IRFM120ATF [FAIRCHILD]
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRFM120ATF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 晶体 晶体管 开关 脉冲 光电二极管 |
| 文件： | 总7页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFM120A
Advanced Power MOSFET
IEEE802.3af Compatible
FEATURES
BVDSS = 100 V
RDS(on) = 0.2 !
ID = 2.3 A
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V
! Lower RDS(ON) : 0.155 ! (Typ.)
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Drain-to-Source Voltage
Value
100
2.3
Units
VDSS
V
Continuous Drain Current (TA=25%)
Continuous Drain Current (TA=70%)
Drain Current-Pulsed
ID
A
1.84
18
IDM
VGS
EAS
IAR
&
A
V
Gate-to-Source Voltage
"20
123
2.3
Single Pulsed Avalanche Energy
Avalanche Current
'
&
&
(
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
0.24
6.5
*
Total Power Dissipation (TA=25%)
2.4
PD
*
Linear Derating Factor
Operating Junction and
W/%
0.019
TJ , TSTG
- 55 to +150
300
Storage Temperature Range
%
Maximum Lead Temp. for Soldering
TL
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Junction-to-Ambient
Typ.
--
Max.
Units
R$JA
*
52
%/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
N-CHANNEL
POWER MOSFET
IRFM120A
Electrical Characteristics (TA=25% unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=250#A
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/%
V
100 --
--
.BV/.TJ
VGS(th)
ID=250#A
See Fig 7
-- 0.12 --
V
V
V
DS=5V,ID=250#A
2.0
--
--
4.0
100
GS=20V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
--
IGSS
nA
GS=-20V
-- -100
VDS=30V
-
--
--
--
1
#A
IDSS
VDS=100V
10
Drain-to-Source Leakage Current
V
DS=80V,TA=125%
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
V
GS=10V,ID=1.15A
+
+
)
--
--
RDS(on)
0.2
--
--
--
--
--
--
--
--
--
--
--
S
3.12 --
370 480
gfs
Ciss
Coss
Crss
td(on)
tr
VDS=40V,ID=1.15A
VGS=0V,VDS=25V,f =1MHz
110
45
40
40
90
70
22
--
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
95
38
14
14
36
28
16
2.7
7.8
pF
ns
See Fig 5
VDD=50V,ID=9.2A,
RG=18)
td(off)
tf
Turn-Off Delay Time
Fall Time
See Fig 13
+ ,
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
VDS=80V,VGS=10V,
ID=9.2A
nC
Qgs
Qgd
--
See Fig 6 & Fig 12 + ,
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
--
--
--
--
--
--
2.3
18
1.5
--
A
ISM
&
+
VSD
trr
V
--
TJ=25%,IS=2.3A,VGS=0V
TJ=25%,IF=9.2A
ns
#C
98
Qrr
-- 0.34 --
diF/dt=100A/#s
+
Notes ;
& Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
' L=35mH, IAS=2.3A, VDD=25V, RG=27), Starting TJ =25%
( ISD*9.2A, di/dt*300A/#s, VDD*BVDSS , Starting TJ =25%
+ Pulse Test : Pulse Width = 250#s, Duty Cycle * 2%
, Essentially Independent of Operating Temperature
- Adjusted for Cisco
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
1
10
1
10
Bottom : 4.5V
150 oC
0
10
0
25 oC
10
@ Notes:
1. V =0V
GS
@Notes:
2. V =40V
DS
1. 250 sPulseTest
"
- 55 oC
3. 250 s PulseTest
"
2. T = 25 oC
A
-1
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.4
1
10
V
GS = 10 V
0.3
0.2
0.1
0.0
0
10
V
GS = 20 V
@ Notes:
1. VGS =0V
150oC
@Note: T = 25 oC
25 oC
2. 250 s PulseTest
"
J
-1
10
0
10
20
30
40
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
600
400
200
C
iss=C +Cgd (C =shorted)
gs ds
VDS =20V
C
oss=C +C
ds gd
C iss
10
Crss=C
gd
VDS =50V
VDS =80V
C oss
5
0
@Notes:
1. VGS = 0 V
2. f= 1MHz
C rss
@ Notes: I =9.2A
D
00
10
1
0
5
10
15
20
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
@Notes:
1. V =10V
1. V = 0 V
GS
GS
2. I =4.6A
2. I = 250 A
"
D
D
-75 -50 -25
0
25
50
75
100 125 150 175
o
-75 -50 -25
0
25
50
75
100 125 150 175
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Ambient Temperature
2.5
2
10
Operation inThisArea
isLimitedbyRDS(on)
2.0
1.5
1.0
0.5
0.0
10 s
"
1
10
100 s
1ms
"
10ms
100ms
0
10
DC
@Notes:
-1
10
1. T = 25 oC
A
2. T = 150 oC
J
3. SinglePulse
-2
10
-1
0
1
2
25
50
75
100
125
150
10
10
10
10
o
V
DS , Drain-Source Voltage [V]
T , Ambient Temperature [C]
A
Fig 11. Thermal Response
102
101
D=0.5
0.2
@ Notes :
0.1
1. Z!JA(t)=52 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TA=PDM*Z!JA(t)
0.05
0.02
0.01
100
PDM
t1
t2
single pulse
10-4 10-3
10-1
10-5
10-2
10-1
100
101
102
103
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator ”
VGS
Same Type
as DUT
50K!
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
1
2
2
LL
ID
----
EAS
=
LL IAS
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
C
VDD
DUT
VDD
VDS (t)
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by /G
• IS controlled by Duty Factor 0?
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
PACMAN
POP
Power247
PowerTrench
QFET
QS
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
QT Optoelectronics TinyLogic
Quiet Series
RapidConfigure
RapidConnect
TruTranslation
UHC
UltraFET
MSXPro
OCX
â
OCXPro
OPTOLOGIC
Across the board. Around the world.
The Power Franchise
ProgrammableActive Droop
â
â
SILENT SWITCHER VCX
SMARTSTART
OPTOPLANAR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
相关型号：
IRFM120ATF_NL
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4
FAIRCHILD
IRFM150
Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
TEMIC
©2020 ICPDF网 联系我们和版权申明