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IRF723 [FAIRCHILD]

N-Channel Power MOSFETs, 3.0 A, 350-400 V; N沟道功率MOSFET ， 3.0 A， 350-400 V
IRF723
型号： IRF723
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

N-Channel Power MOSFETs, 3.0 A, 350-400 V
N沟道功率MOSFET ， 3.0 A， 350-400 V
文件： 总5页 (文件大小：169K)
中文：  中文翻译
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相关型号：

IRF723-001

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-001PBF

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-002

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-002PBF

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IRF723-003

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF723-003PBF

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-004

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-005

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-005PBF

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IRF723-006

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IRF723-006PBF

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IRF723-009

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IRF723-009PBF

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-010

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF723-010PBF

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-011

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF723-011PBF

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-012

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF723-013

 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF723-013PBF

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