KA5M0165RN [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关（ FPS ）
| 型号： | KA5M0165RN |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Fairchild Power Switch(FPS) |
| 文件： | 总12页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA5x0165Rxx-SERIES
KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN,
KA5H0165RVN
Fairchild Power Switch(FPS)
Features
Description
• Precision Fixed Operating Frequency (100/67/50kHz )
• Low Start-up Current (Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 25V)
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry
- except KA5H0165RVN
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
compared to discrete MOSFET and controller or R
CC
switching converter solution, The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reliability. It is well suited for cost effective design of flyback
converters.
TO-220F-4L
8-DIP
1
1
1.6.7.8. Drain
2. GND
3. Vcc
4. FB
5. NC
1. GND
2. Drain
3. Vcc
4. FB
Internal Block Diagram
V
CC
DRAIN
32V
5V
Vref
Internal
bias
SFET
Good
logic
OSC
S
R
Q
−
FB
L.E.B
2.5R
5µA
1mA
9V
+
1R
0.1V
+
S
R
GND
−
7.5V
27V
Q
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
Rev.1.0.5
©2003 Fairchild Semiconductor Corporation
KA5X0165RXX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
650
Unit
V
Drain-Gate Voltage (R =1MΩ)
V
DGR
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
V
±30
V
GS
DM
I
4.0
A
DC
Continuous Drain Current (T =25°C)
I
I
1.0
A
DC
A
DC
C
D
Continuous Drain Current (T =100°C)
0.7
C
D
Single Pulsed Avalanche Energy (2)
E
95
mJ
V
AS
Maximum Supply Voltage
V
30
CC,MAX
Analog Input Voltage Range
V
-0.3 to V
40
V
FB
SD
P
W
D
Total Power Dissipation
Derating
0.32
+160
W/°C
°C
°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
J
T
-25 to +85
A
T
STG
-55 to +150
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=24mH, starting Tj=25°C
2
KA5X0165RXX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
rain-Source Breakdown Voltage
Symbol
BV
Condition
=0V, I =50µA
Min. Typ. Max. Unit
D
V
V
650
-
-
-
-
V
DSS
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Z
ero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
8
-
10
-
Ω
DS(ON)
GS
DS
gfs
=50V, I =0.5A
D
0.5
S
Ciss
-
-
-
-
-
-
-
250
25
10
12
4
-
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
-
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn on Delay Time
-
td(on)
tr
-
V
=0.5B V
, I =1.0A
DSS
DD
D
Rise Time
-
(MOSFET switching time is
essentially independent of
operating temperature)
Turn Off Delay Time
td(off)
tf
30
10
-
Fall Time
-
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
-
-
21
=0.5B V
(MOSFET
DSS
switching time is essentially
independent of operating
temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
3
9
-
-
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
2.
1
R
S = ---
3
KA5X0165RXX-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max.
Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Accuracy
V
V
V
=GND
14
15
16
V
V
START
FB
FB
V
=GND
8.2
8.8
9.4
STOP
F
KA5H0165Rxx
KA5M0165Rx
KA5L0165Rx
90
61
45
-
100
67
110
73
kHz
kHz
kHz
%
OSC
OSC
OSC
Initial Accuracy
F
Initial Accuracy
Frequency Change With Temperature (2)
F
50
55
∆F/∆T
-25°C ≤ Ta ≤ +85°C
KA5H0165Rxx
±5
67
±10
72
Maximum Duty Cycle
Dmax
62
%
KA5M0165Rx
KA5L0165Rx
Maximum Duty Cycle
Dmax
72
77
82
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
REFERENCE SECTION
Output Voltage (1)
I
Ta=25°C, 0V ≤ Vfb ≤ 3V
Vfb ≥ 6.5V
0.7
6.9
4
0.9
7.5
5
1.1
8.1
6
mA
V
FB
V
SD
Idelay
Ta=25°C, 3V ≤ Vfb ≤ V
µA
SD
Vref
Ta=25°C
4.80
-
5.00
0.3
5.20
0.6
V
Temperature Stability (1)(2)
Vref/∆T
-25°C ≤ Ta ≤ +85°C
mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
I
OVER
Max. inductor current
0.53
0.6
0.67
A
PROTECTION SECTION
Thermal Shutdown Temperature (1)
Over Voltage Protection
T
-
140
25
160
27
-
°C
SD
V
except KA5H0165RVN
29
V
OVP
TOTAL STANDBY CURRENT SECTION
Start-up Current
I
V
V
=14V
-
-
100
7
170
12
µA
START
CC
CC
Operating Supply Current
(Control Part Only)
I
≤ 28
mA
OP
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA5X0165RXX-SERIES
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Ifb
1
0.95
0.9
Fosc
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25
50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 2. Feedback Source Current
Figure 1. Operating Frequency
1.1
1.2
1.15
1.1
1.05
1
I
over
1.05
Iop
0.95
0.9
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 4. Peak Current Limit
Figure 3. Operating Supply Current
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
Istart
Vs tart
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 6. Start Threshold Voltage
Figure 5. Start up Current
5
KA5X0165RXX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
1.15
1.1
1.1
1.05
1.05
Vs top
1
Dmax
1
0.95
0.9
0.95
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 8. Maximum Duty Cycle
Figure 7. Stop Threshold Voltage
1.2
1.15
1.15
1.1
1.05
1
0.95
0.9
1.1
1.05
Vz
Vs d
1
0.95
0.9
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 10. Shutdown Feedback Voltage
Figure 9. V Zener Voltage
CC
1.15
1.2
1.15
1.1
1.05
1.1
1.05
Idelay
1
Vovp
1
0.95
0.9
0.95
0.9
0.85
0.8
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 12. Over Voltage Protection
Figure 11. Shutdown Delay Current
6
KA5X0165RXX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
2.5
2
1.1
1.05
1.5
Vs s
1
(
Rdson
)
1
0.95
0.9
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 14. Static Drain-Source on Resistance
Figure13. Soft Start Voltage
7
KA5X0165RXX-SERIES
Package Dimensions
TO-220F-4L
8
KA5X0165RXX-SERIES
Package Dimensions (Continued)
TO-220F-4L(Forming)
9
KA5X0165RXX-SERIES
Package Dimensions (Continued)
8-DIP
10
KA5X0165RXX-SERIES
Ordering Information
Product Number
KA5H0165RTU
Package
Marking Code
BV
F
R
DS(on)
DSS
OSC
TO-220F-4L
5H0165R
650V
650V
650V
100kHz
67kHz
50kHz
8Ω
KA5H0165RYDTU
TO-220F-4L(Forming)
KA5M0165RTU
TO-220F-4L
5M0165R
5L0165R
8Ω
8Ω
KA5M0165RYDTU
TO-220F-4L(Forming)
KA5L0165RTU
TO-220F-4L
KA5L0165RYDTU
TO-220F-4L(Forming)
KA5H0165RN
KA5M0165RN
KA5L0165RN
8-DIP
8-DIP
8-DIP
5H0165R
5M0165R
5L0165R
650V
650V
650V
100kHz
67kHz
50kHz
8Ω
8Ω
8Ω
Product Number
Package
Marking Code
BV
F
OSC
R
DS(on)
DSS
KA5H0165RVN
8-DIP
5H0165RV
650V
100kHz
8Ω
TU : Non Forming Type
YDTU : Forming Type
11
KA5X0165RXX-SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
8/25/03 0.0m 001
Stock#DSxxxxxxxx
2003 Fairchild Semiconductor Corporation
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