HUFA76429D3ST_F085 [FAIRCHILD]
Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3;型号: | HUFA76429D3ST_F085 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3 晶体管 |
文件: | 总10页 (文件大小:647K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HUFA76429D3
Data Sheet
October 2013
N-Channel Logic Level UltraFET Power MOSFET
60 V, 20 A, 27 mΩ
Packaging
Features
JEDEC TO-251AA
• Ultra Low On-Resistance
- r
- r
= 0.023Ω, V = 10V
GS
DS(ON)
DS(ON)
SOURCE
DRAIN
GATE
= 0.027Ω, V = 5V
GS
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electriecal Models
DRAIN
(FLANGE)
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
TO-251AA
BRAND
76429D
G
HUFA76429D3
S
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
HUFA76429D3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
60
60
16
V
V
V
DSS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
o
Continuous (T = 25 C, V
C
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
20
20
20
A
A
A
A
GS
GS
D
D
D
o
Continuous (T = 25 C, V
C
o
o
Continuous (T = 100 C, V
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
GS
GS
Continuous (T = 100 C, V
20
C
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Figure 4
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figures 6, 17, 18
110
0.74
W
W/ C
D
o
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
o
300
260
C
C
L
pkg
NOTES:
1. T = 25 C to 150 C.
o
o
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
HUFA76429D3 Rev. C1
HUFA76429D3
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
I
= 250µA, V
= 250µA, V
= 0V (Figure 12)
o
60
55
-
-
-
-
-
-
-
-
V
DSS
D
GS
GS
GS
GS
= 0V , T = -40 C (Figure 12)
C
V
D
I
V
V
V
= 55V, V
= 50V, V
= 0V
= 0V, T = 150 C
1
µA
µA
nA
DSS
DS
DS
GS
o
-
250
100
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
=
16V
-
GSS
V
V
= V , I = 250µA (Figure 11)
1
-
-
3
V
Ω
Ω
Ω
GS(TH)
GS
DS
D
GS
GS
GS
r
I
I
I
= 20A, V
= 20A, V
= 20A, V
= 10V (Figures 9, 10)
= 5V (Figure 9)
0.0205 0.023
DS(ON)
D
D
D
-
0.024
0.025
0.027
0.029
= 4.5V (Figure 9)
-
THERMAL SPECIFICATIONS
o
Thermal Resistance Junction to Case
R
R
TO-251
-
-
-
-
1.36
100
C/W
θJC
o
Thermal Resistance Junction to
Ambient
C/W
θJA
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 4.5V)
GS
t
V
V
= 30V, I = 20A
-
-
-
-
-
-
-
13
134
30
55
-
220
ns
ns
ns
ns
ns
ns
ON
DD
GS
D
= 4.5V, R
= 7.5Ω
GS
Turn-On Delay Time
Rise Time
t
-
d(ON)
(Figures 15, 21, 22)
t
-
r
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
f
Turn-Off Time
t
130
OFF
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 10V)
t
GS
V
V
= 30V, I = 20A
-
-
-
-
-
-
-
65
ns
ns
ns
ns
ns
ns
ON
DD
GS
D
= 10V,R
= 8.2Ω
GS
Turn-On Delay Time
Rise Time
t
7.7
36
60
56
-
-
d(ON)
(Figures 16, 21, 22)
t
-
r
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
f
Turn-Off Time
t
175
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 10V
= 0V to 5V
= 0V to 1V
V
= 30V,
-
-
-
-
-
38
21
46
25
1.6
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
DD
= 20A,
I
I
D
Gate Charge at 5V
Q
g(5)
= 1.0mA
g(REF)
Threshold Gate Charge
Q
1.3
3.8
9.7
g(TH)
(Figures 14, 19, 20)
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Q
gs
gd
Q
-
C
V
= 25V, V = 0V,
GS
-
-
-
1480
440
90
-
-
-
pF
pF
pF
ISS
DS
f = 1MHz
(Figure 13)
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
1.00
80
UNITS
V
Source to Drain Diode Voltage
V
I
I
I
I
= 20A
= 10A
-
-
-
-
-
-
-
-
SD
SD
SD
SD
SD
V
Reverse Recovery Time
t
= 20A, dI /dt = 100A/µs
SD
ns
rr
Reverse Recovered Charge
Q
= 20A, dI /dt = 100A/µs
SD
230
nC
RR
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HUFA76429D3 Rev. C1
HUFA76429D3
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
25
V
= 10V
GS
20
15
10
5
V
= 4.5V
GS
0
175
0
25
50
75
100
150
175
25
50
75
T , CASE TEMPERATURE ( C)
100
125
150
125
o
o
T
, CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R + T
J
DM
θJC
θJC C
0.01
-5
10
-4
10
-3
10
-2
10
-1
10
0
1
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
600
100
o
T
= 25 C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
V
= 10V
GS
175 - T
150
C
I = I
25
V
= 5V
GS
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
10
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
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HUFA76429D3 Rev. C1
HUFA76429D3
Typical Performance Curves (Continued)
100
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V )
DD
AV
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
AS
DSS
t
AV
- V ) +1]
DD
AS
DSS
100µs
o
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
10
1
LIMITED BY r
DS(ON)
1ms
o
STARTING T = 150 C
J
SINGLE PULSE
10ms
T
T
= MAX RATED
J
C
10
0.01
o
= 25 C
0.1
1
10
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
t
,TIME IN AVALANCHE (ms)
AV
V
DS
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
50
50
PULSE DURATION = 80µs
V
= 10V
V
= 5V
= 4V
GS
GS
DUTY CYCLE = 0.5% MAX
V
= 15V
V
DD
GS
40
30
20
10
40
30
20
10
V
= 3.5V
GS
o
T = 175 C
J
V
= 3V
GS
o
T = -55 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T = 25 C
J
o
T
= 25 C
C
0
0
0
1
2
3
4
1.5
2
2.5
3
3.5
4
V
, GATE TO SOURCE VOLTAGE (V)
V , DRAIN TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
40
2.5
V
= 10V, I = 20A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
GS
D
o
I
= 20A
D
T
= 25 C
C
2.0
1.5
30
20
10
I
= 10A
D
1.0
0.5
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
GS
J
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAINTO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
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HUFA76429D3 Rev. C1
HUFA76429D3
Typical Performance Curves (Continued)
1.2
1.2
1.1
V
= V , I = 250µA
DS
I
= 250µA
GS
D
D
1.0
0.8
0.6
0.4
1.0
0.9
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 11. NORMALIZED GATETHRESHOLDVOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAINTO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
3000
V = 30V
DD
V
= 0V, f = 1MHz
GS
8
6
4
2
0
C
= C
GS
+ C
GD
ISS
1000
C
≅ C
DS
+ C
GD
OSS
WAVEFORMS IN
DESCENDING ORDER:
100
30
I
I
= 20A
= 10A
D
D
C
= C
GD
RSS
0
5
10
15
20
25
30
35
40
0.1
1.0
10
60
Q , GATE CHARGE (nC)
g
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGEWAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
400
300
V
= 10V, V
DD
= 30V, I = 20A
D
V
= 4.5V, V = 30V, I = 20A
DD D
GS
GS
250
200
150
100
50
300
200
100
t
r
t
t
d(OFF)
f
t
t
d(OFF)
f
t
r
t
d(ON)
t
d(ON)
0
0
0
10
20
30
40
50
0
10
20
30
40
50
R
, GATE TO SOURCE RESISTANCE (Ω)
R
, GATE TO SOURCE RESISTANCE (Ω)
GS
GS
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
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HUFA76429D3 Rev. C1
HUFA76429D3
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
AS
G
V
DD
-
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
V
DS
V
Q
DD
R
g(TOT)
L
V
DS
V
= 10V
GS
V
Q
GS
g(5)
+
-
V
DD
V
= 5V
V
GS
GS
DUT
V
= 1V
GS
I
0
g(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
V
GS
V
DD
10%
10%
0
-
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 21. SWITCHING TIME TEST CIRCUIT
FIGURE 22. SWITCHING TIME WAVEFORM
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HUFA76429D3 Rev. C1
HUFA76429D3
PSPICE Electrical Model
.SUBCKT HUFA76429D3 2 1 3 ;
rev 5 July 1999
CA 12 8 2.03e-9
CB 15 14 2.03e-9
CIN 6 8 1.39e-9
LDRAIN
DPLCAP
10
DRAIN
2
5
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
EBREAK 11 7 17 18 68.10
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
5
ESLC
11
51
-
50
+
-
17
18
-
DBODY
RDRAIN
6
ESG
8
EBREAK
EVTHRES
+
+
16
21
-
19
8
MWEAK
IT 8 17 1
LGATE
EVTEMP
+
RGATE
GATE
1
6
-
18
22
MMED
LDRAIN 2 5 1e-9
LGATE 1 9 5.42e-9
LSOURCE 3 7 4.16e-9
9
20
MSTRO
8
RLGATE
LSOURCE
CIN
SOURCE
3
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
7
RSOURCE
RLSOURCE
S1A
S2A
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9.1e-3
RGATE 9 20 2.80
RBREAK
12
15
13
8
14
13
17
18
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*117),3))}
.MODEL DBODYMOD D (IS = 1.25e-12 IKF = 10 RS = 8.40e-3 TRS1 = 2.05e-3 TRS2 = 3.85e-6 CJO = 1.68e-9 TT = 4.90e-8 M = 0.48 XTI = 4.35)
.MODEL DBREAKMOD D (RS = 1.68e-1 TRS1 = 1e-3 TRS2 = -1e-6)
.MODEL DPLCAPMOD D (CJO = 1.28e-9 IS = 1e-30 N = 10 M = 0.8)
.MODEL MMEDMOD NMOS (VTO = 1.98 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.80)
.MODEL MSTROMOD NMOS (VTO = 2.30 KP = 52 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.72 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.15e-3 TC2 = -5.40e-7)
.MODEL RDRAINMOD RES (TC1 = 7.85e-3 TC2 = 1.95e-5)
.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -4.48e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.92e-3 TC2 = 9.50e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.1 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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HUFA76429D3 Rev. C1
HUFA76429D3
SABER Electrical Model
REV 5 July 1999
template HUFA76429d3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 1.25e-12, cjo = 1.68e-9, tt = 4.90e-8, xti = 4.35, m = 0.48)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 1.28e-9, is = 1e-30, n = 10, m = 0.8)
m..model mmedmod = (type=_n, vto = 1.98, kp = 3.2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.30, kp = 52, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.72, kp = 0.08, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2.4)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.4, voff = -6.2)
LDRAIN
RLDRAIN
RDBODY
DPLCAP
DRAIN
2
5
10
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.1, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.1)
RSLC1
51
RDBREAK
72
DBREAK
11
c.ca n12 n8 = 2.03e-9
c.cb n15 n14 = 2.03e-9
c.cin n6 n8 = 1.39e-9
RSLC2
ISCL
50
-
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
71
RDRAIN
6
8
ESG
EVTHRES
+
+
16
21
-
19
8
MWEAK
i.it n8 n17 = 1
LGATE
EVTEMP
+
DBODY
RGATE
GATE
1
6
-
18
22
EBREAK
+
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.42e-9
l.lsource n3 n7 = 4.16e-9
MMED
9
20
MSTRO
8
17
18
-
RLGATE
LSOURCE
CIN
SOURCE
3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
7
RSOURCE
RLSOURCE
S1A
S2A
res.rbreak n17 n18 = 1, tc1 = 1.15e-3, tc2 = -5.40e-7
res.rdbody n71 n5 = 8.40e-3, tc1 = 2.05e-3, tc2 = 3.85e-6
res.rdbreak n72 n5 = 1.68e-1, tc1 = 1.00e-3, tc2 = -1.00e-6
res.rdrain n50 n16 = 9.10e-3, tc1 = 7.85e-3, tc2 = 1.95e-5
res.rgate n9 n20 = 2.80
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 54.2
res.rlsource n3 n7 = 41.6
res.rslc1 n5 n51 = 1e-6, tc1 = 4.97e-3, tc2 = 5.05e-6
res.rslc2 n5 n50 = 1e3
RBREAK
12
15
13
14
13
17
18
8
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
res.rsource n8 n7 = 6.5e-3, tc1 = 1.5e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.92e-3, tc2 = 9.50e-7
res.rvthres n22 n8 = 1, tc1 = -1.85e-3, tc2 = -4.48e-6
RVTHRES
spe.ebreak n11 n7 n17 n18 = 68.10
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/117))** 3))
}
}
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HUFA76429D3 Rev. C1
HUFA76429D3
SPICE Thermal Model
JUNCTION
th
REV 26 July 1999
HUFA76429D3
RTHERM1
CTHERM1
CTHERM1 th 6 2.45e-3
CTHERM2 6 5 8.15e-3
CTHERM3 5 4 7.40e-3
CTHERM4 4 3 7.45e-3
CTHERM5 3 2 1.01e-2
CTHERM6 2 tl 7.49e-2
6
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
RTHERM1 th 6 9.00e-3
RTHERM2 6 5 1.80e-2
RTHERM3 5 4 9.15e-2
RTHERM4 4 3 2.43e-1
RTHERM5 3 2 3.50e-1
RTHERM6 2 tl 3.62e-1
5
SABER Thermal Model
SABER thermal model HUFA76429D3
4
3
2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.45e-3
ctherm.ctherm2 6 5 = 8.15e-3
ctherm.ctherm3 5 4 = 7.40e-3
ctherm.ctherm4 4 3 = 7.45e-3
ctherm.ctherm5 3 2 = 1.01e-2
ctherm.ctherm6 2 tl = 7.49e-2
rtherm.rtherm1 th 6 = 9.00e-3
rtherm.rtherm2 6 5 = 1.80e-2
rtherm.rtherm3 5 4 = 9.15e-2
rtherm.rtherm4 4 3 = 2.43e-1
rtherm.rtherm5 3 2 = 3.50e-1
rtherm.rtherm6 2 tl = 3.62e-1
}
tl
CASE
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HUFA76429D3 Rev. C1
HUFA76429D3
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Rev. I66
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HUFA76429D3 Rev. C1
相关型号:
HUFA76429D3T
Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
FAIRCHILD
HUFA76429D3_NL
Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
FAIRCHILD
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