J111-D28Z [FAIRCHILD]
Transistor;型号: | J111-D28Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Transistor |
文件: | 总13页 (文件大小:488K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBFJ111
MMBFJ112
MMBFJ113
J111
J112
J113
G
S
TO-92
G
S
SOT-23
Mark: 6P / 6R / 6S
D
D
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
35
- 35
V
V
VGS
Gate-Source Voltage
5
IGF
Forward Gate Current
50
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
J111-113
*MMBFJ111-113
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
125
350
2.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
J111/112/113/MMBFJ111/112/113, Rev
A
N-Channel Switch
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 35
V
IG = - 1.0 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = - 15 V, VDS = 0
- 1.0
nA
VGS(off)
Gate-Source Cutoff Voltage
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
V
V
V
VDS = 5.0 V, ID = 1.0 µA
111
112
113
ID(off)
Drain Cutoff Leakage Current
VDS = 5.0 V, VGS = - 10 V
1.0
nA
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
20
5.0
2.0
mA
mA
mA
V
DS = 15 V, IGS = 0
111
112
113
Drain-Source On Resistance
30
50
100
VDS ≤ 0.1 V, VGS = 0
111
112
113
Ω
Ω
Ω
rDS(on)
SMALL-SIGNAL CHARACTERISTICS
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
28
pF
Cdg(on)
Csg(on)
Cdg(off)
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
VDS = 0, VGS = - 10 V, f = 1.0 MHz
5.0
5.0
pF
pF
Csg(off)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
Typical Characteristics
Common Drain-Source
Parameter Interactions
10
100
50
100
T
V
= 25°C
A
V GS = 0 V
TYP
= - 2.0 V
GS(off)
rDS
- 0.2 V
8
6
4
2
0
50
- 0.4 V
- 0.6 V
g
20
10
5
20
10
5
fs
- 0.8 V
IDSS , gfs @ VDS = 15V,
V GS= 0 PULSED
rDS @ 1.0 mA, VGS = 0
VGS(off) @ VDS = 15V,
- 1.0 V
- 1.2 V
- 1.4 V
I
= 1.0 nA
I DSS
D
_0.5
_1
_ 2
_ 5
_ 10
0
0.4
0.8
1.2
1.6
2
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
VDS - DRAIN-SOURCE VOLTAGE (V)
N-Channel Switch
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Characteristics
40
16
12
8
V
= - 3.0 V
V
= - 1.6 V
GS(off)
- 55°C
GS(off)
- 55°C
V DS = 15 V
25°C
25°C
30
20
10
0
125°C
125°C
V
= - 2.0 V
GS(off)
125°C
25°C
- 55°C
V
= - 1.1 V
GS(off)
125°C
25°C
V DS = 15 V
4
- 55°C
0
0
-1
-2
-3
0
-0.5
-1
-1.5
VGS- GATE-SOURCE VOLTAGE (V)
VGS- GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
Transfer Characteristics
30
20
10
0
30
20
10
0
V
= - 3.0 V
GS(off)
- 55°C
V
= - 1.6 V
GS(off)
- 55°C
25°C
125°C
25°C
V
= - 2.0 V
125°C
GS(off)
- 55°C
25°C
125°C
V
= - 1.1 V
GS(off)
- 55°C
25°C
125°C
VDS = 15 V
V DS = 15 V
-0.5
0
-1
-2
-3
0
-1
-1.5
5
VGS- GATE-SOURCE VOLTAGE (V)
VGS- GATE-SOURCE VOLTAGE (V)
On Resistance vs Drain Current
Normalized Drain Resistance
vs Bias Voltage
100
125°C
V
GS(off)
100
50
V
@ 5.0V, 10 µA
TYP = - 2.0V
GS(off)
50
25°C
125°C
- 55°C
rDS
V
20
10
5
rDS
=
GS(off)
VGS
______
1 -
TYP = - 7.0V
VGS(off)
20
10
25°C
r
@ V
= 0
GS
DS
2
1
- 55°C
0
0.2
0.4
0.6
0.8
1
1
2
5
10
20
50
100
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
I D - DRAIN CURRENT (mA)
N-Channel Switch
(continued)
Typical Characteristics (continued)
Transconductance
vs Drain Current
Output Conductance
vs Drain Current
100
100
10
1
T
= 25°C
A
T
= 25°C
V
= 5.0V
A
DG
5.0V
V
= 15V
DG
10V
15V
20V
f = 1.0 kHz
5.0V
10V
15V
f = 1.0 kHz
10V
15V
20V
V
= - 5.0V
GS(off)
20V
V
= - 1.4V
10
GS(off)
V
= - 2.0V
V
= - 3.0V
GS(off)
GS(off)
V
= - 0.85V
GS(off)
0.1
1
0.01
0.1
I D - DRAIN CURRENT (mA)
10
0.1
1
10
I D - DRAIN CURRENT (mA)
Capacitance vs Voltage
Noise Voltage vs Frequency
100
10
1
100
50
V
= 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
f
= 0.1 - 1.0 MHz
10
5
C
(V
= 0)
DS
is
I
= 1.0 mA
D
C
(V
= 20)
DS
is
I
= 10 mA
D
C
(V
= 0)
DS
rs
1
0.01
1
10
100
0
-4
-8
-12
-16
-20
f - FREQUENCY (kHz)
VGS - GATE-SOURCE VOLTAGE (V)
Noise Voltage vs Current
Power Dissipation vs
Ambient Temperature
100
10
1
V
= 15V
DG
700
600
500
400
300
200
100
0
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
TO-92
SOT-23
f = 10 kHz
f = 100 kHz
0.01
0.1
1
10
0
25
50
75
100
125
150
I
- DRAIN CURRENT (mA)
D
TEMPERATURE (oC)
N-Channel Switch
(continued)
Typical Characteristics (continued)
Switching Turn-On Time
vs Gate-Source Voltage
Switching Turn-Off Time
vs Drain Current
25
100
80
60
40
20
0
T
V
V
= 25°C
V
= 3.0V
A
DD
t
r (ON)
V
= -2.2V
GS(off)
= 3.0V
= -12V
t
APPROX. I INDEPENDENT
D
r
DD
GS
20
15
10
5
V
= 3.0V
GS(off)
- 4.0V
- 7.5V
t
(off)
T
= 25°C
A
t
DEVICE
d(off)
I
= 6.6 mA
V
INDEPENDENT
D
GS(off)
2.5 mA
- 6.0V
t
d (ON)
V
= -12V
GS
t
d(off)
0
0
-2
-4
-6
-8
-10
0
2
4
6
8
10
VGS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
I D - DRAIN CURRENT (mA)
5
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
QTY:
10000
LOT:
CBVK741B019
NSID:
D/C1:
SPEC:
PN2222N
FSCINT
Label
SPEC REV:
QA REV:
D9842
B2
5 Reels per
Intermediate Box
(FSCINT)
Customized
Label
F63TNR Label sample
LOT: CBVK741B019
F63TNR
Label
QTY: 2000
SPEC:
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Customized
Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
375mm x 267mm x 375mm
Intermediate Box
TO-92 TNR/AMMO PACKING INFROMATION
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Packing
Style
A
Quantity
2,000
EOL code
D26Z
Reel
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
FSCINT
Label
Unit weight
Reel weight with components
Ammo weight with components = 1.02 kg
= 0.22 gm
= 1.04 kg
Max quantity per intermediate box = 10,000 units
5 Ammo boxes per
Intermediate Box
327mm x 158mm x 135mm
Immediate Box
Customized
Label
F63TNR
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
(TO-92) BULK PACKING INFORMATION
BULK OPTION
See Bulk Packing
Information table
EOL
CODE
LEADCLIP
DESCRIPTION
QUANTITY
2.0 K / BOX
DIMENSION
J18Z
TO-18 OPTION STD
TO-5 OPTION STD
NO LEAD CLIP
Anti-static
Bubble Sheets
J05Z
NO LEAD CLIP
NO LEADCLIP
1.5 K / BOX
2.0 K / BOX
FSCINT Label
NO EOL
CODE
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STRAIGHT FOR: PKG 92,
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SERIES), 96
L34Z
TO-92 STANDARD
STRAIGHT FOR: PKG 94
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2.0 K / BOX
(PROELECTRON SERIES
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
BCXXX, BFXXX, BSRXXX),
97, 98
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration: Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Hd
P
Pd
b
Ha
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
PO
b
0.098 (max)
Base of Package to Lead Bend
Component Height
Ha
HO
H1
Pd
Hd
P
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
User Direction of Feed
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
t1
W
TO-92 Reel
Configuration: Figure 5.0
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
WO
W1
W2
DO
S
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Sprocket Hole Diameter
Lead Spring Out
Note : All dimensions are in inches.
ELECTROSTATIC
SENSITIVE DEVICES
D4
D1
ITEM DESCRIPTION
SYSMBOL MINIMUM
MAXIMUM
D2
Reel Diameter
D1
D2
D2
D3
D4
W1
W2
W3
13.975
1.160
0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
2.090
F63TNR Label
Arbor Hole Diameter (Standard)
(Small Hole)
Customized Label
Core Diameter
Hub Recess Inner Diameter
Hub Recess Depth
Flange to Flange Inner Width
Hub to Hub Center Width
W1
W3
W2
Note: All dimensions are inches
D3
July 1999, Rev. A
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
January 2000, Rev. B
©2000 Fairchild Semiconductor International
SOT-23 Tape and Reel Data
SOT-23 Packaging
Configuration: Figure 1.0
Packaging Description:
Customized Label
SOT-23 parts are shipped in tape. The carrier tape is
made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark bluein color and is madeof polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Antistatic Cover Tape
These full reels areindividually labeled and placed inside
a
standard intermediate made of recyclable corrugated
brown paper with aFairchild logo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comesin different sizes depending on the number of parts
shipped.
Human Readable
Label
Embossed
CarrierTape
3P
3P
3P
3P
SOT-23 PackagingInformation
Standard
(no flow code)
PackagingOption
D87Z
Packagingtype
TNR
TNR
10,000
13"
SOT-23 Unit Orientation
Qty per Reel/Tube/Bag
Reel Size
3,000
7" Dia
Box Dimension (mm)
Max qty per Box
187x107x183 343x343x64
343mmx 342mmx 64mm
Intermediate box for L87Z Option
Human Readable Label
24,000
0.0082
0.1175
30,000
0.0082
0.4006
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Human Readable Label sample
Human readable
Label
187mmx 107mmx 183mm
SOT-23 Tape Leader and Trailer
IntermediateBox forStandard Option
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
300mm minimumor
75 empty pockets
500mm minimumor
125 empty pockets
September 1999, Rev. C
©2000 Fairchild Semiconductor International
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
Dimensions are in millimeter
E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
5.2
Tc
Pkg type
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
0.06
+/-0.02
+/-0.125
+/-0.3
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT-23 Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
8mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
September 1998, Rev. A1
©2000 Fairchild Semiconductor International
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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Obsolete
Full Production
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Rev. H1
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ALLEGRO
J111-STYLE-C
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
J111-STYLE-E
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
J111-STYLE-G
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
J111-T/R
TRANSISTOR 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal
NXP
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