HGTP2N120CN [FAIRCHILD]
13A, 1200V, NPT Series N-Channel IGBT; 13A ， 1200V ，不扩散核武器条约系列N沟道IGBT
| 型号： | HGTP2N120CN |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 文件： | 总9页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2005
HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
Features
Description
•
•
•
•
•
•
•
13A, 1200V, T = 25°C
The HGTP2N120CN and HGT1S2N120CN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs combine
the best features of MOSFETs and bipolar transistors. This
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
C
1200V Switching SOA Capability
Typical Fall Time 360ns at T = 150°C
J
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
Formerly Developmental Type TA49313
•
•
Related Literature
TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Informations
Part Number
HGTP2N120CN
HGT1S2N120CN
Package
Brand
2N120CN
2N120CN
TO-220AB
TO-262
Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-
263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.
C
E
C
COLLECTOR
(FLANGE)
E
C
G
G
G
COLLECTOR
(FLANGE)
TO-220
TO-262
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2005 Fairchild Semiconductor Corporation
HGTP2N120CN, HGT1S2N120CN Rev. C
1
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Absolute Maximum Ratings
T = 25°C, Unless Otherwise Specified
C
HGTP2N120CN
HGT1S2N120CN
Symbol
Parameter
Units
BV
Collector to Emitter Voltage
Collector Current Continuous
1200
V
CES
I
I
At T = 25°C
13
7
A
A
C25
C110
C
At T = 110°C
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
20
±20
A
V
V
CM
V
V
GES
GEM
±30
SSOA
Switching SOA Operating Area at T = 150°C (Figure 2)
13A at 1200V
104
J
P
Power Dissipation Total at T = 25°C
W
W/°C
mJ
D
C
Power Dissipation Derating T > 25°C
0.83
C
E
Forward Voltage Avalanche Energy (Note 2)
18
AV
t , T
Operating and Storage Junction Temperature Range
-55 to 150
°C
J
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, see Tech Brief 334
T
T
300
260
°C
°C
L
PKG
t
Short Circuit Withstand Time (Note 3) at V = 15V
8
µs
SC
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied.
Notes:
1. Pulse width limited by maximum junction temperature.
2. I = 3A, L = 4mH
CE
3. V
= 840V, T = 125°C, R = 51Ω.
J G
CE(PK)
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
CES
Parameter
Test Conditions
Min. Typ. Max. Units
BV
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
I
I
= 250µA, V = 0V
1200
-
-
V
C
C
GE
BV
= 10mA, V = 0V
15
-
-
V
ECS
GE
I
V
= 1200V
T = 25°C
-
-
-
100
-
100
-
µA
µA
mA
V
CES
CE
J
T = 125°C
J
T = 150°C
-
1.0
2.40
3.50
-
J
V
V
Collector to Emitter Saturation Voltage
I
V
= 2.6A,
= 15V
T = 25°C
-
2.05
2.75
6.7
-
CE(SAT)
C
J
GE
T = 150°C
-
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
I
= 45µA, V = V
6.4
-
V
GE(TH)
GES
C
CE
GE
I
V
=
20V
250
-
nA
A
GE
SSOA
T = 150°C, R = 51Ω, V = 15V
13
-
J
G
GE
= 1200V
L = 5mH, V
CE(PK)
V
Gate to Emitter Plateau Voltage
On-State Gate Charge
I
I
= 2.6A, V = 600V
-
-
-
10.2
30
-
V
GEP
C
CE
Q
= 2.6A,
= 600V
V
V
= 15V
= 20V
36
43
nC
nC
g(ON)
C
V
GE
GE
CE
36
2
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HGTP2N120CN, HGT1S2N120CN Rev. C
Electrical Characteristics
T = 25°C unless otherwise noted (Continued)
C
Symbol
d(ON)l
Parameter
Test Conditions
Min. Typ. Max. Units
t
t
t
t
Current Trun-On Delay Time
IGBT and Diode at T = 25°C
CE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
30
ns
J
I
= 2.6A
Current Rise Time
11
15
ns
rl
V
V
= 960V
= 15V
CE
Curent Turn-Off Delay Time
Current Fall Time
205
260
96
220
320
-
ns
d(OFF)l
GE
R
= 51Ω
L = 5mH
G
ns
fl
E
E
E
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Curent Turn-On Delay Time
Current Rise Time
µJ
ON1
ON2
OFF
d(ON)l
rl
Test Circuit (Figure 18)
425
355
21
590
390
25
µJ
µJ
t
t
t
t
IGBT and Diode at T = 150°C
ns
J
I
= 2.6A
CE
CE
GE
11
15
ns
V
V
= 960V
= 15V
Curent Turn-Off Delay Time
Current Fall Time
225
360
96
240
420
-
ns
d(OFF)l
fl
R
= 51Ω
L = 5mH
G
ns
E
E
E
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction to Case
µJ
ON1
ON2
OFF
Test Circuit (Figure 18)
800
530
-
1100
580
1.20
µJ
µJ
R
°C/W
θJC
Notes:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
is the turn-on loss when a typical
ON2
ON1
diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in Figure 18.
J
5. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector
OFF
current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method
CE
produces the true total Turn-Off Energy Loss.
3
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HGTP2N120CN, HGT1S2N120CN Rev. C
Typical Performance Characteristics
Figure 1. DC Collector Current vs
Case Temperature
Figure 2. Minimum Switching Safe Operating
Area
14
16
o
V
= 15V
T
= 150 C, R = 51Ω, V = 15V, L = 5mH
G GE
GE
J
14
12
10
8
12
10
8
6
6
4
4
2
2
0
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
C
CE
Figure 3. Operating Frequency vs Collector to
Emitter Currentl
Figure 4. Short Circuit Withstand Time
50
50
40
30
20
10
0
200
o
T
= 150 C, R = 51Ω, V = 15V, L = 5mH
G GE
o
J
V
= 840V, R = 51Ω, T = 125 C
G J
CE
T
V
C
o
GE
o
T
= 75 C,V = 15V
GE
C
100
50
75 C 15V
40
30
20
10
0
o
IDEAL DIODE
12V
75 C
f
f
= 0.05 / (t
+ t
ON2
)
MAX1
MAX2
C
d(OFF)I
C
d(ON)I
I
t
SC
SC
= (P - P ) / (E
+ E
)
D
OFF
P
= CONDUCTION DISSIPATION
10
T
V
C
GE
(DUTY FACTOR = 50%)
o
15V
12V
o
110 C
R
= 1.2 C/W, SEE NOTES
o
ØJC
110 C
10
11
V , GATE TO EMITTER VOLTAGE (V)
GE
12
13
14
15
1
2
3
4
5
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
10
10
DUTY CYCLE <0.5%, V = 15V
GE
250µ
s PULSE TEST
8
8
6
4
2
0
o
o
T
= -55 C
T
= 25 C
C
o
C
T
= 25 C
C
6
4
2
0
o
T
= -55 C
C
o
T
= 150 C
C
o
T
= 150 C
C
DUTY CYCLE <0.5%, V = 12V
GE
250
µ
S PULSE TEST
0
1
2
3
4
5
6
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
4
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HGTP2N120CN, HGT1S2N120CN Rev. C
Typical Performance Characteristics (Continued)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
900
2000
R
= 51Ω, L = 5mH, V = 960V
CE
G
R
= 51Ω, L = 5mH, V = 960V
CE
G
800
700
600
500
400
300
200
100
1500
1000
500
0
o
o
T
= 150 C, V = 12V, V = 15V
GE GE
T
= 150 C, V = 12V OR 15V
GE
J
J
o
T
= 25 C, V = 12V OR 15V
GE
J
o
T
= 25 C, V = 12V, V = 15V
GE GE
J
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 9. Turn_On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
40
45
R
= 51Ω, L = 5mH, V = 960V
CE
G
R
= 51Ω, L = 5mH, V = 960V
CE
G
35
30
25
20
15
10
5
40
35
30
25
20
15
o
o
T
= 25 C, T = 150 C, V = 12V
J
J
GE
o
o
T
= 25 C, T = 150 C, V = 12V
J GE
J
o
o
T
= 25 C, T = 150 C, V = 15V
J
J
GE
o
o
T
= 25 C, T = 150 C, V = 15V
J
J
GE
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
700
400
R
= 51Ω, L = 5mH, V = 960V
CE
R
= 51Ω, L = 5mH, V = 960V
CE
G
G
600
500
400
300
200
100
350
300
250
200
150
100
o
V
= 12V, V = 15V, T = 150 C
GE J
GE
o
T
= 150 C, V = 12V OR 15V
GE
J
o
o
V
= 12V, V = 15V, T = 25 C
GE J
T
= 25 C, V = 12V OR 15V
GE
J
GE
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
5
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HGTP2N120CN, HGT1S2N120CN Rev. C
Typical Performance Characteristics (Continued)
Figure 13. Transfer Characteristic
Figure 14. Gate Charage Waveforms
16
40
o
I
= 1mA, R = 260Ω, T = 25 C
L C
G(REF)
DUTY CYCLE <0.5%, V = 20V
CE
14
12
10
8
35
30
25
20
15
10
5
250µS PULSE TEST
V
= 1200V
CE
V
= 400V
V
= 800V
CE
CE
6
o
T
= -55 C
C
4
o
2
T
= 25 C
C
o
T
= 150 C
C
0
0
0
5
10
15
20
25
30
7
8
9
10
11
12
13
14
15
Q , GATE CHARGE (nC)
V
, GATE TO EMITTER VOLTAGE (V)
G
GE
Figure 15. Capacitance vs Collector to Emitter
Figure 16. Collector to Emitter On-Sate Voltage
2.0
5
o
DUTY CYCLE <0.5%, T = 110 C
C
FREQUENCY = 1MHz
250µs PULSE TEST
4
3
2
1
0
1.5
V
= 15V
GE
C
IES
1.0
0.5
0
V
= 10V
GE
C
OES
C
RES
0
0.5
1.0
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
25
V
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 17. Normalized Transient Thermal Response, Junction to Case
0
10
0.5
0.2
0.1
-1
t
10
10
1
0.05
P
D
0.02
t
2
DUTY FACTOR, D = t / t
1
2
0.01
PEAK T = (P X Zθ X Rθ ) + T
J
D
JC
JC
C
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
0
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
6
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HGTP2N120CN, HGT1S2N120CN Rev. C
Test Circuit and Waveforms (Continued)
Figure 18. Inductive Switching Test Circuit
RHRD4120
Figure 19. Switching Test Waveforms
90%
10%
V
GE
L = 5mH
E
ON2
E
OFF
R
= 51Ω
G
V
CE
90%
10%
+
V
= 960V
DD
I
-
CE
t
t
d(OFF)I
rI
t
fI
t
d(ON)I
7
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HGTP2N120CN, HGT1S2N120CN Rev. C
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-insu-
lation damage by the electrostatic discharge of energy through
the devices. When handling these devices, care should be exer-
cised to assure that the static charge built in the handler’s body
capacitance is not discharged through the device. With proper
handling and application procedures, however, IGBTs are cur-
rently being extensively used in production by numerous equip-
ment manufacturers in military, industrial and consumer
applications, with virtually no damage problems due to electro-
static discharge. IGBTs can be handled safely if the following
basic precautions are taken:
Operating frequency information for a typical device (Figure 3)
is presented as a guide for estimating device performance for a
specific application. Other typical frequency vs collector current
(I ) plots are possible using the information shown for a typical
CE
unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot
(Figure 3) of a typical device shows f
or f
; whichever is
MAX2
MAX1
smaller at each point. The information is based on measure-
ments of a typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
+ t
). Deadtime
MAX1
MAX1
d(OFF)I
d(ON)I
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are possible.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting springs
or by the insertion into conductive material such as
“ECCOSORBD™ LD26” or equivalent.
t
and t
are defined in Figure 19. Device turn-off
d(OFF)I
d(ON)I
delay can establish an additional frequency limiting condition for
an application other than T . t is important when control-
JM d(OFF)I
ling output ripple under a lightly loaded condition.
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable means
- for example, with a metallic wristband.
f
is defined by f = (P - P )/(E + E ). The allowable
MAX2
MAX2
D
C
OFF
ON2
dissipation (P ) is defined by P = (T - T )/Rθ . The sum of
D
D
JM
C
JC
device switching and conduction losses must not exceed P .
D
3. Tips of soldering irons should be grounded.
A 50% duty factor was used (Figure 3) and the conduction
4. Devices should never be inserted into or removed from cir-
cuits with power on.
losses (P ) are approximated by P = (V x I )/2.
C
C
CE
CE
E
and E
are defined in the switching waveforms shown
OFF
ON2
5. Gate Voltage Rating - Never exceed the gate-voltage rating
in Figure 19. E
is the integral of the instantaneous power
ON2
of V
. Exceeding the rated V
can result in permanent
loss (I x V ) during turn-on and E
is the integral of the
OFF
GEM
GE
CE
CE
damage to the oxide layer in the gate region.
instantaneous power loss (I x V ) during turn-off. All tail
CE CE
losses are included in the calculation for E
; i.e., the collec-
OFF
6. Gate Termination - The gates of these devices are essen-
tially capacitors. Circuits that leave the gate open-circuited or
floating should be avoided. These conditions can result in
turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
tor current equals zero (I = 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate protection
is required, an external Zener is recommended.
8
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HGTP2N120CN, HGT1S2N120CN Rev. C
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user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
9
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
相关型号：
HGTP2N120CN_NL
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
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