首页 |元器件品牌

J107 [FAIRCHILD]

N-Channel Switch; N沟道开关
J107
型号： J107
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

N-Channel Switch
N沟道开关

开关
文件： 总4页 (文件大小：64K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Discr ete P OWER & Sign a l  
Tech n ologies  
J105  
J106  
J107  
JFTJ105  
G
D
G
TO-92  
G
S
S
SOT-223  
D
N-Channel Switch  
This device is designed for analog or digital switching applications where  
very low On Resistance is mandatory. Sourced from Process 59.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
25  
- 25  
10  
V
V
VGS  
IGF  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J105 / J106 / J107  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
357  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  
N-Channel Switch  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max Units  
OFF CHARACTERISTICS  
V(BR)GSS  
Gate-Source Breakdown Voltage  
- 25  
V
IG = - 10 µA, VDS = 0  
IGSS  
Gate Reverse Current  
VGS = - 15 V, VDS = 0  
VGS = - 15 V, VDS = 0, TA = 100°C  
- 3.0  
- 200  
nA  
nA  
VGS(off)  
Gate-Source Cutoff Voltage  
VDS = 15 V, ID = 10 nA  
J105  
J106  
J107  
- 4.5  
- 2.0  
- 0.5  
- 10  
- 6.0  
- 4.5  
V
V
V
ON CHARACTERISTICS  
IDSS  
Zero-Gate Voltage Drain Current*  
VDS = 15 V, IGS = 0  
J105  
J106  
J107  
J105  
J106  
J107  
500  
200  
100  
mA  
mA  
mA  
Ω
Ω
Ω
Drain-Source On Resistance  
VDS ≤ 0.1 V, VGS = 0  
3.0  
6.0  
8.0  
rDS(on)  
SMALL SIGNAL CHARACTERISTICS  
Drain Gate & Source Gate On  
Capacitance  
VDS = 0, VGS = 10 V, f = 1.0 MHz  
160  
pF  
Cdg(on)  
Csg(on)  
Cdg(off)  
Drain-Gate Off Capacitance  
Source-Gate Off Capacitance  
VDS = 0, VGS = 10 V, f = 1.0 MHz  
VDS = 0, VGS = 10 V, f = 1.0 MHz  
35  
35  
pF  
pF  
Csg(off)  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%  
Typical Characteristics  
Common Drain-Source  
Characteristics  
Common Drain-Source  
Characteristics  
50  
40  
30  
20  
10  
0
200  
0
V
= 0 V  
V
= 0 V  
GS  
-1V  
-2V  
T
= + 25 C  
GS  
A
TYP  
V
= -0.7V  
GS(OFF)  
- 0.1V  
150  
100  
50  
- 0.2V  
- 0.3V  
-3V  
0
T
V
= + 25  
C
-0.4V  
-4V  
-5V  
A
- 0.5V  
TYP  
= -5V  
GS(OFF)  
0
0
1
2
3
4
5
0
0.5  
1
1.5  
2
VDS - DRAIN-SOURCE VOLTAGE(V)  
VDS - DRAIN-SOURCE VOLTAGE(V)  
N-Channel Switch  
(continued)  
Typical Characteristics (continued)  
Parameter Interactions  
Capacitance vs Voltage  
200  
100  
50  
2,000  
1,000  
500  
f=0.1-1.0MHz  
r
@ VDS=100MV, VGS = 0  
DS  
V
@ VDS = 5.0V, ID =3nA  
C
( V  
= 5 V )  
DS  
I
GS(OFF)  
is  
DS S  
20  
10  
5
20  
10  
5
200  
100  
50  
C
( V  
= 0 V )  
DS  
rs  
r
DS  
2
1
20  
10  
1
0.1  
0.2 0.3 0.5  
1
2
3
5
10  
0
-5  
-10  
-15  
-20  
VGS - GATE CUT OFF VOLTAGE (V)  
VGS - GATE-SOURCE VOLTAGE (V)  
Normalized Drain Resistance  
vs Bias Voltage  
On Resistance vs  
Drain Current  
V
= 0  
GS  
V
@5V, 10uA  
20  
10  
5
GS(OFF)  
V
= - 3.0V  
GS(OFF)  
rDS  
---------------  
20  
10  
5
r
=
DSb  
V
GS  
+1250  
C
1 - ----------  
V
GS(OFF)  
+125 0 C  
+250  
C
+250  
C
- 550  
C
1
V
= - 5.0V  
GS(OFF)  
0.5  
1
0
0.2  
0.4  
0.6  
0.8  
1
1
2
3
5
10  
20 30  
50  
100  
V
/ V  
-- NORMALIZED GATE TO SOURCE VOLTAGE (V)  
ID - DRAIN CURRENT (mA)  
GS  
GS(OFF)  
Output Conductance vs  
Transconductance vs  
Drain Current  
Drain Current  
V DG = 5.0V  
T
T
T
= - 55 0  
C
V DG = 10. 0V  
= +25 0  
A
T
C
= +25 0 C  
A
A
= +1250  
C
10V  
5.0V  
f =1.0 k Hz  
A
15V  
20V  
V
GS(OFF)  
10V  
-4.0V  
5.0V  
15V  
20  
10  
5
20  
10  
5
20V  
10V  
15V  
20V  
V
= - 1.0V  
-2.0V  
-1.0V  
GS(OFF)  
T
= +25 0  
C
A
V
= - 3.0V  
= - 5.0V  
GS(OFF)  
f =1.0 K Hz  
V
GS(OFF)  
1
0.1  
1
0.1  
0.2 0.3 0.5  
1
2
3
5
10  
0.2 0.3 0.5  
1
2
3
5
10  
I D - DRAIN CURRENT (mA)  
I
D- DRAIN CURRENT (mA)  
N-Channel Switch  
(continued)  
Typical Characteristics (continued)  
Power Dissipation vs  
Noise Voltage vs  
Ambient Temperature  
Frequency  
350  
300  
250  
200  
150  
100  
50  
20  
V
= 10 V  
DG  
BW = 6.0 Hz @ f = 10Hz, 100 Hz  
= 0.2f @ f > 1.0 k Hz  
TO-92  
15  
10  
5
I
= 1 mA  
D
I
= 10 mA  
D
0
0
0.01 0.03  
0.1  
0.3  
1
3
10  
30  
100  
0
25  
50  
75  
100  
125  
150  
f - FREQUENCY (k Hz)  
TEMPERATURE ( oC)  

相关型号：

J107-18

 Transistor
VISHAY

J107-18-E3

 Transistor
VISHAY

J107-E3

 Transistor
VISHAY

J107D27Z

 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
TI

J107D74Z

 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
TI

J107D75Z

 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
TI

J107E3

 Small size and light weight
CIT

J107E31AS1012VDC.36

 Small size and light weight
CIT

J107E31AS1012VDC.45

 Small size and light weight
CIT

J107E31AS1024VDC.36

 Small size and light weight
CIT

J107E31AS1024VDC.45

 Small size and light weight
CIT

J107E31AS103VDC.36

 Small size and light weight
CIT
©2020 ICPDF网 联系我们和版权申明