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IRF640BJ69Z [FAIRCHILD]

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN;
IRF640BJ69Z
元器件型号： IRF640BJ69Z
生产厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用：

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

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PDF文件： 总10页 (文件大小：916K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF640BJ69Z参数
 查看货源

IRF640D1

 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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42 MOTOROLA

IRF640D1

 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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34 MOTOROLA

IRF640FI

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-220VAR

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133 ETC

IRF640FP

 N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

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155 STMICROELECTR

IRF640FPBF

 Power Field-Effect Transistor, 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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2 IRF

IRF640L

 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

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207 IRF

IRF640L

 Power MOSFET

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48 VISHAY

IRF640L

 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 MOTOROLA

IRF640L-102

 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3

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2 VISHAY

IRF640LPBF

 Power MOSFET

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35 VISHAY

IRF640LPBF

 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3

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0 VISHAY

IRF640N

 N-Channel Power MOSFETs 200V, 18A, 0.15ohm

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548 FAIRCHILD

IRF640N

 Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

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3027 IRF

IRF640N

 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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47 MOTOROLA

IRF640N

 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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89 IRF
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