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元器件品牌
IRL610
[FAIRCHILD]
Advanced Power MOSFET; 先进的功率MOSFET
元器件型号：
IRL610
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
Advanced Power MOSFET
先进的功率MOSFET
晶体 晶体管 开关 脉冲 局域网
PDF文件：
总7页 (文件大小：237K)
下载文档：
下载PDF数据表文档文件
型号参数：IRL610参数
查看货源
IRL610A
Advanced Power MOSFET
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FAIRCHILD
IRL610AJ69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
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FAIRCHILD
IRL610J69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
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0
FAIRCHILD
IRL610S
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB
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22
ETC
IRL610SR
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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0
FAIRCHILD
IRL610SU
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
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0
FAIRCHILD
IRL611
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB
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16
ETC
IRL611
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
SAMSUNG
IRL620
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
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IRF
IRL620
Power MOSFET
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13
VISHAY
IRL620-002
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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0
INFINEON
IRL620-002
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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0
IRF
IRL620-002PBF
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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0
INFINEON
IRL620-002PBF
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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0
IRF
IRL620-003PBF
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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IRF
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