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IRFR214BTM_FP001 [FAIRCHILD]

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3;

IRFR214BTM_FP001


元器件型号：	IRFR214BTM_FP001
生产厂家：	FAIRCHILD SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 开关脉冲晶体管
PDF文件：	总9页 (文件大小：644K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR214BTM_FP001参数

IRFR214PBF

Power MOSFET

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22 VISHAY

IRFR214PBF

HEXFET㈢ Power MOSFET

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43 IRF

IRFR214PBF

Power MOSFET

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9 KERSEMI

IRFR214TR

Power MOSFET

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21 VISHAY

IRFR214TRA

Power MOSFET

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8 KERSEMI

IRFR214TRL

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR214TRLPBF

Power MOSFET

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22 VISHAY

IRFR214TRLPBFA

Power MOSFET

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14 KERSEMI

IRFR214TRPBF

Power MOSFET

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25 VISHAY

IRFR214TRPbFA

Power MOSFET

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11 KERSEMI

IRFR214TRR

Power MOSFET

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19 VISHAY

IRFR214TRR

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR214TRRA

Power MOSFET

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9 KERSEMI

IRFR214TRRPBF

暂无描述

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0 IRF

IRFR214TRRPBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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0 VISHAY

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