KA1M0680RB-TU [FAIRCHILD]

Fairchild Power Switch(FPS); 飞兆功率开关( FPS )
KA1M0680RB-TU
型号: KA1M0680RB-TU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Fairchild Power Switch(FPS)
飞兆功率开关( FPS )

开关 局域网
文件: 总12页 (文件大小:147K)
中文:  中文翻译
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www.fairchildsemi.com  
KA1M0680B/KA1M0680RB/  
KA1H0680B/KA1H0680RFB  
Fairchild Power Switch(FPS)  
Features  
Description  
• Precision fixed operating frequency  
• KA1M0680B,KA1M0680RB (67KHz)  
• KA1H0680B,KA1H0680RFB (100KHz)  
• Pulse by pulse over current limiting  
• Over load protection  
• Over voltage protection (Min. 23V)  
• Internal thermal shutdown function  
• Under voltage lockout  
• Internal high voltage sense FET  
• Latch up mode (KA1M0680B,KA1H0680B)  
• Auto restart (KA1M0680RB,KA1H0680RFB)  
• Soft start  
The Fairchild Power Switch(FPS) product family is specially  
designed for an off-line SMPS with minimal external  
components. The Fairchild Power Switch(FPS) consist of high  
voltage power SenseFET and current mode PWM controller IC.  
PWM controller features integrated fixed oscillator, under  
voltage lock out, leading edge blanking, optimized gate turn-on/  
turn-off driver, thermal shut down protection, over voltage  
protection, temperature compensated precision current sources  
for loop compensation and fault protection circuit. compared to  
discrete MOSFET and controller or R  
CC  
switching converter  
solution, a Fairchild Power Switch(FPS) can reduce total  
component count, design size, weight and at the same time  
increase & efficiency, productivity, and system reliability. It has  
a basic platform well suited for cost effective design in either a  
flyback converter or a forward converter.  
TO-3PF-5L  
TO-3P-5L  
1
1
1.DRAIN 2.GND 3.V  
4.FB 5.Soft Start  
CC  
Internal Block Diagram  
#3 V  
CC  
#1 DRAIN  
32V  
5V  
Vref  
Internal  
bias  
SFET  
Good  
logic  
#5 Soft Start  
OSC  
5V  
S
R
Q
#4 FB  
L.E.B  
2.5R  
5µA  
1mA  
9V  
+
1R  
0.1V  
+
S
R
#2 GND  
7.5V  
25V  
Q
Thermal S/D  
OVER VOLTAGE S/D  
+
Power on reset  
Rev.1.0.2  
©2001 Fairchild Semiconductor Corporation  
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Absolute Maximum Ratings  
Parameter  
Maximum Drain voltage (1)  
Symbol  
Value  
800  
Unit  
V
V
D,MAX  
Drain Gate voltage (R =1M)  
V
DGR  
800  
V
GS  
Gate source (GND) voltage  
Drain current pulsed (2)  
Single pulsed avalanche energy (3)  
Avalanche current (4)  
V
±30  
V
GS  
DM  
I
24.0  
455  
A
DC  
E
I
mJ  
A
AS  
16  
AS  
Continuous drain current (T =25°C)  
I
I
6.0  
A
C
D
D
DC  
DC  
V
Continuous drain current (T =100°C)  
4.0  
A
C
Maximum Supply voltage  
Input voltage range  
V
30  
CC,MAX  
V
0.3 to V  
150  
V
FB  
SD  
P
W
W/°C  
°C  
D
Total power dissipation  
Derating  
1.21  
Operating ambient temperature  
Storage temperature  
T
25 to +85  
A
T
55 to +150  
°C  
STG  
Notes:  
1. Tj=25°C to 150°C  
2. Repetitive rating: Pulse width limited by maximum junction temperature  
3. L=24mH, V =50V, R =25, starting Tj=25°C  
DD  
G
4. L=13µH, starting Tj=25°C  
2
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Electrical Characteristics (SFET part)  
(Ta=25°C unless otherwise specified)  
Parameter  
Symbol  
BV  
Condition  
Min.  
Typ. Max. Unit  
Drain source breakdown voltage  
V
=0V, I =50µA  
800  
-
-
V
DSS  
GS  
D
V
V
=Max., Rating,  
=0V  
DS  
GS  
-
-
-
50  
µA  
Zero gate voltage drain current  
I
DSS  
V
V
=0.8Max., Rating,  
DS  
-
200  
µA  
=0V, T =125°C  
GS  
C
Static drain source on resistance (note)  
Forward transconductance (note)  
Input capacitance  
R
V
V
=10V, I =4.0A  
D
-
1.6  
2.5  
2.0  
DS(ON)  
gfs  
GS  
DS  
=15V, I =4.0A  
D
1.5  
-
-
-
-
-
-
-
-
S
Ciss  
-
-
-
-
-
-
-
1600  
140  
42  
V
=0V, V =25V,  
DS  
GS  
Output capacitance  
Reverse transfer capacitance  
Turn on delay time  
Coss  
Crss  
pF  
nS  
f=1MHz  
t
V
=0.5BV  
, I =6.0A  
DSS  
60  
d(on)  
tr  
DD  
D
(MOSFET switching  
time are essentially  
independent of  
Rise time  
150  
300  
130  
Turn off delay time  
t
d(off)  
tf  
Fall time  
operating temperature)  
Total gate charge  
(gate-source+gate-drain)  
V
V
=10V, I =6.0A,  
D
GS  
DS  
Qg  
-
70  
-
=0.5BV  
(MOSFET  
DSS  
switching time are  
essentially independent of  
operating temperature)  
nC  
Gate source charge  
Qgs  
Qgd  
-
-
16  
27  
-
-
Gate drain (Miller) charge  
Note:  
Pulse test: Pulse width 300µS, duty cycle 2%  
1
S = ---  
R
3
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Electrical Characteristics (CONTROL part)  
(Ta=25°C unless otherwise specified)  
Parameter  
UVLO SECTION  
Symbol  
Condition  
Min.  
Typ. Max.  
Unit  
Start threshold voltage  
Stop threshold voltage  
OSCILLATOR SECTION  
V
-
14  
9
15  
10  
16  
11  
V
V
START  
V
After turn on  
STOP  
KA1M0680B  
61  
61  
90  
90  
-
67  
67  
73  
73  
KA1M0680RB  
KA1H0680B  
Initial accuracy  
F
kHz  
%
OSC  
100  
100  
±5  
110  
110  
±10  
80  
KA1H0680RFB  
25°C Ta +85°C  
KA1M0680B  
Frequency change with temperature (2)  
Maximum duty cycle  
F/T  
74  
74  
64  
64  
77  
KA1M0680RB  
KA1H0680B  
77  
80  
Dmax  
%
67  
70  
KA1H0680RFB  
67  
70  
FEEDBACK SECTION  
Feedback source current  
Shutdown Feedback voltage  
Shutdown delay current  
SOFT START SECTION  
Soft Start Voltage  
I
Ta=25°C, 0V Vfb 3V  
0.7  
6.9  
4.0  
0.9  
7.5  
5.0  
1.1  
8.1  
6.0  
mA  
V
FB  
V
-
SD  
Idelay  
Ta=25°C, 5V Vfb V  
µA  
SD  
V
V
=2V  
FB  
4.7  
0.8  
5.0  
1.0  
5.3  
1.2  
V
SS  
Soft Start Current  
I
Sync & S/S=GND  
mA  
SS  
REFERENCE SECTION  
Output voltage (1)  
Temperature Stability (1)(2)  
Vref  
Ta=25°C  
4.80  
-
5.00  
0.3  
5.20  
0.6  
V
Vref/T  
25°C Ta +85°C  
mV/°C  
CURRENT LIMIT (SELF-PROTECTION) SECTION  
Peak Current Limit  
I
Max. inductor current  
3.52  
4.00  
4.48  
A
OVER  
PROTECTION SECTION  
Thermal shutdown temperature (Tj) (1)  
Over voltage protection voltage  
TOTAL DEVICE SECTION  
Start Up current  
T
-
-
140  
23  
160  
25  
-
°C  
SD  
V
28  
V
OVP  
I
V
=14V  
CC  
0.1  
6
0.3  
12  
0.45  
18  
mA  
mA  
V
START  
Operating supply current  
(control part only)  
I
Ta=25°C  
=20mA  
OP  
V
zener voltage  
V
I
CC  
30  
32.5  
35  
CC  
Z
Note:  
1. These parameters, although guaranteed, are not 100% tested in production  
2. These parameters, although guaranteed, are tested in EDS (wafer test) process  
4
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Typical Performance Characteristics  
(These characteristic graphs are normalized at Ta=25°C)  
1.2  
1.15  
1.1  
1.2  
1.15  
1.1  
1.05  
1.05  
Ifb  
1
0.95  
0.9  
Fosc  
1
0.95  
0.9  
0.85  
0.8  
0.85  
0.8  
-25  
0
25  
50  
75 100 125 150  
- 25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 1. Operating Frequency  
Figure 2. Feedback Source Current  
1.1  
1.05  
1.2  
1.15  
1.1  
I
over  
1  
0.95  
0.9  
1.05  
I
OP  
1
0.95  
0.9  
0.85  
0.8  
0.85  
0.8  
-25  
0
25 50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 3. Operating Supply Current  
Figure 4. Peak Current Limit  
1.5  
1.15  
1.1  
1.3  
1.1  
0.9  
0.7  
0.5  
1.05  
I
V
th(H)  
ST  
a
1
0.95  
0.9  
0.85  
-25  
0
25 50 75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 5. Start up Current  
Figure 6. Start Threshold Voltage  
5
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Typical Performance Characteristics(Continued)  
(These characteristic graphs are normalized at Ta=25°C)  
1.15  
1.15  
1.1  
1.1  
1.05  
1.05  
V
th(L)  
1  
Dmax  
1
0.95  
0.9  
0.95  
0.9  
0.85  
0.85  
-25  
0
25 50 75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 7. Stop Threshold Voltage  
Figure 8. Maximum Duty Cycle  
1.2  
1.15  
1.15  
1.1  
1.05  
1
0.95  
0.9  
1.1  
1.05  
Vsd  
1
0.95  
0.9  
Vz  
0.85  
0.8  
0.85  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25  
50  
75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 9. V  
Zener Voltage  
Figure 10. Shutdown Feedback Voltage  
CC  
1.15  
1.2  
1.15  
1.1  
1.1  
1.05  
1.05  
Idelay  
1
Vovp  
1
0.95  
0.9  
0.85  
0.8  
0.95  
0.9  
0.85  
-25  
0
25 50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 11. Shutdown Delay Current  
Figure 12. Over Voltage Protection  
6
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Typical Performance Characteristics (Continued)  
(These characteristic grahps are normalized at Ta=25°C)  
1.15  
2.5  
1.1  
2
1.05  
1.5  
Vss  
1
(
)
Rdson  
0.95  
0.9  
1
0.5  
0
0.85  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 13. Soft Start Voltage  
Figure 14. Static Drain-Source on Resistance  
7
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Package Dimensions  
TO-3P-5L  
8
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Package Dimensions (Continued)  
TO-3P-5L (Forming)  
9
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Package Dimensions (Continued)  
TO-3PF-5L  
10  
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Package Dimensions (Continued)  
TO-3PF-5L(Forming)  
11  
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB  
Ordering Information  
Product Number  
KA1M0680B-TU  
Package  
TO-3P-5L  
Rating  
Fosc  
Latch/Auto  
800V, 6A  
67kHz  
Latch up mode  
KA1M0680B-YDTU  
TO-3P-5L(Forming)  
KA1M0680RB-TU  
TO-3P-5L  
800V, 6A  
800V, 6A  
800V, 6A  
67kHz  
100kHz  
100kHz  
Auto restart mode  
Latch up mode  
KA1M0680RB-YDTU  
TO-3P-5L(Forming)  
KA1H0680B-TU  
TO-3P-5L  
KA1H0680B-YDTU  
TO-3P-5L(Forming)  
KA1H0680RFB-TU  
TO-3PF-5L  
Auto restart mode  
KA1H0680RFB-YDTU  
TO-3PF-5L(Forming)  
TU : Non Forming Type  
YDTU : Forming Type  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER  
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with  
instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the  
user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
10/17/01 0.0m 001  
Stock#DSxxxxxxxx  
2001 Fairchild Semiconductor Corporation  

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