IRLS540A [FAIRCHILD]

Advanced Power MOSFET; 先进的功率MOSFET

IRLS540A


型号：	IRLS540A
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Advanced Power MOSFET 先进的功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总7页 (文件大小：258K)
下载：	下载PDF数据表文档文件

IRLS610

Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS610A

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.5A I(D) | TO-220F

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19 ETC

IRLS610A

Advanced Power MOSFET

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13 FAIRCHILD

IRLS620A

Advanced Power MOSFET

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34 FAIRCHILD

IRLS621

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS624

Power Field-Effect Transistor, 3.2A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS630

Power Field-Effect Transistor, 5.1A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS630A

Advanced Power MOSFET

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28 FAIRCHILD

IRLS631

Power Field-Effect Transistor, 5.1A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS640

Power Field-Effect Transistor, 9A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS640A

Advanced Power MOSFET

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57 FAIRCHILD

IRLS641

Power Field-Effect Transistor, 9A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLSG5653

INTEGRATED SWITCHER

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19 IRF

IRLSG5653

INTEGRATED SWITCHER

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35 IRF

IRLSL3034PBF

HEXFET Power MOSFET

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36 IRF

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