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KA3S0880RB-TU [FAIRCHILD]

Fairchild Power Switch(SPS); 飞兆功率开关（ SPS ）
KA3S0880RB-TU
型号： KA3S0880RB-TU
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Fairchild Power Switch(SPS)
飞兆功率开关（ SPS ）

稳压器 开关式稳压器或控制器 电源电路 开关式控制器 局域网
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www.fairchildsemi.com  
KA3S0880RB/KA3S0880RFB  
Fairchild Power Switch(SPS)  
Features  
Description  
• Wide operating frequency range up to 150KHz  
• Pulse by pulse over current limiting  
• Over current protection  
• Over voltage protection (Min. 23V)  
• Internal thermal shutdown function  
• Under voltage lockout  
• Internal high voltage sense FET  
• External sync terminal  
• Auto Restart Mode  
The SPS product family is specially designed for an off-line  
SMPS with minimal external components. The SPS consist of  
high voltage power SenseFET and current mode PWM Control-  
ler IC. PWM controller features integrated fixed oscillator,  
under voltage lock out, leading edge blanking, optimized gate  
turn-on/turn-off driver, thermal shut down protection, over volt-  
age protection, temperature compensated precision current  
sources for loop compensation and fault protection circuit.  
Compared to discrete MOSFET and controller or RCC switch-  
ing converter solution, a SPS can reduce total component count,  
design size, weight and at the same time increase & efficiency,  
productivity, and system reliability. It has a basic platform well  
suited for cost effective design in C-TV power supply.  
TO-3PF-5L  
TO-3P-5L  
1
1
1. DRAIN 2. GND 3. V  
4. FB 5. Sync  
CC  
Internal Block Diagram  
#3 V  
CC  
#1 DRAIN  
32V  
5V  
Vref  
Internal  
bias  
SFET  
Good  
logic  
#5 Sync  
#4 FB  
−
OSC  
+
5V  
S
R
6.4V  
Q
−
L.E.B  
0.1V  
2.5R  
2µA  
1mA  
9V  
+
1R  
+
S
#2 GND  
−
7.5V  
25V  
Q
R
+
Thermal S/D  
OVER VOLTAGE S/D  
Power on reset  
−
Rev.1.0.1  
©2001 Fairchild Semiconductor Corporation  
KA3S0880RB/KA3S0880RFB  
Absolute Maximum Ratings  
Parameter  
Maximum Drain voltage (1)  
Symbol  
Value  
800  
Unit  
V
V
D,MAX  
Drain-Gate voltage (R =1MΩ)  
V
DGR  
800  
V
GS  
Gate-source (GND) voltage  
Drain current pulsed (2)  
Single pulsed avalanche energy (3)  
Avalanche current (4)  
V
±30  
V
GS  
DM  
I
32.0  
810  
A
DC  
E
I
mJ  
A
AS  
25  
AS  
Continuous drain current (T =25°C)  
I
I
8.0  
A
C
D
D
DC  
DC  
V
Continuous drain current (T =100°C)  
5.6  
A
C
Maximum supply voltage  
Input voltage range  
V
30  
CC,MAX  
V
−0.3 to V  
190  
V
FB  
SD  
P
W
W/°C  
°C  
D
Total power dissipation  
Derating  
1.54  
Operating ambient temperature  
Storage temperature  
T
−25 to +85  
A
T
−55 to +150  
°C  
STG  
Notes:  
1. Tj=25°C to 150°C  
2. Repetitive rating: Pulse width limited by maximum junction temperature  
3. L=24mH, starting Tj=25°C  
4. L=13µH, starting Tj=25°C  
2
KA3S0880RB/KA3S0880RFB  
Electrical Characteristics (SFET part)  
(Ta=25°C unless otherwise specified)  
Parameter  
Symbol  
BV  
Condition  
Min.  
Typ. Max. Unit  
Drain-source breakdown voltage  
V
=0V, I =50µA  
800  
-
-
V
DSS  
GS  
D
V
V
=Max., Rating,  
=0V  
DS  
GS  
-
-
-
50  
µA  
Zero gate voltage drain current  
I
DSS  
V
V
=0.8Max., Rating,  
DS  
-
200  
µA  
=0V, T =125°C  
GS  
C
Static drain-source on resistance (note)  
Forward transconductance (note)  
Input capacitance  
R
V
V
=10V, I =5.0A  
D
-
1.2  
2.5  
2460  
210  
64  
1.5  
-
Ω
DS(ON)  
GS  
DS  
gfs  
=15V, I =5.0A  
D
1.5  
S
Ciss  
-
-
-
-
-
-
-
-
V
=0V, V =25V,  
GS DS  
Output capacitance  
Reverse transfer capacitance  
Turn on delay time  
Coss  
Crss  
-
pF  
nS  
f=1MHz  
-
td(on)  
tr  
V
=0.5BV  
DD  
, I =8.0A  
D
-
90  
200  
450  
150  
DSS  
(MOSFET switching  
time are essentially  
independent of  
Rise time  
95  
Turn off delay time  
td(off)  
tf  
150  
60  
Fall time  
operating temperature)  
Total gate charge  
(gate-source+gate-drain)  
V
V
=10V, I =8.0A,  
D
=0.5BV (MOSFET  
DSS  
GS  
DS  
Qg  
-
-
150  
switching time are  
essentially independent of  
operating temperature)  
nC  
Gate-source charge  
Qgs  
Qgd  
-
-
20  
70  
-
-
Gate-drain (Miller) charge  
Note:  
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%  
1
S = ---  
R
3
KA3S0880RB/KA3S0880RFB  
Electrical Characteristics (Control part)  
(Ta=25°C unless otherwise specified)  
Parameter  
UVLO SECTION  
Symbol  
Condition  
Min.  
Typ. Max.  
Unit  
Start threshold voltage  
Stop threshold voltage  
OSCILLATOR SECTION  
Initial accuracy  
V
-
14  
9
15  
10  
16  
11  
V
V
START  
V
After turn on  
STOP  
F
Ta=25°C  
18  
-
20  
±5  
95  
22  
±10  
98  
kHz  
%
OSC  
Frequency change with temperature (2)  
∆F/∆T  
−25°C≤Ta≤+85°C  
Maximum duty cycle  
Dmax  
-
92  
%
FEEDBACK SECTION  
Feedback source current  
Shutdown Feedback voltage  
Shutdown delay current  
SYNC. & SOFT START SECTION  
Soft start voltage  
I
Ta=25°C, Vfb=GND  
0.7  
6.9  
1.4  
0.9  
7.5  
1.8  
1.1  
8.1  
2.2  
mA  
V
FB  
V
-
SD  
Idelay  
Ta=25°C, 5V≤Vfb≤V  
µA  
SD  
V
V =2V  
FB  
4.7  
0.8  
6.0  
5.0  
1.0  
6.4  
5.3  
1.2  
6.8  
V
mA  
V
SS  
Soft start current  
I
Sync & S/S=GND  
Vfb=5V  
SS  
Sync threshold voltage (3)  
REFERENCE SECTION  
Output voltage (1)  
V
SYTH  
Vref  
Ta=25°C  
4.80  
-
5.00  
0.3  
5.20  
0.6  
V
Temperature Stability (1)(2)  
Vref/∆T  
−25°C≤Ta≤+85°C  
mV/°C  
CURRENT LIMIT (SELF-PROTECTION) SECTION  
Peak Current Limit  
I
Max. inductor current  
4.40  
5.00  
5.60  
A
OVER  
PROTECTION SECTION  
Thermal shutdown temperature (Tj) (1)  
Over voltage protection voltage  
TOTAL DEVICE SECTION  
Start Up current  
T
-
-
140  
23  
160  
25  
-
°C  
SD  
V
28  
V
OVP  
I
V
=14V  
0.1  
6
0.3  
12  
0.55  
18  
mA  
mA  
V
START  
CC  
Operating supply current  
(control part only)  
I
Ta=25°C  
OP  
V
zener voltage  
V
I
=20mA  
CC  
30  
32.5  
35  
CC  
Z
Notes:  
1. These parameters, although guaranteed, are not 100% tested in production  
2. These parameters, although guaranteed, are tested in EDS (wafer test) process  
3. The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.  
4
KA3S0880RB/KA3S0880RFB  
Typical Performance Characteristics  
(These characteristic graphs are normalized at Ta=25°C)  
1.2  
1.15  
1.1  
1.2  
1.15  
1.1  
1.05  
1.05  
Ifb  
1
0.95  
0.9  
Fosc  
1
0.95  
0.9  
0.85  
0.8  
0.85  
0.8  
-25  
0
25  
50  
75 100 125 150  
- 25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 1. Operating Frequency  
Figure 2. Feedback Source Current  
1.1  
1.2  
1.15  
1.1  
1.05  
1  
over  
I
1.05  
Iop  
0.95  
0.9  
1
0.95  
0.9  
0.85  
0.8  
0.85  
0.8  
-25  
0
25 50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 3. Operating Supply Current  
Figure 4. Peak Current Limit  
1.5  
1.15  
1.1  
1.3  
1.1  
0.9  
0.7  
0.5  
1.05  
Istart  
Vstart  
1
0.95  
0.9  
0.85  
-25  
0
25 50 75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 5. Start up Current  
Figure 6. Start Threshold Voltage  
5
KA3S0880RB/KA3S0880RFB  
Typical Performance Characteristics (Continued)  
(These characteristic graphs are normalized at Ta=25°C)  
1.15  
1.1  
1.15  
1.1  
1.05  
1.05  
V
th(H)  
1  
Dmax 1  
0.95  
0.95  
0.9  
0.9  
0.85  
0.85  
-25  
0
25 50 75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 7. Stop Threshold Voltage  
Figure 8. Maximum Duty Cycle  
1.2  
1.15  
1.15  
1.1  
1.05  
1
0.95  
0.9  
1.1  
1.05  
Vsd  
1
0.95  
0.9  
Vz  
0.85  
0.8  
0.85  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25  
50  
75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 9. V  
Zener Voltage  
Figure 10. Shutdown Feedback Voltage  
CC  
1.15  
1.2  
1.15  
1.1  
1.1  
1.05  
1.05  
Idelay  
1
Vovp  
1
0.95  
0.9  
0.85  
0.8  
0.95  
0.9  
0.85  
-25  
0
25 50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 11. Shutdown Delay Current  
Figure 12. Over Voltage Protection  
6
KA3S0880RB/KA3S0880RFB  
Typical Performance Characteristics (Continued)  
(These characteristic grahps are normalized at Ta=25°C)  
1.15  
1.1  
2.5  
2
1.05  
1.5  
Vss  
1
0.95  
0.9  
(
)
Rdson  
1
0.5  
0
0.85  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Temperature [°C]  
Temperature [°C]  
Figure 13. Soft Start Voltage  
Figure 14. Static Drain-Source on Resistance  
7
KA3S0880RB/KA3S0880RFB  
Package Dimensions  
TO-3P-5L  
8
KA3S0880RB/KA3S0880RFB  
Package Dimensions (Continued)  
TO-3P-5L (Forming)  
9
KA3S0880RB/KA3S0880RFB  
Package Dimensions  
TO-3PF-5L  
10  
KA3S0880RB/KA3S0880RFB  
Package Dimensions(Continued)  
TO-3PF-5L (Forming)  
11  
KA3S0880RB/KA3S0880RFB  
Ordering Information  
Product Number  
Package  
Topr (°C)  
KA3S0880RB-TU  
TO-3P-5L  
−25°C to +85°C  
KA3S0880RB-YDTU  
TO-3P-5L(Forming)  
KA3S0880RFB-TU  
TO-3PF-5L  
−25°C to +85°C  
KA3S0880RFB-YDTU  
TO-3PF-5L(Forming)  
TU : Non Forming Type  
YDTU : Forming Type  
12  
KA3S0880RB/KA3S0880RFB  
13  
KA3S0880RB/KA3S0880RFB  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER  
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with  
instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the  
user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
2/5/01 0.0m 001  
Stock#DSxxxxxxxx  
2001 Fairchild Semiconductor Corporation  

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