J211 [FAIRCHILD]
N-Channel RF Amplifier; N通道射频放大器
| 型号： | J211 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel RF Amplifier |
| 文件： | 总6页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBFJ210
MMBFJ211
MMBFJ212
J210
J211
J212
G
S
TO-92
G
S
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain
are interchangeable
D
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Absolute Maximum Ratings*
TA= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
25
- 25
V
V
VGS
Gate-Source Voltage
IGF
Forward Gate Current
10
mA
5
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Max
Symbol
Characteristic
Units
J210-212
*MMBFJ210-212
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
350
2.8
125
225
1.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
J210/J211/J212/MMBFJ210/J211/J212, Rev A
N-Channel RF Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 25
V
IG = 1.0 mA, V DS = 0
VGS = 15 V, VDS = 0
VDS = 15 V, ID = 1.0 nA
IGSS
Gate Reverse Current
- 100
pA
VGS(off)
Gate-Source Cutoff Voltage
210
211
212
-1.0
- 2.5
- 4.0
-3.0
- 4.5
- 6.0
V
V
V
ON CHARACTERISTICS
210
211
212
ID S S
Zero-Gate Voltage Drain Current*
2.0
7.0
15
1 5
2 0
4 0
m A
m A
m A
V D S = 15 V, V G S = 0
SMALL SIGNAL CHARACTERISTICS
Common Source Forward
Transconductance
VDS = 15 V, V GS = 0, f = 1.0 kHz
gfs
210
211
212
4000
6000
7000
12,000
12,000
12,000
mmhos
mmhos
mmhos
mmhos
Common Source Output
Conductance
VDS = 15 V, V GS = 0, f = 1.0 kHz
200
goss
*PulseTest: Pulse Width £ 300 mS
Typical Characteristics
Parameter Interactions
Common Drain-Source
N-Channel RF Amplifier
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Characteristics
Noise Voltage vs. Frequency
Leakage Current vs. Voltage
5
Output Conductance
vs. Drain Current
Transconductance vs.
Drain Current
N-Channel RF Amplifier
(continued)
Typical Characteristics (continued)
Capacitance vs. Voltage
Common Source Characteristics
Input Admittance
Forward Transadmittance
Output Admittance
Reverse Transadmittance
N-Channel RF Amplifier
(continued)
Common Gate Characteristics
Input Admittance
Forward Transadmittance
Reverse Transadmittance
Output Admittance
5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
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