IRF654B [FAIRCHILD]

250V N-Channel MOSFET; 250V N沟道MOSFET

IRF654B


型号：	IRF654B
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	250V N-Channel MOSFET 250V N沟道MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总10页 (文件大小：868K)
下载：	下载PDF数据表文档文件

IRF6601

DirectFET⑩ Power MOSFET(Vdss=20V)

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70 IRF

IRF6601TR1

Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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0 IRF

IRF6601TR1PBF

Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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1 IRF

IRF6602

HEXFET Power MOSFET

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26 IRF

IRF6602

HEXFET Power MOSFET

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47 IRF

IRF6602TR1

HEXFET Power MOSFET

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18 IRF

IRF6602TR1

HEXFET Power MOSFET

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30 IRF

IRF6603

HEXFETPower MOSFET

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34 IRF

IRF6603

HEXFETPower MOSFET

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76 IRF

IRF6603PBF

Power Field-Effect Transistor, 27A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS AND REACH COMPLIANT, MT, ISOMETRIC-3

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1 IRF

IRF6603TR1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 IRF

IRF6604

Power MOSFET

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83 IRF

IRF6604

Power MOSFET

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26 IRF

IRF6604

Power Field-Effect Transistor, 12A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MQ, ISOMETRIC-3

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1 IRF

IRF6604PBF

Power Field-Effect Transistor, 12A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS AND REACH COMPLIANT, MQ, ISOMETRIC-3

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0 IRF

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