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元器件品牌
IRLR210
[FAIRCHILD]
ADVANCED POWER MOSFET; 先进的功率MOSFET
元器件型号：
IRLR210
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
ADVANCED POWER MOSFET
先进的功率MOSFET
PDF文件：
总7页 (文件大小：236K)
下载文档：
下载PDF数据表文档文件
型号参数：IRLR210参数
查看货源
IRLR210A
ADVANCED POWER MOSFET
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33
FAIRCHILD
IRLR210A
ADVANCED POWER MOSFET
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156
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24
FAIRCHILD
IRLR210ATM
2.7A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
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156
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0
ROCHESTER
IRLR210ATM
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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156
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0
FAIRCHILD
IRLR211
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-252
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22
ETC
IRLR211
Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Warning
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156
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0
SAMSUNG
IRLR220
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | TO-252
Warning
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42
ETC
IRLR220
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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0
SAMSUNG
IRLR220A
ADVANCED POWER MOSFET
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156
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16
FAIRCHILD
IRLR220A
ADVANCED POWER MOSFET
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156
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73
FAIRCHILD
IRLR220A
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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156
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1
SAMSUNG
IRLR220ATF
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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156
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0
FAIRCHILD
IRLR220ATF
4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Warning
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156
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0
ROCHESTER
IRLR220ATM
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Warning
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156
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0
FAIRCHILD
IRLR221
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-252
Warning
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156
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25
ETC
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