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元器件品牌
IRFR234BTM
[FAIRCHILD]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
元器件型号：
IRFR234BTM
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PDF文件：
总9页 (文件大小：637K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFR234BTM参数
查看货源
IRFR234BTM_FP001
Power Field-Effect Transistor, 6.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3
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156
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0
FAIRCHILD
IRFR2405
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A)
Warning
: Undefined variable $rtag in
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221
IRF
IRFR2405
HEXFET® Power MOSFET
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156
-
37
SHENZHENFREES
IRFR2405
Surface Mount (IRFR2405)
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156
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49
KERSEMI
IRFR2405LPBF
Surface Mount (IRFR2405)
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71
IRF
IRFR2405PBF
Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology
Warning
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17
KERSEMI
IRFR2405PBF
Advanced Process Technology
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24
IRF
IRFR2405PBF
Advanced Process Technology
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18
KERSEMI
IRFR2405PBF
HEXFET Power MOSFET
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55
IRF
IRFR2405TR
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 56A I(D) | TO-252AA
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53
ETC
IRFR2405TR
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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0
IRF
IRFR2405TRL
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 56A I(D) | TO-252AA
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35
ETC
IRFR2405TRL
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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156
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0
IRF
IRFR2405TRPBF
Advanced Process Technology
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26
IRF
IRFR2405TRPBF
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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156
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2
IRF
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