IRFI530A [FAIRCHILD]

Advanced Power MOSFET; 先进的功率MOSFET
IRFI530A
元器件型号: IRFI530A
生产厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用:

Advanced Power MOSFET
先进的功率MOSFET

PDF文件: 总8页 (文件大小:267K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFI530A参数

IRFI530G

HEXFET POWER MOSFET

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23 IRF

IRFI530G

HEXFET POWER MOSFET

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74 IRF

IRFI530G

Power MOSFET

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19 VISHAY

IRFI530G-002PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-003PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-004PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-005PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-006PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-009PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-011

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-011PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-012PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-013PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-015PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI530G-017PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF