IRF120 [FAIRCHILD]

N-Channel Power MOSFETs, 11 A, 60-100 V; N沟道功率MOSFET , 11 A, 60〜100 V
IRF120
型号: IRF120
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

N-Channel Power MOSFETs, 11 A, 60-100 V
N沟道功率MOSFET , 11 A, 60〜100 V

文件: 总5页 (文件大小:171K)
下载:  下载PDF数据表文档文件

IRF120-123

N-Channel Power MOSFETs, 11 A, 60-100 V

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119 FAIRCHILD

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926 ETC

IRF120E

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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3 IRF

IRF120EA

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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1 IRF

IRF120EB

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

IRF120PBF

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

IRF121

N-Channel Power MOSFETs, 11 A, 60-100 V

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177 FAIRCHILD

IRF121

N-CHANNEL POWER MOSFETS

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90 SAMSUNG

IRF121

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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84 INTERSIL

IRF122

N-Channel Power MOSFETs, 11 A, 60-100 V

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75 FAIRCHILD

IRF122

N-CHANNEL POWER MOSFETS

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44 SAMSUNG

IRF122

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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61 INTERSIL

IRF122

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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2 IRF

IRF-122+/-10%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-122+/-10%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY