J13009-2 [FAIRCHILD]
High Voltage Fast-Switching NPN Power Transistor;
| 型号： | J13009-2 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Fast-Switching NPN Power Transistor |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted (notes_1)
C
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
400
9
12
V
Collector Current (DC)
Collector Current (Pulse)
Base Current
A
ICP
24
A
IB
6
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
100
150
-65 ~ 150
W
°C
°C
TJ
TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item (notes_2)
FJP13009
Device Marking
J13009
Package
TO-220
Packing Method
Qty(pcs)
1,200
Bulk
TUBE
TUBE
FJP13009H2TU
FJP13009TU
Notes_2 :
J130092
TO-220
1,000
J13009
TO-220
1,000
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
©2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
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Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
VCEO(sus)
IEBO
Parameter
Conditions
Min.
Typ.
Max Units
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
IC = 10mA, IB = 0
400
V
VEB = 9V, IC = 0
1
mA
hFE
* DC Current Gain
VCE = 5V, IC = 5A (hFE1
VCE = 5V, IC = 8A
)
8
6
40
30
VCE(sat)
VBE (sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1
1.5
3
V
V
V
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
1.2
1.6
V
V
Cob
fT
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 8A
180
pF
MHz
µs
4
tON
tSTG
tF
1.1
3
IB1 = - IB2 = 1.6A, RL = 15,6Ω
Storage Time
µs
Fall Time
0.7
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
h
Classification
FE
Classification
H1
H2
hFE1
8 ~ 17
15 ~ 28
2
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FJP13009 Rev. B
Typical Performance Characteristics
10
100
IC = 3 IB
VCE = 5V
VBE(sat)
1
10
0.1
VCE(sat)
0.01
0.1
1
0.1
1
10
100
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
1000
100
1000
VCC=125V
IC=5IB
100
10
1
tR
tD, VBE(off)=5V
10
0.1
1
10
100
0.1
1
10
100
1000
VCB[V], COLLECTOR BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
10
VCC=125V
IC=5IB
tSTG
1000
1
0.1
0.01
tF
100
0.1
1
10
100
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Forward Bias Safe Operating Area
3
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FJP13009 Rev. B
Typical Performance Characteristics (Continued)
100
120
100
80
60
40
20
0
Vcc=50V,
I
B1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
4
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FJP13009 Rev. B
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
–0.05
ø3.60 0.10
(45
°
)
1.27 0.10
1.52 0.10
0.80 0.10
2.54TYP
+0.10
–0.05
0.50
2.40 0.20
2.54TYP
[2.54 0.20
]
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
5
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FJP13009 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an
exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I24
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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