
R
R
C
Capacitance  
V = 0 V, f = 1.0MHz  
J
OUTPUT DETECTOR  
BV  
Breakdown Voltage  
Either Polarity  
I
= 10µA, I = 0  
H11F1M, H11F2M  
30  
15  
V
4-6  
4-6  
F
H11F3M  
All  
I
Off-State Dark Current  
V
V
= 15 V, I = 0  
50  
50  
nA  
µA  
4-6  
4-6  
F
= 15 V, I = 0,  
All  
4-6  
F
T = 100°C  
A
R
C
Off-State Resistance  
Capacitance  
V
V
= 15 V, I = 0  
All  
All  
300  
MΩ  
4-6  
4-6  
F
= 15 V, I = 0,  
15  
pF  
4-6  
4-6  
F
f = 1MHz  
Transfer Characteristics  
Symbol  
Characteristics  
Test Conditions  
Device  
Min Typ* Max Units  
DC CHARACTERISTICS  
R
On-State Resistance  
On-State Resistance  
I = 16mA,  
H11F1M  
H11F2M  
H11F3M  
H11F1M  
H11F2M  
H11F3M  
All  
200  
330  
470  
200  
330  
470  
%
4-6  
F
I
= 100µA  
4-6  
R
I = 16mA,  
6-4  
F
I
= 100µA  
6-4  
Resistance, non-linearity I = 16mA,  
2
F
and assymetry  
I
= 25µA RMS,  
4-6  
f = 1kHz  
AC CHARACTERISTICS  
t
t
Turn-On Time  
Turn-Off Time  
R
= 50, I = 16mA,  
= 5V  
All  
All  
25  
25  
µs  
µs  
on  
L
F
V
4-6  
R
= 50, I = 16mA,  
F
off  
L
V
= 5V  
4-6  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Device  
All  
Min.  
Typ.*  
Max.  
Units  
V
R
C
Isolation Voltage  
f = 60Hz, t = 1 sec.  
7500  
V
PEAK  
ISO  
ISO  
ISO  
AC  
11  
Isolation Resistance  
Isolation Capacitance  
V
= 500 VDC  
All  
10  
I-O  
f = 1MHz  
All  
0.2  
pF  
*All Typical values at T = 25°C  
A
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
3
Safety and Insulation Ratings  
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Installation Classifications per DIN VDE 0110/1.89  
Table 1  
For Rated Main Voltage < 150Vrms  
For Rated Main voltage < 300Vrms  
Climatic Classification  
I-IV  
I-IV  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
V
Input to Output Test Voltage, Method b,  
1594  
V
V
PR  
peak  
V
x 1.875 = V , 100% Production Test  
IORM  
PR  
with tm = 1 sec, Partial Discharge < 5pC  
Input to Output Test Voltage, Method a,  
1275  
peak  
V
x 1.5 = V , Type and Sample Test  
PR  
IORM  
with tm = 60 sec, Partial Discharge < 5pC  
Max. Working Insulation Voltage  
Highest Allowable Over Voltage  
External Creepage  
V
850  
6000  
7
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
External Clearance  
7
Insulation Thickness  
0.5  
9
RIO  
Insulation Resistance at Ts, V = 500V  
10  
IO  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
4
Typical Performance Curves  
Figure 1. Resistance vs. Input Current  
Figure 2. Output Characteristics  
800  
600  
400  
200  
0
I
= 18mA  
= 14mA  
= 10mA  
F
I
F
I
10  
F
I
F
= 6mA  
I
= 2mA  
F
I
F
= 2mA  
I
I
I
= 6mA  
F
F
F
-200  
-400  
-600  
-800  
1
= 10mA  
= 14mA  
I
= 18mA  
F
Normalized to:  
I
I
= 16mA  
F
= 5µA RMS  
46  
0.1  
-0.2  
-0.1  
0.0  
0.1  
0.2  
1
1
0
100  
V
– OUTPUT VOLTAGE (V)  
46  
I
F
– INPUT CURRENT (mA)  
Figure 3. LED Forward Voltage vs. Forward Current  
Figure 4. Off-state Current vs. Ambient Temperature  
10000  
2.0  
1.8  
1.6  
1.4  
1.2  
NORMALIZED TO:  
= 15V  
V
46  
= 0mA  
I
F
T
A
= 25°C  
1000  
100  
10  
T
= -55°C  
= 25°C  
A
T
A
1.0  
0.8  
T
= 100°C  
A
1
0.1  
1
10  
100  
0
20  
40  
60  
80  
100  
T
A
– AMBIENT TEMPERATURE (°C)  
I
F
– LED FORWARD CURRENT (mA)  
Figure 5. Resistive Non-Linearity vs. D.C. Bias  
5
4
3
2
I
= 10µA RMS  
4-6  
r(on) = 200Ω  
1
0
1
50  
100  
150  
200  
250  
300  
350  
V
4-6  
– D.C. BIAS VOLTAGE (mV)  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
5
Typical Applications  
As a Variable Resistor  
As an Analog Signal Switch  
ISOLATED SAMPLE AND HOLD CIRCUIT  
ISOLATED VARIABLE ATTENUATORS  
500K  
+
-
VIN  
VOUT  
VOUT  
VIN  
VIN  
50  
VIN  
IF  
VOUT  
H11F1M  
H11F1M  
H11F1M  
C
IF  
VOUT  
IF  
LOW FREQUENCY  
t
IF  
HIGH FREQUENCY  
DYNAMIC RANGE 70db  
FOR 0 IF 30mA  
DYNAMIC RANGE 50db  
@1MHz  
@10KHz  
FOR 0 IF 30mA  
Accuracy and range are improved over conventional FET  
switches because the H11FXM has no charge injection from  
the control signal. The H11FXM also provides switching of  
either polarity input signal up to 30V mag.nitude.  
Distortion free attenuation of low level A.C. signals is accom-  
plished by varying the IRED current, I Note the wide dynamic  
F
range and absence of coupling capacitors; D.C. level shifting or  
parasitic feedback to the controlling function.  
AUTOMATIC GAIN CONTROL  
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION  
CALL V1  
H11F1M  
CALL  
Vn  
DATA  
VOUT  
VIN  
ACQUISITION  
V1  
V2  
H74A1  
+
-
MSB  
LSB  
MSB  
LSB  
A/D  
CONVERTER  
PROCESS  
CONTROL  
LOGIC  
Vn  
H74A1  
H11F1M  
IF  
SYSTEM  
500K  
H11F1M  
AGC  
SIGNAL  
This simple circuit provides over 70db of stable gain control for  
an AGC signal range of from 0 to 30mA. This basic circuit can  
be used to provide programmable fade and attack for electronic  
music.  
The optical isolation, linearity and low offset voltage of the  
H11FXM allows the remote multiplexing of low level analog signals  
from such transducers as thermocouplers, Hall effect devices,  
strain gauges, etc. to a single A/D converter.  
ACTIVE FILTER FINE TUNING/BAND SWITCHING  
TEST EQUIPMENT - KELVIN CONTACT POLARITY  
IF1  
IF2  
H11F1M  
H11F1M  
H11F1M  
H11F1M  
IF  
IF  
A
C
ITEST  
DEVICE  
UNDER  
TEST  
I
F TO  
A1  
A2  
A & B FOR  
POLARITY 1  
A3  
PARAMETER  
SENSING  
BOARD  
C & D FOR  
POLARITY 2  
B
D
IF  
IF  
H11F1M  
H11F1M  
IF1 ADJUSTS f1, IF2 ADJUSTS f2  
In many test equipment designs the auto polarity function uses  
reed relay contacts to switch the Kelvin Contact polarity. These  
reeds are normally one of the highest maintenance cost items  
due to sticking contacts and mechanical problems. The totally  
solid-State H11FXM eliminates these troubles while providing  
faster switching.  
The linearity of resistance and the low offset voltage of the  
H11FXM allows the remote tuning or band-switching of active  
filters without switching glitches or distortion. This schematic  
illustrates the concept, with current to the H11F1M IRED’s  
controlling the filter’s transfer characteristic.  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
6
Package Dimensions  
Through Hole  
0.4" Lead Spacing  
8.13–8.89  
6
4
8.13–8.89  
6
4
6.10–6.60  
6.10–6.60  
Pin 1  
1
3
Pin 1  
1
3
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
7.62 (Typ.)  
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.20–0.30  
(0.86)  
15° (Typ.)  
(0.86)  
0.41–0.51  
0.76–1.14  
0.20–0.30  
10.16–10.80  
1.02–1.78  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Surface Mount  
(1.78)  
8.13–8.89  
6
4
(1.52)  
(2.54)  
(7.49)  
6.10–6.60  
8.43–9.90  
(10.54)  
1
3
(0.76)  
Pin 1  
Rcommended Pad Layout  
0.25–0.36  
3.28–3.53  
5.08  
(Max.)  
0.20–0.30  
0.38 (Min.)  
0.16–0.88  
(8.13)  
2.54 (Bsc)  
(0.86)  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Note:  
All dimensions in mm.  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
7
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
H11F1M  
H11F1SM  
Standard Through Hole Device  
S
SR2  
V
Surface Mount Lead Bend  
H11F1SR2M  
H11F1VM  
Surface Mount; Tape and Reel  
IEC60747-5-2 approval  
TV  
H11F1TVM  
H11F1SVM  
H11F1SR2VM  
IEC60747-5-2 approval, 0.4" Lead Spacing  
IEC60747-5-2 approval, Surface Mount  
IEC60747-5-2 approval, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
H11F1  
6
V X YY Q  
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One digit year code, e.g., ‘7’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
8
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
0.30 ± 0.05  
4.0 ± 0.1  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
9
Reflow Profile  
Max. Ramp-up Rate = 3°C/S  
Max. Ramp-down Rate = 6°C/S  
T
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
Tsmax  
t
L
Preheat Area  
Tsmin  
t
s
60  
40  
20  
0
120  
Time 25°C to Peak  
240  
360  
Time (seconds)  
Profile Freature  
Pb-Free Assembly Profile  
150°C  
Temperature Min. (Tsmin)  
Temperature Max. (Tsmax)  
200°C  
Time (t ) from (Tsmin to Tsmax)  
60–120 seconds  
3°C/second max.  
217°C  
S
Ramp-up Rate (t to t )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60–150 seconds  
260°C +0°C / –5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Ramp-down Rate (T to T )  
6°C/second max.  
8 minutes max.  
P
L
Time 25°C to Peak Temperature  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
10  
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
PowerTrench®  
PowerXS™  
The Power Franchise®  
Auto-SPM  
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
EcoSPARK®  
EfficentMax™  
EZSWITCH™*  
™*  
F-PFS™  
FRFET®  
Global Power ResourceSM  
Green FPS™  
Green FPSe-Series™  
Gmax™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Programmable Active Droop™  
QFET®  
TinyBoost™  
TinyBuck™  
QS™  
Quiet Series™  
RapidConfigure™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
Saving our world, 1mW/W/kW at a time™  
SmartMax™  
TinyWire™  
TriFault Detect™  
TRUECURRENT*  
µSerDes™  
SMART START™  
SPM®  
®
MicroPak™  
MillerDrive™  
MotionMax™  
Motion-SPM™  
OPTOLOGIC®  
STEALTH™  
SuperFET™  
SuperSOT-3  
SuperSOT-6  
SuperSOT-8  
SupreMOS™  
SyncFET™  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
UHC®  
Ultra FRFET™  
UniFET™  
VCX™  
VisualMax™  
XS™  
OPTOPLANAR®  
FAST®  
®
FastvCore™  
FETBench™  
PDP SPM™  
Power-SPM™  
Sync-Lock™  
FlashWriter®  
®
*
*
FPS™  
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR  
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE  
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,  
WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain life,  
and (c) whose failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be reasonably  
expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ANTI-COUNTERFEITING POLICY  
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,  
under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.  
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,  
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of  
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are  
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have  
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.  
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide  
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our  
customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change in  
any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
First Production  
Full Production  
Not In Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes  
at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I40  
©2007 Fairchild Semiconductor Corporation  
H11F1M, H11F2M, H11F3M Rev. 1.0.4  
www.fairchildsemi.com  
11  

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ISOCOM

H11F3-SMT&R

Optocoupler - Transistor Output, 1 CHANNEL FET OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6
ISOCOM

H11F3.300

FET Output Optocoupler, 1-Element, 5300V Isolation,
QT

H11F3.300W

FET Output Optocoupler, 1-Element, 5300V Isolation,
QT

H11F3.3S

FET Output Optocoupler, 1-Element, 5300V Isolation,
QT

H11F3.3SD

暂无描述
QT

H11F3.3SDL

FET Output Optocoupler, 1-Element, 5300V Isolation, DIP-6
FAIRCHILD

H11F3.SD

FET Output Optocoupler, 1-Element, 5300V Isolation,
QT

H11F3.SDL

FET Output Optocoupler, 1-Element, 5300V Isolation, DIP-6
FAIRCHILD

H11F3.W

FET Output Optocoupler, 1-Element, 5300V Isolation, DIP-6
FAIRCHILD

H11F3.W

FET Output Optocoupler, 1-Element, 5300V Isolation,
QT