IRFR120T_R4941 [FAIRCHILD]

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA;
IRFR120T_R4941
型号: IRFR120T_R4941
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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IRFR120TR

IRFR120

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19 VISHAY

IRFR120TR

HEXFET POWER MOSFET

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23 IRF

IRFR120TR

HEXFET POWER MOSFET

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44 IRF

IRFR120TR

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR120TR

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

IRFR120TRL

Power MOSFET

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13 VISHAY

IRFR120TRL

IRFR120

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16 VISHAY

IRFR120TRL

Dynamic dV/dt Rating

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9 KERSEMI

IRFR120TRL

Dynamic dV/dt Rating

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8 KERSEMI

IRFR120TRLPBF

Dynamic dV/dt Rating

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4 KERSEMI

IRFR120TRLPBF

Dynamic dV/dt Rating

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15 KERSEMI

IRFR120TRLPBF

Power MOSFET

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30 VISHAY

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8 VISHAY

IRFR120TRLPBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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0 VISHAY

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23 VISHAY