J110_NL [FAIRCHILD]
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN;
| 型号： | J110_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J108/J109/J110/MMBFJ108
N-Channel Switch
3
•
This device is designed for digital switching
applications where very low on resistance is
mandatory.
Sourced from Process 58.
2
•
TO-92
1. Drain 2. Source 3. Gate
1
SuperSOT-3
Marking: I8
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * T =25°C unless otherwise noted
A
Symbol
Parameter
Value
25
Units
V
V
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
DG
GS
-25
V
I
10
mA
°C
GF
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
Gate-Source Breakdwon Voltage
Gate Reverse Current
I
= -10µA, V = 0
-25
V
(BR)GSS
GSS
G
DS
I
V
V
= -15V, V = 0
-3.0
-200
nA
nA
GS
GS
DS
= -15V, V = 0, T = 100°C
DS
A
V
(off)
Gate-Source Cutoff Voltage
V
= 15V, I = 10nA
108
109
110
-3.0
-2.0
-0.5
-10
-6.0
-4.0
V
V
V
GS
DS
D
On Characteristics
I
Zero-Gate Voltage Drain Current *
V
V
= 15V, I = 0
108
109
110
80
40
10
mA
mA
mA
DSS
DS
DS
GS
r
(on)
Drain-Source On Resistance
≤ 0.1V, V = 0
108
109
110
8.0
12
18
Ω
Ω
Ω
DS
GS
Small Signal Characteristics
C
C
(on)
Drain Gate & Source Gate On
Capacitance
V
= 0, V = 0, f = 1.0MHz
85
pF
dg
DS
GS
(off)
sg
dg
C
C
(on)
(off)
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
V
V
= 0, V = -10, f = 1.0MHz
15
15
pF
pF
DS
DS
GS
= 0, V = -10, f = 1.0MHz
sg
GS
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Thermal Characteristics T =25°C unless otherwise noted
A
Max.
Symbol
Parameter
Units
J108 - 110
*MMBFJ108
P
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
125
357
°C/W
°C/W
θJC
θJA
Thermal Resistance, Junction to Ambient
556
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Typical Characteristics
100
50
1,000
500
100
IDSS @ VDS = 5.0V, VGS = 0 PULSED
- 2.0 V
V GS = 0 V
rDS @ VDS = 100mV, VGS = 0
80
V GS(off) @ VDS = 5.0V, I = 3.0 nA
D
- 1.0 V
- 3.0 V
60
40
20
0
r DS
10
5
100
50
- 4.0 V
= 25
T
°C
A
I DSS
TYP
V
GS(off)
= - 5.0 V
- 5.0 V
10
_ 0.1
_ 0.5
_ 1
_ 5
_ 10
0
0
0
0.4
0.8
1.2
1.6
2
-20
1
VDS - DRAIN-SOURCE VOLTAGE (V)
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
Figure 1. Common Drain-Source
Figure 2. Parameter Interactions
50
40
30
20
10
0
100
10
= 25°C
T
f = 0.1 - 1.0 MHz
A
TYP
V
= - 0.7 V
GS(off)
C
(V
= 5.0V)
DS
iss
V GS = 0 V
C
(V
= 0 )
rss
DS
- 0.1 V
- 0.2 V
- 0.5 V
- 0.4 V
- 0.3 V
-4
-8
-12
-16
0
1
2
3
4
5
VGS - GATE-SOURCE VOLTAGE (V)
VDS - DRAIN-SOURCE VOLTAGE (V)
Figure 3. Common Drain-Source
Figure 4. Common Drain-Source
100
50
V
= 10V
DG
100
50
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
V
@ 5.0V, 10 µA
GS(off)
= 0.21 @ f ≥ 1.0 kHz
rDS
20
10
5
rDS
=
VGS
_____
10
5
1 -
VGS(off)
I
= 1.0 mA
D
I
= 10 mA
D
2
1
1
0.2
0.4
0.6
0.8
0.01 0.03 0.1
0.5
1
2
10
100
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
f - FREQUENCY (kHz)
Figure 5. Normalized Drain Resistance vs
Bias Voltage
Figure 6. Noise Voltage vs Frequency
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Typical Characteristics(Continued)
50
40
30
20
10
0
10
캜
T
= 25°C
A
V
= 1.5V
DD
8
6
4
2
0
V
V
V
=
=
=
- 8.5V
- 5.5V
- 3.5V
GS(off)
GS(off)
GS(off)
V
= - 12V
GS(off)
I
= 30 mA
D
캜
= 25
°C
T
A
I
= 10 mA
D
V
= 1.5V
DD
V
= - 12V
GS(off)
0
-2
-4
-6
-8
-10
0
5
10
15
20
25
VGS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
I D - DRAIN CURRENT (mA)
Gof
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Figure 8. Switching Turn-On Time vs Drain Current
100
V
= 0
100
GS
50
V
= 5.0V
10V
DG
V
= - 3.0V
GS(off)
캜
125°C
5.0V
15V
V
GS(off)
20V
캜
125°C
- 4.0V
10V
10
5
5.0V
10
1
15V
10V
캜
25°C
20V
15V
- 2.0V
캜
- 55°C
20V
캜
25
°C
V
= - 5.0V
캜
= 25
T
°C
GS(off)
A
- 1.0V
f = 1.0 kHz
1
1
10
I D - DRAIN CURRENT (mA)
100
0.1
1
10
I D - DRAIN CURRENT (mA)
Figure 9. On Resistance vs Drain Current
Figure 10. Output Conductance vs Drain Current
100
7 00
6 00
= - 55°C
캜
T
T
T
T
= 25°C
A
A
A
A
캜
= 25°C
V
= 10V
DG
°C
=
125
f = 1.0 kHz
5 00
T O -9 2
S u p e rS O T -3
4 00
3 00
2 00
1 00
0
10
V
=
=
=
- 1.0V
- 3.0V
- 5.0V
GS(off)
GS(off)
GS(off)
V
V
1
0
2 5
5 0
7 5
1 00
1 25
1 50
0.1
1
10
o
ID - DRAIN CURRENT (mA)
T E M P E R A T U R E
( C )
Figure 11. Transconductance vs Drain Current
Figure 12. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Package Dimensions (Continued)
SuperSOT-3
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
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Across the board. Around the world.™
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DISCLAIMER
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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