K08PN40 [FAIRCHILD]
TRIAC (Silicon Bidirectional Thyristor); 双向可控硅（硅双向晶闸管）
| 型号： | K08PN40 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | TRIAC (Silicon Bidirectional Thyristor) |
| 文件： | 总7页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2006
FKN08PN40
tm
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
3
1
1: T
2: Gate
3: T
1
2
2
TO-92
1 2 3
Absolute Maximum Ratings
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
Rating
Units
VDRM
VRRM
Peak Repetitive Off-State Voltage
400
V
Sine Wave 50 to 60Hz, Gate Open
IT (RMS)
RMS On-State Current
Commercial frequency, sine full wave
0.8
A
360° conduction, Tc= 70 ℃
ITSM
Surge On-State Current
Sinewave 1 full cycle, peak value,
non-repetitive
50Hz
60Hz
8
9
A
A
I2t
I2t for Fusing
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=8.4ms
0.33
A2s
PGM
PG (AV)
VGM
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
5
W
W
V
0.1
5
Peak Gate Current
1
A
TJ
Junction Temperature
Storage Temperature
- 40 ~ 125
- 40 ~ 125
°C
°C
TSTG
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case (note1)
Value
40
Units
RθJC
°C/W
RθJA
Thermal Resistance, Junction to Ambient (note2)
°C/W
160
Note1: Infinite cooling condition.
Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
©2006 Fairchild Semiconductor Corporation
FKN08PN40 Rev. A
1
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Electrical Characteristics
T = 25°C unless otherwise noted
C
Min.
Typ.
Max.
Units
Symbol
Parameter
Test Condition
I
I
Repetieive Peak Off-State Current
V
/V applied
-
-
100
µA
DRM
RRM
DRM RRM
V
On-State Voltage
T =25°C, I =1.12A
-
-
1.8
V
TM
C
TM
Instantaneous measurement
I
II
III
I
T2(+), Gate (+)
-
-
-
-
-
-
-
-
-
-
-
-
2.0
2.0
2.0
5
V
V
Gate Trigger Voltage
V =12V, R =100Ω
D L
V
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
-
GT
-
V
-
-
mA
mA
mA
V
Gate Trigger Current
V =12V, R =100Ω
D L
I
II
III
5
GT
-
5
V
Gate Non-Trigger Voltage
T =125°C, V =1/2V
DRM
0.2
-
-
GD
J
D
I
I
Holding Current
Latching Current
(I, II,III)
V
= 12V, I = 200mA
15
15
20
-
mA
mA
mA
V/µs
H
D
D
TM
I, III
II
V
= 12V, I = 10mA
-
L
G
-
dv/dt(s)
dv/dt(c)
Critical Rate of Rise of
Off-State Voltag
V
= 63% Rated, T = 125°C,
20
DRM
j
Exponential Rise
Critical-Rate of Rise of Off-State Com-
mutating Voltage (di/dt=-0.7A/mS)
3.0
-
-
V/µs
Commutation dv/dt Test
VDRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test Condition
FKN08PN40
1. Junction Temperature
TJ=125°C
2. Rate of decay of on-state
Supply Voltage
Time
commutating current (di/dt)C
3. Peak off-state voltage
VD = 200V
(di/dt)
C
Main Current
Main Voltage
Time
Time
(dv/dt)
C
V
D
2
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FKN08PN40 Rev. A
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
(+) T2
(-) I
GATE
(+) I
GT
GATE
Quadrant II
Quadrant I
GT
T1
T1
I
-
+ I
GT
GT
(-) T2
(-) T2
(-) I
GT
GATE
(+) I
GT
GATE
Quadrant III
Quadrant IV
T1
T1
-
T2 Negative
Package Marking and Ordering Information
Device Marking
Device
Package
Packing
Tape Width
Quantity
K08PN40
FKN08PN40
TO-92
Bulk
--
--
3
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FKN08PN40 Rev. A
Typical Performance Characteristics
Figure 1. On-State Characteristics
Figure 2. Power Dissipation
1.2
1.0
0.8
DC
TJ=125 o
C
180o
TJ=25 o
C
120o
1
0.6
0.4
0.2
0.0
90o
60o
30o
0.8
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
1.0
VTM[V], On-State Voltage
ITRMS[A], On-State Current
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current
vs Junction Temperature
6
5
4
3
2
1
0
30o
120
110
60o
90o
Q3
Q2
100
120o
180o
90
DC
Q1
80
70
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40
0
40
80
120
TJ[oC], Junction Temperature
ITRMS[A], On-State Current
Figure5. Typical Gate Voltage
vs Junction Temperarure
Figure6. Typical Latching Currrent
vs Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
6
4
Q3
Q3
Q1
2
Q1
Q2
0
-40
0
40
80
120
-40
0
40
80
120
TJ[oC], Junction Temperature
TJ[oC], Junction Temperature
4
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FKN08PN40 Rev. A
Typical Performance Characteristics (Continued)
Figure7. Typical Holding Current
vs Junction Temperature
Figure8. Junction to Case Thermal Resistance
5
50
40
30
20
10
0
4
3
Q3
2
Q1
1
Q2
0
-40
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
0
40
80
120
TJ[oC], Junction Temperature
Time, [S]
5
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FKN08PN40 Rev. A
Package Dimension
TO-92
+0.25
–0.15
4.58
0.46 0.10
+0.10
–0.05
1.27TYP
[1.27 0.20
1.27TYP
[1.27 0.20
0.38
]
]
3.60 0.20
(R2.29)
6
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FKN08PN40 Rev. A
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intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Obsolete
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
7
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FKN08PN40 Rev. A
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