H11G2M_技术文档

May 2007

H11G1M, H11G2M, H11G3M

tm

High Voltage Photodarlington Optocouplers

Features

General Description

■ High BV

The H11GXM series are photodarlington-type optically

coupled optocouplers. These devices have a gallium

arsenide infrared emitting diode coupled with a silicon

darlington connected phototransistor which has an inte-

gral base-emitter resistor to optimize elevated tempera-

ture characteristics.

CEO

– Minimum 100V for H11G1M

– Minimum 80V for H11G2M

– Minimum 55V for H11G3M

■ High sensitivity to low input current

(Min. 500% CTR at I = 1mA)

F

■ Low leakage current at elevated temperature

(Max. 100µA at 80°C)

■ Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

Applications

■ CMOS logic interface

■ Telephone ring detector

■ Low input TTL interface

■ Power supply isolation

■ Replace pulse transformer

Schematic

ANODE 1

6 BASE

CATHODE

N/C

COLLECTOR

2

3

5

4

EMITTER

H11GXM Rev. 1.0.0

www.fairchildsemi.com

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Value

Units

TOTAL DEVICE

T

Storage Temperature

Operating Temperature

-55 to +150

-40 to +100

260 for 10 sec

260

°C

STG

T

OPR

T

Lead Solder Temperature (Wave Solder)

°C

SOL

P

Total Device Power Dissipation @ T = 25°C

mW

mW/°C

D

A

3.5

Derate Above 25°C

EMITTER

I

60

6.0

3.0

mA

V

F

Forward Input Current

V

R

Reverse Input Voltage

I (pk)

A

F

Forward Current – Peak (1µs pulse, 300pps)

P

LED Power Dissipation @ T = 25°C

100

1.8

mW

D

A

mW/°C

Derate Above 25°C

DETECTOR

V

Collector-Emitter Voltage

H11G1M

CEO

V

100

80

H11G2M

H11G3M

55

P

LED Power Dissipation @ T = 25°C

200

2.67

mW

D

A

mW/°C

Derate Above 25°C

H11GXM Rev. 1.0.0

www.fairchildsemi.com

2

Electrical Characteristics ^(T= 25°C unless otherwise specified.)

A

Individual Component Characteristics

Symbol

Characteristic

Test Conditions

Device

Min.

Typ.* Max. Unit

EMITTER

V

Forward Voltage

I = 10mA

All

1.3

1.50

V

F

∆V

∆T

Forward Voltage

Temp. Coefﬁcient

-1.8

mV/°C

F

A

BV

Reverse Breakdown

Voltage

I

= 10µA

All

3.0

25

V

R

C

Junction Capacitance V = 0V, f = 1MHz

50

65

pF

J

F

V = 1V, f = 1MHz

F

I

Reverse Leakage

Current

V

= 3.0V

R

All

0.001

10

µA

V

R

DETECTOR

BV

Breakdown Voltage

Collector to Emitter

I

= 1.0mA, I = 0

H11G1M

H11G2M

H11G3M

H11G1M

H11G2M

H11G3M

All

100

80

55

100

80

55

7

CEO

CBO

EBO

C

F

Collector to Base

= 100µA

V

Emitter to Base

10

V

I

Leakage Current

Collector to Emitter

V

= 80V, I = 0

H11G1M

H11G2M

H11G3M

H11G1M

H11G2M

100

nA

CEO

CE

F

= 60V, I = 0

F

= 30V, I = 0

F

= 80V, I = 0, T = 80°C

µA

F

A

= 60V, I = 0, T = 80°C

F

A

Transfer Characteristics

Symbol

EMITTER

CTR

Characteristics

Test Conditions

Device

Min.

Typ.* Max. Units

Current Transfer

Ratio, Collector to

Emitter

I = 10mA, V = 1V

H11G1M/2M

H11G3M

100 (1000)

5 (500)

mA (%)

F

CE

I = 1mA, V = 5V

F

CE

2 (200)

V

Saturation Voltage

I = 16mA, I = 50mA

H11G1M/2M

H11G3M

0.85

0.75

0.85

1.0

1.2

V

CE(SAT)

F

C

I = 1mA, I = 1mA

F

C

I = 20mA, I = 50mA

F

C

SWITCHING TIMES

Turn-on Time

Turn-off Time

R = 100Ω, I = 10mA,

CE

Pulse Width ≤ 300µs

All

5

t

µs

L

F

ON

V

= 5V, f ≤ 30Hz,

100

t

OFF

Isolation Characteristics

Symbol Characteristic

Test Conditions

Device

All

Min.

Typ.*

Max.

Units

V

R

C

Isolation Voltage

f = 60Hz, t = 1 sec.

7500

V

PEAK

ISO

AC

11

Isolation Resistance

Isolation Capacitance

V

= 500 VDC

All

10

Ω

I-O

f = 1MHz

All

0.2

pF

*All Typical values at T = 25°C

A

H11GXM Rev. 1.0.0

www.fairchildsemi.com

3

Typical Performance Curves

100

10

Normalized to:

= 5V

V

CE

= 1mA

I

F

T

= 25˚C

A

I

= 50mA

= 5mA

1

0.1

F

Normalized to:

= 5V

V

CE

= 1mA

I

F

I

= 1mA

F

1

= 0.5mA

0.1

0.01

0.001

0.01

-60

-40

-20

T

0

20

40

60

80

100

120

0.1

1

10

- AMBIENT TEMPERATURE (˚C)

I

- LED INPUT CURRENT(mA)

A

F

Fig. 2 Normalized Output Current vs.Temperature

Fig. 1 Output Current vs. Input Current

1000

100

10

100

Normalized to:

V

I

= 5 V

CE

= 1 mA

I

= 50mA

= 10mA

F

V

CE

= 80V

F

T

A

= 25˚C

10

1

I

= 2mA

= 1mA

V

CE

= 30V

F

V

CE

= 10V

I

= 0.5mA

1

F

0.1

0.01

0.1

0.01

0

10

20

30

40

50

60

70

80

90

100

1

10

T

A

- AMBIENT TEMPERATURE (˚C)

V

CE

- COLLECTOR - EMITTER VOLTAGE (V)

Fig. 3 Output Current vs. Collector - Emitter Voltage

Fig. 4 Collector-Emitter Dark Current

vs. Ambient Temperature

10

R

L

= 10Ω

R

L

= 100Ω

R = 1kΩ

L

1

Normalized to:

= 5 V

V

CC

= 10 mA

I

F

R

L

= 100 Ω

0.1

1

10

t

+ t - TOTAL SWITCHING SPEED (NORMALIZED)

off

on

Fig. 5 Input Current vs.Total Switching Speed (Typical Values)

H11GXM Rev. 1.0.0

www.fairchildsemi.com

4

Package Dimensions

Through Hole

Surface Mount

0.350 (8.89)

0.320 (8.13)

0.350 (8.89)

0.320 (8.13)

0.390 (9.90)

0.332 (8.43)

0.260 (6.60)

0.240 (6.10)

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

0.040 (1.02)

0.070 (1.77)

0.040 (1.02)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.200 (5.08)

0.115 (2.93)

0.012 (0.30)

0.008 (0.20)

0.100 (2.54)

0.015 (0.38)

0.025 (0.63)

0.020 (0.51)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

15°

0.035 (0.88)

0.006 (0.16)

0.100 (2.54)

0.020 (0.50)

0.016 (0.41)

0.012 (0.30)

0.4" Lead Spacing

Recommended Pad Layout for

Surface Mount Leadform

0.350 (8.89)

0.320 (8.13)

0.070 (1.78)

0.060 (1.52)

0.260 (6.60)

0.240 (6.10)

0.425 (10.79)

0.100 (2.54)

0.305 (7.75)

0.070 (1.77)

0.040 (1.02)

0.014 (0.36)

0.010 (0.25)

0.030 (0.76)

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.012 (0.30)

0.008 (0.21)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

0.425 (10.80)

0.400 (10.16)

Note:

All dimensions are in inches (millimeters).

H11GXM Rev. 1.0.0

www.fairchildsemi.com

5

Ordering Information

Order Entry Identiﬁer

(Example)

Option

Description

No option

H11G1M

H11G1SM

Standard Through Hole Device

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

S

SR2

T

H11G1SR2M

H11G1TM

V

H11G1VM

VDE 0884

TV

H11G1TVM

H11G1SVM

H11G1SR2VM

VDE 0884, 0.4" Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape and Reel

SV

SR2V

Marking Information

1

2

H11G1

V X YY Q

6

5

3

4

Deﬁnitions

1

2

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

3

4

5

6

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

H11GXM Rev. 1.0.0

www.fairchildsemi.com

6

Carrier Tape Speciﬁcations

12.0 0.1

2.0 0.05

4.5 0.20

Ø1.5 MIN

1.75 0.10

0.30 0.05

4.0 0.1

11.5 1.0

24.0 0.3

9.1 0.20

21.0 0.1

Ø1.5 0.1/-0

10.1 0.20

0.1 MAX

User Direction of Feed

Reﬂow Proﬁle

300

280

260

240

220

200

180

160

140

120

100

80

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

1.822°C/Sec Ramp up rate

60

40

20

33 Sec

0

60

120

180

270

360

Time (s)

H11GXM Rev. 1.0.0

www.fairchildsemi.com

7

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an

exhaustive list of all such trademarks.

ACEx^®

i-Lo™

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyWire™

TruTranslation™

µSerDes™

UHC^®

Across the board. Around the world.™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

CTL™

Current Transfer Logic™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

MICROCOUPLER™

MicroPak™

MICROWIRE™

Motion-SPM™

MSX™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

ScalarPump™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

DOME™

UniFET™

VCX™

Wire™

MSXPro™

OCX™

E²CMOS™

EcoSPARK^®

EnSigna™

OCXPro™

OPTOLOGIC^®

OPTOPLANAR^®

PACMAN™

PDP-SPM™

POP™

FACT Quiet Series™

FACT^®

FAST^®

FASTr™

Power220^®

FPS™

FRFET^®

Power247^®

TCM™

PowerEdge™

PowerSaver™

The Power Franchise^®

™

GlobalOptoisolator™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed

Obsolete

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I26

H11GXM Rev. 1.0.0

www.fairchildsemi.com

8


型号：	H11G2M
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	High Voltage Photodarlington Optocouplers 高压光电复合光耦合器光电输出元件高压 PC
文件：	总8页 (文件大小：134K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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