J109 [FAIRCHILD]
N-Channel Switch; N沟道开关
| 型号： | J109 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Switch |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
J108
J109
J110
TO-92
G
S
D
N-Channel Switch
This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
25
- 25
V
V
VGS
IGF
10
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
J108 / J109 / J110
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
350
2.8
125
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
357
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
N-Channel Switch
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 25
V
IG = - 10 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = - 15 V, VDS = 0
VGS = - 15 V, VDS = 0, TA = 100°C
- 3.0
- 200
nA
nA
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15 V, ID = 10 nA
J108
J109
J110
- 3.0
- 2.0
- 0.5
- 10
- 6.0
- 4.0
V
V
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
J108
J109
J110
J108
J109
J110
80
40
10
mA
mA
mA
Ω
Ω
Ω
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
8.0
12
18
rDS(on)
SMALL SIGNAL CHARACTERISTICS
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
85
pF
Cdg(on)
Csg(off)
Cdg(off)
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
VDS = 0, VGS = - 10 V, f = 1.0 MHz
15
15
pF
pF
Csg(off)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Parameter Interactions
Common Drain-Source
100
50
1,000
500
100
I
@ V = 5.0V, V
= 0 PULSED
GS
DS
DSS
- 2.0 V
V GS = 0 V
r
@ V
= 100mV, V = 0
DS
GS
DS
80
V
@ V
= 5.0V, I = 3.0 nA
D
DS
GS(off)
- 1.0 V
- 3.0 V
60
40
20
0
r DS
10
5
100
50
- 4.0 V
T
= 25°C
A
I DSS
TYP
V
= - 5.0 V
GS(off)
- 5.0 V
10
_ 0.1
_ 0.5
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
_ 1
_ 5
_ 10
0
0.4
0.8
1.2
1.6
2
VDS - DRAIN-SOURCE VOLTAGE (V)
N-Channel Switch
(continued)
Typical Characteristics (continued)
Common Drain-Source
Common Drain-Source
100
50
40
30
20
10
0
T
= 25°C
f = 0.1 - 1.0 MHz
A
TYP
V
= - 0.7 V
GS(off)
C
(V
= 5.0V)
DS
iss
V GS = 0 V
10
C
(V
= 0 )
rss
DS
- 0.1 V
- 0.2 V
- 0.5 V
- 0.4 V
- 0.3 V
0
-4
-8
-12
-16
-20
0
1
2
3
4
5
VGS - GATE-SOURCE VOLTAGE (V)
VDS- DRAIN-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
Noise Voltage vs Frequency
100
V
= 10V
DG
100
50
50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
µ
@ 5.0V, 10 A
V
GS(off)
r DS
VGS
20
10
5
rDS
=
_____
1 -
10
5
VGS(off)
I
= 1.0 mA
D
I
= 10 mA
D
2
1
1
0
0.2
0.4
0.6
0.8
1
0.01 0.03 0.1
0.5
1
2
10
100
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
f - FREQUENCY (kHz)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Switching Turn-On Time
vs Drain Current
10
50
40
30
20
10
0
T
= 25°C
= 1.5V
A
V
DD
8
6
4
2
0
V
V
V
=
=
=
- 8.5V
- 5.5V
- 3.5V
GS(off)
GS(off)
GS(off)
V
= - 12V
GS(off)
I
= 30 mA
D
T
= 25°C
= 1.5V
A
I
= 10 mA
D
V
DD
V
= - 12V
GS(off)
0
-2
-4
-6
-8
-10
0
5
10
15
20
25
VGS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
ID - DRAIN CURRENT (mA)
N-Channel Switch
(continued)
Typical Characteristics (continued)
On Resistance vs Drain Current
100
Output Conductance
vs Drain Current
V
= 0
100
10
1
GS
50
V
= 5.0V
10V
DG
V
= - 3.0V
GS(off)
125°C
5.0V
10V
V
15V
GS(off)
20V
125°C
- 4.0V
10
5
5.0V
15V
10V
25°C
20V
15V
- 2.0V
- 55°C
= - 5.0V
20V
25°C
V
T
= 25°C
GS(off)
A
f = 1.0 kHz
- 1.0V
1
1
10
I D - DRAIN CURRENT (mA)
100
0.1
1
10
I D - DRAIN CURRENT (mA)
Power Dissipation vs
Ambient Temperature
Transconductance
vs Drain Current
350
300
250
200
150
100
50
100
10
1
T
T
T
=
- 55°C
= 25°C
125°C
T
V
= 25°C
A
A
A
A
= 10V
DG
TO-92
=
f = 1.0 kHz
V
V
V
=
=
=
- 1.0V
- 3.0V
- 5.0V
GS(off)
GS(off)
GS(off)
0
0.1
1
10
0
25
50
75
100
125
150
TEMPERATURE ( oC)
ID - DRAIN CURRENT (mA)
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