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元器件品牌
IRFP240B_FP001
[FAIRCHILD]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
元器件型号：
IRFP240B_FP001
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PDF文件：
总8页 (文件大小：695K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFP240B_FP001参数
查看货源
IRFP240FI
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-218VAR
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on line
156
-
115
ETC
IRFP240PBF
HEXFET㈢ Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
211
IRF
IRFP240PBF
Dynamic dV/dt Rating Repetitive Avalanche Rated
Warning
: Undefined variable $rtag in
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on line
156
-
35
KERSEMI
IRFP240PBF
Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
111
VISHAY
IRFP240R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
82
ETC
IRFP240R
20A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
9
RENESAS
IRFP241
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 19A I(D) | TO-247AC
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
51
ETC
IRFP2410
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
76
IRF
IRFP241CF
IRFP241CF
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
NSC
IRFP241R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
13
ETC
IRFP241R
20A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
RENESAS
IRFP242
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 17A I(D) | TO-247AC
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
110
ETC
IRFP242
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
2
SAMSUNG
IRFP242R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
27
ETC
IRFP242R
18A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
1
RENESAS
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